Unidirectional Spin Hall Magnetoresistance Research Articles

Origins of the Unidirectional Spin Hall Magnetoresistance in Metallic Bilayers.

Recent studies evidenced the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba-Edelstein effects. Here, we investigate the unidirectional magnetoresistance (UMR) caused by the current-induced spin accumulation in Co/Pt and CoCr/Pt bilayers. We identify three competing mechanisms underpinning the resistance asymmetry, namely, interface and bulk spin-dependent electron scattering and electron-magnon scattering. Our measurements provide a consistent description of the current, magnetic field, and temperature dependence of the UMR and show that both positive and negative UMR can be obtained by tuning the interface and bulk spin-dependent scattering.

Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation

We perform electrical measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the current dependence of USMR closely follows the dipolar magnon density and that both dependences exhibit the same scaling over a large temperature range of 80–400 K. These findings demonstrate a close relationship between spin current-driven magnon generation and USMR and indicate that the latter is likely dominated by the dipolar magnons.

Unidirectional spin-Hall and Rashba\u2212Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures

The large spin−orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin−orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers

A nonlinear magnetoresistance—called unidirectional spin-Hall magnetoresistance—is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of unidirectional spin-Hall magnetoresistance (USMR), both ferromagnetic and heavy metallic layer thickness dependence of the USMR are presented in a Pt/Co/AlOx trilayer at room temperature. To avoid ambiguities, second harmonic Hall measurements are used for separating spin-Hall and thermal contributions to the non-linear magnetoresistance. The experimental results are fitted by using a drift-diffusion theory, with parameters extracted from an analysis of longitudinal resistivity of the Co layer within the framework of the Fuchs-Sondheimer model. A good agreement with the theory is found, demonstrating that the USMR is governed by both the spin-Hall effect in the heavy metallic layer and the metallic diffusion process in the ferromagnetic layer.

A multi-state memory device based on the unidirectional spin Hall magnetoresistance

We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states (⇉, ⇄, ⇆, ⇇) in which the system can be found. Combined with the possibility of controlling the individual FMs by spin-orbit torques, we propose that it is possible to build an all-electrical lateral two-terminal multi-bit-per-cell memory device.