Uniform Junctions Research Articles

Laser shock-enabled optical–thermal–mechanical coupled welding method for silver nanowires

Silver nanowires (AgNWs) are recognized as highly promising materials for flexible and transparent electrode applications. However, existing material-processing methods fail to achieve uniform and reliable AgNWs junctions. In this study, we propose a new method using the laser shock effect combined with the laser heating effect, for creating AgNW junctions within thin films. We explored the welding mechanism of AgNWs through optic-thermal welding, laser shock-enabled mechanical welding, and laser-shock-enabled optical-thermal-mechanical (LS-OTM) experiments, as well as numerical simulations, and the results demonstrate that the innovative mechanism of the LS-OTM process lies in its utilization of laser shock to adjust the gap between the nanowire junctions, which in turn achieves a fine control of the thermal effect of the heating laser localised surface plasmon resonance, and the atomic diffusion in the solid state at intermediate temperature under the action of the impact force is the mechanism of the formation of high-quality junctions. We prepared flexible transparent conductive films and studied their transmittance, conductivity, and thermal properties, the results show that the flexible transparent conductive films prepared by LS-OTM welding method have excellent transmittance, conductivity, and thermal properties, this verifies the feasibility and effectiveness of this processing strategy. The LS-OTM method is a viable solution for manufacturing transparent, conductive films from AgNWs for emerging applications such as flexible heated films, flexible displays, and wearable medical devices.

Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction

Band engineering through the integration of van der Waals heterostructures composed of 2D materials offers a promising approach to achieving high-performance optoelectronic devices. This strategy allows for the fabrication of ultrathin and uniform PN junctions with well-defined band edges, enabling efficient charge transfer and separation. In this study, we have developed a self-powered and highly sensitive photodetector using a van der Waals heterostructure composed of WSe2 and Te. The Te layer was employed as the channel material for the phototransistor, while the out-of-plane Te/WSe2 PN junction served as the charge transfer layer. The vertical built-in electric field present in the PN junction facilitated the separation of photogenerated carriers. The proposed phototransistor demonstrated exceptional self-powered performance characteristics, including a photoresponsivity of 33.08 mA/W, a specific detectivity of 1.57 × 106 Jones, and a fast response time of 2 μs. These results highlight the effectiveness of the van der Waals heterostructure design in achieving high sensitivity and efficient carrier separation in photodetection applications.

Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates

Tantalum and aluminum on sapphire are widely used platforms for qubits of long coherent time. As quantum chips scale up, the number of Josephson junctions on sapphire increases. Thus, both the uniformity and stability of the junctions are crucial to quantum devices, such as scalable superconducting quantum computer circuit, and quantum-limited amplifiers. By optimizing the fabrication process, especially, the conductive layer during the electron beam lithography process, Al/AlOx/Al junctions of sizes ranging from 0.0169 to 0.04 µm2 on sapphire substrates were prepared. The relative standard deviation of room temperature resistances (RN) – {upsigma }_{{R_{{text{N}}} }} /leftlangle {R_{{text{N}}} } rightrangle of these junctions is better than 1.7% on 15 mm × 15 mm chips, and better than 2.66% on 2 inch wafers, which is the highest uniformity on sapphire substrates has been reported. The junctions are robust and stable in resistances as temperature changes. The resistances increase by the ratio of 9.73% relative to RN as the temperature ramp down to 4 K, and restore their initial values in the reverse process as the temperature ramps back to room temperature. After being stored in a nitrogen cabinet for 100 days, the resistance of the junctions changed by1.16% on average. The demonstration of uniform and stable Josephson junctions in large area paves the way for the fabrication of superconducting chip of hundreds of qubits on sapphire substrates.

Design of Z-scheme polymeric carbon nitride/Bi2WO6 heterojunctions for efficient visible-light-driven antibiotic degradation

The use of heterojunctions with Z-scheme photocatalysts holds great promise for enhancing the photocatalytic degradation efficiency of antibiotics. In this study, we report the construction of a novel heterostructure by in-situ growth of the ultrathin polymeric carbon nitride (PCN) on the electrospun Bi2WO6 nanofibers for improved photocatalytic tetracycline (TC) degradation under visible light. Our gas–solid reaction strategy enables the formation of uniform and intimate junctions between the PCN nanosheets and the Bi2WO6 nanofibers, resulting in a well-contacted interface that remarkably accelerates the separation and transfer of the photogenerated charge carriers. The optimized PCN/Bi2WO6 photocatalyst exhibits a significant TC degradation rate of 89.5 % under visible light, which is 1.4-fold and 2.0-fold of the pure PCN and Bi2WO6 photocatalysts, respectively. Our innovative design philosophy opens up a new horizon for the development of efficient Z-scheme heterostructured photocatalysts for antibiotic degradation.

Building large-scale unimolecular scaffolding for electronic devices

The fabrication of a future generation of (opto)electronic devices based on molecular components and materials will require careful chemical design, coupled with assembly methods that permit precise spatial orientation and arrangement of the functional molecules within device structures. Although unimolecular electronics are already a laboratory reality, the variation in the arrangement of the molecule within a molecular junction from measurement to measurement is considerable. Consequently, controlling the precise geometry at the molecule–metal contacts is a long-standing and largely unresolved challenge. Here, a strategy to fabricate uniform unimolecular junctions distributed in a regular pattern is reported. A monolayer of zinc metalloporphyrins, peripherally functionalised by bulky dendrons, is used to provide a well-defined array of molecular binding sites with precise spatial distribution. The dendrons are then photochemically cross-linked to form a robust base-layer. Parallel, uniformly-spaced unimolecular structures are subsequently assembled on these binding sites through a layer-by-layer (LbL) strategy. This LbL strategy proceeds through coordination of an α,ω-amino functionalised oligo(phenylene)ethynylene (OPE) molecule to the zinc ions of the metalloporphyrin template base-layer. The structure is then extended through alternating self-assembled layers of (cross-linked) zinc porphyrin and OPE. The coordination interaction between the zinc(II) sites and the bifunctional OPE wire ensures a high degree of registry between the layers and good electrical contact through the extended arrays and offer fine control over the chemical composition.

Directed ratchet transport of cold atoms and fluxons driven by biharmonic fields: A unified view.

This paper discusses two retrodictions of the theory of ratchet universality which explain previous experimental results concerning directed ratchet transport of cold atoms in dissipative optical lattices in one case and of fluxons in uniform annular Josephson junctions in the other, both driven by biharmonic fields. It has to be emphasized that these retrodictions are in sharp contrast with the current standard explanation of such experimental results, and they offer optimal control of the ratchetlike motion of such entities. New experimental proposals with cold atoms and fluxons are discussed, providing additional tests for novel predictions from ratchet universality.

Suspended 1D Metal Oxide Nanowire Junction Networks for Use As Highly Sensitive Gas Sensors

Introduction Over the last few decades, research has been conducted to build sensitive, reliable and high-performance gas monitoring systems that meet the demands of industrial sites. In particular, 1D metal oxide (MOx) nanomaterials have been actively studied as a gas sensing material because of its excellent sensing performance, low cost, and suitability for a micro/nano device [1]. Besides, the MOx 1D nanostructures are relatively easy to synthesize, easy to control morphology and have various options including surface functionalization to make even further enhancement of the sensing performance [2]. In particular, when the MOx 1D nanostructures linked together and form a junction structure, an additional current path is generated through the formed junction and this forms additional potential barriers. Thus, an additional gas sensing mechanism can be utilized to further improve sensing performance as shown in Figure 1 [3]. In general, however, the fabrication process of MOx nanostructure networks including dense junctions requires complex and precise techniques. In addition, the nanostructure networks are positioned on the substrates. Therefore, gas access to the junctions and mass transfer to the sensing sites are limited. In this study, we report a novel gas sensor architecture including a suspended carbon mesh integrated with ZnO nanowires networks. The nanowires are grown on single carbon wires of the mesh and meet at the void regions of mesh structures. Thus, dese nanowire junctions can be formed in a suspended form (Figure 2). Owing to the suspended architecture, gas access to the sensing sites is effective and the sensing signal is free from the effect of the substrate [4]. The suspended carbon nanomesh was fabricated using the carbon-MEMS process consisting of simple photolithography and pyrolysis processes. The ZnO nanowire networks were precisely patterned at the suspended mesh using the hydrothermal method. The length of the nanowires was adjusted for good junction formation and the advantage of the suspended junctions was evaluated. Method Suspended carbon nanomesh was fabricated by photolithography and pyrolysis (Vacuum, 700°C) processes. Via two successive exposure steps in photolithography, suspended polymer mesh was defined without complex lithography techniques. After the pyrolysis process, microscale polymer mesh was converted into nano-sized carbon mesh because of the large volume reduction (up to 90%) in pyrolysis. After a thin ZnO seed layer was selectively coated on the suspended carbon mesh, ZnO nanowires were grown on the patterend seed layer by a hydrothermal process (Zn(NO3)2 25mM, HMTA 25mM ). The pristine ZnO nanostructures were annealed using RTA (N2 atmosphere, 300°C) for better adhesion and connection. Results and Conclusions Figure 2 shows the SEM images of the fabricated suspended carbon nanomesh (width ~140μm, thickness ~400nm, line spacing ~6μm) and ZnO nanowire networks (diameter ~100 nm, length ~3.5 μm). ZnO nanowires were well grown to form uniform and dense junctions. To characterize the effect of the nanowire junctions, NO2 gas sensing responses were compared between a nanomesh-based gas sensor and a single suspended carbon wire-based sensor. As shown in Figure 3. the suspend mesh-based sensor exhibited higher response and wider linear range due to the effect of junctions. This novel sensor architecture can be widely utilized because all the fabrication processes of the presented sensor were carried out at a wafer-level making it cost-effective and various MOx nanowires can be simple integrated with a bunch of junctions.

Hybrid Approach to Fabricate Uniform and Active Molecular Junctions.

Molecules can serve as ultimate building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform and active molecular junctions. A template-stripping technique is developed to form electrodes with sub-nanometer smooth surfaces. Combined with dielectrophoretic trapping of colloidal nanorods, uniform sub-5 nm junctions are achieved. Uniquely, in our design, the top contact is mechanically free to move under an applied stimulus. Using this, we investigate the electromechanical tuning of the junction and its tunneling conduction. Here, the molecules help control sub-nanometer mechanical modulation, which is conventionally challenging due to instabilities caused by surface adhesive forces. Our versatile approach provides a platform to develop and study active molecular junctions for emerging applications in electronics, plasmonics, and electromechanical devices.

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

Suspended 1D Metal Oxide Nanowire Junction Networks for Use As Highly Sensitive Gas Sensors

Introduction Over the last few decades, research has been conducted to build sensitive, reliable and high-performance gas monitoring systems that meet the demands of industrial sites. In particular, 1D metal oxide (MOx) nanomaterials have been actively studied as a gas sensing material because of its excellent sensing performance, low cost, and suitability for a micro/nano device [1]. Besides, the MOx 1D nanostructures are relatively easy to synthesize, easy to control morphology and have various options including surface functionalization to make even further enhancement of the sensing performance [2]. In particular, when the MOx 1D nanostructures linked together and form a junction structure, an additional current path is generated through the formed junction and this forms additional potential barriers. Thus, an additional gas sensing mechanism can be utilized to further improve sensing performance as shown in Figure 1 [3]. In general, however, the fabrication process of MOx nanostructure networks including dense junctions requires complex and precise techniques. In addition, the nanostructure networks are positioned on the substrates. Therefore, gas access to the junctions and mass transfer to the sensing sites are limited. In this study, we report a novel gas sensor architecture including a suspended carbon mesh integrated with ZnO nanowires networks. The nanowires are grown on single carbon wires of the mesh and meet at the void regions of mesh structures. Thus, dese nanowire junctions can be formed in a suspended form (Figure 2). Owing to the suspended architecture, gas access to the sensing sites is effective and the sensing signal is free from the effect of the substrate [4]. The suspended carbon nanomesh was fabricated using the carbon-MEMS process consisting of simple photolithography and pyrolysis processes. The ZnO nanowire networks were precisely patterned at the suspended mesh using the hydrothermal method. The length of the nanowires was adjusted for good junction formation and the advantage of the suspended junctions was evaluated. Method Suspended carbon nanomesh was fabricated by photolithography and pyrolysis (Vacuum, 700°C) processes. Via two successive exposure steps in photolithography, suspended polymer mesh was defined without complex lithography techniques. After the pyrolysis process, microscale polymer mesh was converted into nano-sized carbon mesh because of the large volume reduction (up to 90%) in pyrolysis. After a thin ZnO seed layer was selectively coated on the suspended carbon mesh, ZnO nanowires were grown on the patterend seed layer by a hydrothermal process (Zn(NO3)2 25mM, HMTA 25mM ). The pristine ZnO nanostructures were annealed using RTA (N2 atmosphere, 300°C) for better adhesion and connection. Results and Conclusions Figure 2 shows the SEM images of the fabricated suspended carbon nanomesh (width ~140μm, thickness ~400nm, line spacing ~6μm) and ZnO nanowire networks (diameter ~100 nm, length ~3.5 μm). ZnO nanowires were well grown to form uniform and dense junctions. To characterize the effect of the nanowire junctions, NO2 gas sensing responses were compared between a nanomesh-based gas sensor and a single suspended carbon wire-based sensor. As shown in Figure 3. the suspend mesh-based sensor exhibited higher response and wider linear range due to the effect of junctions. This novel sensor architecture can be widely utilized because all the fabrication processes of the presented sensor were carried out at a wafer-level making it cost-effective and various MOx nanowires can be simple integrated with a bunch of junctions.

Construction of uniform buried pn junctions on pyramid Si photocathodes using a facile and safe spin-on method for photoelectrochemical water splitting

Uniform buried pn junctions on pyramid Si photocathodes are constructed by spin coating using low viscosity dopants, which enhances the separation and migration of photogenerated carriers.

Area Efficient High Through-put Dual Heavy Metal Multi-Level Cell SOT-MRAM

This paper proposes a novel multi-level cell spin-orbit torque magnetic random-access memory (MLC SOT-MRAM) cell structure and validates its functionality and performance through simulation. The proposed memory cell comprises two uniform magnetic tunnel junctions (MTJs) that can be programmed separately by the energy efficient SOT technology through two different heavy metal electrodes. This permit employing both single and dual port architectures. The uniform cross-sectional area of the in-series MTJs stack simplifies the fabrication process. In addition, the cell structure requires only four terminals to successfully read and write the two bits. This allows accessing the two bits with only three access transistors, which achieves 25% smaller 1-bit effective area compared to the conventional single level cell (SLC) SOT-MRAM that requires four transistors. Simulation results based on an approximated dynamic model shows it offers nearly similar write energy consumption compared to the conventional SOT-MRAM.

Engineering tunnel junctions on ballistic semiconductor nanowires

Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III–V nanowires and enables characterization of nanowire local density of states.

Layered Heterostructures of Ultrathin Polymeric Carbon Nitride and ZnIn2 S4 Nanosheets for Photocatalytic CO2 Reduction.

The rational construction of heterostructures by using layered semiconductors with two-dimensional (2D) nanosheet configurations is promising to improve the efficiency of CO2 photoreduction. Herein, the fabrication of layered heterojunction photocatalysts (PCN/ZnIn2 S4 ) by in situ growth of 2D ZnIn2 S4 nanosheets on the surfaces of ultrathin polymeric carbon nitride (PCN) layers is presented for greatly enhanced CO2 conversion with visible light. The solution-processed self-assembly strategy renders the building of uniform and intimate junctions between PCN layers and ZnIn2 S4 subunits, which remarkably accelerates the separation and transfer of photogenerated charge carriers. In addition, the layered composites can also promote CO2 adsorption and strengthen the visible-light absorption. Consequently, the optimized PCN/ZnIn2 S4 sheet-shaped composite shows reinforced photoactivity for deoxygenative CO2 conversion, affording a high CO-production rate of 44.6 μmol h-1 , which is 223 times higher than that of the pristine PCN nanosheets. Moreover, the heterojunction photocatalyst also exhibits high stability during repeated runs for five cycles.

Analysis of Hyperabrupt and Uniform Junctions in GaAs for the Application of Varactor Diode

In this study, we present a GaAs varactor diode with a hyperabrupt junction for the enhancement of breakdown voltage and capacitance variation in a reverse bias state. The hyperabrupt doping profile in the n-type active layer is prepared in a controlled nonlinear manner, with the density of the dopants increasing towards the Schottky junction. The hyperabrupt GaAs varactor diode is fabricated and characterized for breakdown voltage and capacitance over the electric field, induced by an applied reverse bias voltage. A reduced value of the electric field is observed owing to the nonlinear behavior of the electric field at the hyperabrupt junction, although the device has a larger doping density at the Schottky junction. Furthermore, the capacitance ratio of the hyperabrupt junction diode is also improved. Variation in the device capacitance is affected by variation in the depletion region across the junction. Technology CAD is used to understand the experimental phenomena by considering the magnitude of charge density as a function of the doping profile. A higher breakdown voltage and greater capacitance modulation are shown in the hyperabrupt junction diode compared to the uniform junction diode.

Nano Josephson superconducting tunnel junctions in YBa2Cu3O(7-δ) directly patterned with a focused helium ion beam.

Since the discovery of the high-transition-temperature superconductors (HTSs), researchers have explored many methods to fabricate superconducting tunnel junctions from these materials for basic science purposes and applications. HTS circuits operating at liquid-nitrogen temperatures (∼77 K) would significantly reduce power requirements in comparison with those fabricated from conventional superconductors. The difficulty is that the superconducting coherence length is very short and anisotropic in these materials, typically ∼2 nm in the a-b plane and ∼0.2 nm along the c axis. The electrical properties of Josephson junctions are therefore sensitive to chemical variations and structural defects on atomic length scales. To make multiple uniform HTS junctions, control at the atomic level is required. In this Letter we demonstrate all-HTS Josephson superconducting tunnel junctions created by using a 500-pm-diameter focused beam of helium ions to directly write tunnel barriers into YBa2Cu3O(7-δ) (YBCO) thin films. We demonstrate the ability to control the barrier properties continuously from conducting to insulating by varying the irradiation dose. This technique could provide a reliable and reproducible pathway for scaling up quantum-mechanical circuits operating at liquid-nitrogen temperatures, as well as an avenue to conduct novel planar superconducting tunnelling studies for basic science.

Tricrystalline TiO2 with enhanced photocatalytic activity and durability for removing volatile organic compounds from indoor air

It is important to develop efficient and economic techniques for removing volatile organic compounds (VOCs) in indoor air. Heterogeneous TiO2-based semiconductors are a promising technology for achieving this goal. Anatase/brookite/rutile tricrystalline TiO2 with mesoporous structure was synthesized by a low-temperature hydrothermal route in the presence of HNO3. The obtained samples were characterized by X-ray diffraction and N2 adsorption–desorption isotherm. The photocatalytic activity was evaluated by photocatalytic decomposition of toluene in air under UV light illumination. The results show that tricrystalline TiO2 exhibited higher photocatalytic activity and durability toward gaseous toluene than bicrystalline TiO2, due to the synergistic effects of high surface area, uniform mesoporous structure and junctions among mixed phases. The tricrystalline TiO2 prepared at RHNO3=0.8, containing 80.7% anatase, 15.6% brookite and 3.7% rutile, exhibited the highest photocatalytic activity, about 3.85-fold higher than that of P25. The high activity did not significantly degrade even after five reuse cycles. In conclusion, it is expected that our study regarding gas-phase degradation of toluene over tricrystalline TiO2 will enrich the chemistry of the TiO2-based materials as photocatalysts for environmental remediation and stimulate further research interest on this intriguing topic.

Controlled Doping Methods for Radial p/n Junctions in Silicon

P/n and n/p junctions with depths of 200 nm to several micrometers have been created in flat silicon substrates as well as on 3D microstructures by means of a variety of methods, including solid source dotation (SSD), low‐pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition, and plasma‐enhanced chemical vapor deposition. Radial junctions in Si micropillars are inspected by optical and scanning electron micro­scopies, using a CrO3‐based staining solution, which enables visualization of the junction depth. When applying identical‐doping parameters to flat substrates, ball grooving, followed by staining and optical microscopy, yields similar junction depth values as high‐resolution scanning electron microscopy imaging on stained cross‐sections and secondary ion mass spectrometry depth profilometry. For the investigated 3D microstructures, doping based on SSD and LPCVD give uniform and conformal junctions. Junctions made with SSD‐boron doping and CVD‐phosphorus doping could be accurately predicted with a model based on Fick's diffusion law. 3D‐microstructured silicon pillar arrays show an increased efficiency for sunlight capturing. The functionality of micropillar arrays with radial junctions is evidenced by improved short‐circuit current densities and photovoltaic efficiencies compared with flat surfaces, for both n‐ and p‐type wafers (average pillar arrays efficiencies of 9.4% and 11%, respectively, compared with 8.3% and 6.4% for the flat samples).

Enhancement of retinal pigment epithelial culture characteristics and subretinal space tolerance of scaffolds with 200 nm fiber topography

Tissue engineered retinal pigment epithelial (RPE) transplantation is a promising cell-based therapy for age-related macular degeneration. The aim of this work is to develop a supportive scaffold with a favorable topography to aid functional RPE monolayer maintenance while being tolerated underneath the retina. To this end, films and electrospun substrates with fiber diameters ranging from 200 to 1000 nm were made of polyethylene terephthalate or poly(l-lactide-co-ε-caprolactone), and then tested using human fetal RPE cells in vitro and transplanted subretinally in rabbits. The results indicated that RPE on both 200 nm fiber variants showed the highest cell densities, adherent monolayers achieved deeper pigmentation, and more uniform hexagonal tight junctions. Facile subretinal implantation of flat 200 nm fiber membranes was achieved by electrospinning them onto a porous rigid-elastic carrier. Spectral-domain optical coherence tomography showed a reattached, slightly thinned retina overlying the implants over 2 weeks observation. Histology demonstrated native RPE variably migrated onto the nanofibers, and a reactive gliosis with some photoreceptor degeneration. In conclusion, scaffolds with 200 nm fiber topography enhanced RPE culture, showed subretinal biocompatibility, and should thus be considered for future cell-based therapies in blinding retinal diseases.

Ultrafast metal-insulator varistors based on tunable Al2O3 tunnel junctions

Ultrafast metal-insulator varistors have been fabricated using atomic layer deposition. A high-density matrix of micron-sized spherical Ni particles conformally coated with ∼7.5–22nm Al2O3 films exhibited transient response times (∼0.3ns), capacitances (∼45pF), leakage currents (∼33pA), and nonlinearities (α∼380) which were all markedly improved over conventional metal oxide varistors. These characteristics result from the Fowler–Nordheim tunneling of electrons through uniform Al2O3 tunnel junctions separating adjacent particles within the matrix.