Abstract
Power gain linearity was studied using gain mapping method for enhance/depletion (E/D) dual-gate high electron mobility transistors (HEMTs). This method contains next steps; S-parameter and drain current were measured for all drain and gate voltage where interested. Maximum stable gain (MSG), maximum available gain (MAG) and H21 parameters were then calculated for frequency which is interested. These parameters were plotted on drain-current and drain voltage plane. By using this method into dual-gate HEMTs, it was found that threshold voltage of the second gates are essential for gain linearity and have its optimum value.
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