Undoped ZnS Research Articles

Optical and magnetic properties of diluted magnetic semiconductor Zn0.95M0.05S nanorods prepared by a hydrothermal method

AbstractPure ZnS and doped Zn0.95M0.05S (M = Cr, Ni, Co, Fe and Mn) nanorods were successfully prepared by a hydrothermal method. The effects of the variety of doped elements on the crystal microstructure, morphology, optical and magnetic properties of the samples were investigated by means of X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, X-ray energy dispersive spectrometry, photoluminescence spectroscopy, UV–Visible diffuse reflectance spectroscopy and vibrating sample magnetometry. The experimental results show that all samples synthesized by this method possess single phase wurtzite structure with good crystallization, transition metal ions (M = Cr, Ni, Co, Fe and Mn) substitute for the lattice site of Zn2+ and generate single-phase Zn0.95M0.05S nanostructures. The morphologies of the samples are one-dimensional nanorods with good dispersion. The optical band gap of doped Zn0.95M0.05S decreases as the doping ion radius increases, and red shift occurs compared to undoped ZnS nanocrystals. Photoluminescence spectra exhibit clear ultraviolet emission and blue emission. Magnetic measurements indicate that the undoped and doped ZnS samples are ferromagnetic at room temperature.

X-ray sensing performance of ZnS:Cr film synthesised by a chemical bath deposition technique

We report the X-ray sensing performance of Cr doped ZnS film synthesised by a chemical bath deposition technique and present a comparative study of the detection sensitivity between the Cr doped and an un-doped ZnS film. Due to doping of Cr in ZnS, the X-ray diffraction peaks of ZnS shifted towards higher diffraction angle, average crystallite size decreased and microstrain as well as the roughness of the films, increased. In addition, the band gap also decreased from 3.38 to 3.23 eV. Current-voltage characteristics of the films were studied under dark condition and under X-ray radiation. The doping of trivalent Cr in ZnS matrix offered excess electrons for conduction. As a result, the conductivity of the doped film was found to be ∼10 times greater than that of the un-doped film. The doped films under X-ray give more current than the un-doped one. This makes the doped films more useful than the un-doped one. However, the un-doped film was found to be more effective to detect any change in energy of the X-ray radiation. Regarding response-time, the rise time of radiation induced current in the doped film is found to be 0.80 s which is shorter than that in the un-doped film. On the other hand, the decay time in the doped film is 1.67 s which is longer than that in the un-doped film. The magnitudes of the time differences between the doped and un-doped films were not very large and therefore, the effect of doping on the response time is negligibly small. Owing to higher conductivity, the Cr doped films are found to be more useful than the un-doped one.

Photoluminescence and applications of Ni:ZnS in photovoltaic cells

An enormous amount of development has been made in the field of photovoltaics in the last 50 odd years. In recent years, the uses of semiconductor nanoparticles have given a new impetus and direction to research in the field of solar cells. This is due to the excellent photoemission properties shown by semiconductors in the quantum dot (QD) state. ZnS QDs show a further interesting feature where their photoemission properties show perceivable changes on adding dopants such as nickel. In the present work, we describe the characterization studies made on Ni:ZnS thin films using photoluminescence (PL), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS), and further reports their performance as an absorbing layer in a hybrid solar cell along with poly(3-hexylthiophene) (P3HT). Fabricated Ni:ZnS cell showed a conversion efficiency of 0.25 ± 0.05% with VOC and JSC of 560 mV and 0.11 mA/cm2, respectively. Although the absolute conversion efficiency appears low (only 0.25%), the addition of nickel was found to have improved the efficiency by a hundredfold compared with undoped ZnS.

Terbium-doped ZnS quantum dots: Structural, morphological, optical, photoluminescence, and photocatalytic properties

Terbium (0, 2, and 4 at%)-doped ZnS quantum dots (QDs) were synthesized via a solvothermal method. The crystal structures of the synthesized QDs were determined to be zinc blend by X-ray powder diffraction (XRD) and Raman analyses. Transmission electron microscopy (TEM) studies revealed that particles with a mean size of 2–4 nm were formed. An X-ray photo electron spectroscopy (XPS) examination disclosed the existence of terbium with a trivalent state in the ZnS host lattice. The absorption bands of all QDs were located around 325 nm (3.81 eV) and were higher than that of the bulk ZnS band gap (3.67 eV), consistent with the quantum confinement effect. The photoluminescence spectra of the terbium-doped samples displayed five emission peaks at 467 nm (5D4→7F3), 491 nm (5D4 → 7F6), 460 nm (5D4 – 7F5), 484 nm (5D4 – 7F4), and 530 nm (5D4 – 7F3), respectively. The terbium-doped QDs exhibited a higher photocatalytic activity during the degradation of crystal violet dye under UV-light illumination compared to the undoped ZnS QDs. These interesting properties of terbium-doped ZnS QDs are potentially useful for both luminescent and photocatalysis applications.

Power-loss analysis of a dopant-free ZnS/p-Si heterojunction solar cell with WO3 as hole-selective contact

A novel dopant-free ZnS/p-Si heterojunction solar cell with WO3 thin films as hole-selective contact was fabricated using thermal evaporation method. The obtained maximum power conversion efficiency (PCE) of 10.94% is the highest recorded value for ZnS/p-Si heterojunction solar cells, to the best of our knowledge. The transfer line matrix (TLM) measurements indicate that the contact between WO3 thin films and p-Si is ohmic behavior, with a contact resistivity (ρc) of 12.7 mΩ cm2. The forming mechanism of the ohmic contact behavior between WO3 thin films and p-Si was explained from the aspect of energy band. A power-loss analysis based on the ZnS/p-Si heterojunction solar cell was carried out for the first time. The results reveal that shading loss, NIR parasitic absorption, and base collection loss occupy the main optical loss pathways, while the bulk resistance of the undoped ZnS thin films and the finger contact resistivity are the most limiting series-resistance components. Minority-carrier lifetime measurments of p-Si, which was passivated with polystyrenesulfonate (PSS) thin films, indicate that the poor quality of p-Si is likely responsible for the shunt-resistance loss. Based on the power-loss analysis, several optimization strategies are proposed.

Blue, Green and Yellow Emissions at the Same Time from Mn-doped ZnS Microbelts

We present an investigation of the morphology, structure, composition and optical properties of ZnS:Mn2+ microbelts grown by the thermal evaporation method using ZnS powder and MnCl2.4H2O powder as precursor materials. The SEM images of the products show that ZnS:Mn2+ microbelts are bigger and shorter than ZnS microbelts. EDS reveals that the composition of the microbelts include Zn, S, O, Mn and Cl elements. The atom rate of oxygen composition of the doped microbelts seem to be slightly lower than undoped ones. XRD pattern of the prepared microbelts shows that ZnO coexists with ZnS on the undoped microbelts. However, at the Mn-doped microbelts, the component phase of ZnO is disappeared. Photoluminescence spectra of undoped ZnS microbelts reveal a strong broad emission band at visible wavelength region and a weak ultraviolet band. Interestingly, when Mn2+ is doped into the microbelts, the visible emission band is separated into blue, green, and yellow bands peaking at around 442, 520 nm, and 572 nm, respectively. The effects of Mn2+ ions on the emission bands is discussed in detail.

Structural and optical properties of nanocrystalline ZnS and ZnS:Al films

ZnS and ZnS:Al films have been deposited by ultrasonic spray pyrolysis (USP) method. Three different atomic ratios of aluminium were used as the dopant element. The effects of aluminum incorporation on structural and optical properties of the ZnS films have been investigated. The XRD analysis showed that the cubic structure of the ZnS was not much affected by Al doping. The crystal size of the films decreased, as the Al ratio increased. Al incorporation caused an increase in the intensity of ZnS films' peaks observed in Raman spectra and nearly symmetrical peaks were observed. Al doping caused a small decrease in optical band gap of the ZnS film. The coating of ZnS:Al films on the surface was quite good and there were not any deformation in their crystallization levels. Reflectance values of films are about 5% in the visible region but a little decrease is seen with aluminum doping. We can say that Al doping tends to improve the optical properties of the ZnS:Al films when compared with the undoped ZnS.

Analysis of the structure, particle morphology and photoluminescent properties of ZnS:Mn2+ nanoparticulate phosphors

The structure, particle morphology and photoluminescent properties of n2+ doped ZnS nanoparticles are reported. The X-ray powder diffraction studies showed that incorporation of Mn2+ did not cause any change to the crystallized cubic (sphalerite) phase of ZnS but it reduced crystallinity due to increased incoherent scattering resulting in increased broadening of the diffraction peaks. The average crystallite size calculated from the broadening of the X-ray diffraction peaks using Scherrer equation was ∼2nm implying that our particles were highly quantum confined. The field emission scanning electron microscopy data confirmed that the undoped ZnS powders consisted mainly of an agglomeration of spherical particles while the Mn2+ doped powders consistent of particles with irregular shapes. The photoluminescence spectroscopy showed simultaneous blue and orange emissions associated with radiative transitions in ZnS and Mn2+ respectively. Postulated mechanism of this dual emission is discussed.

Synthesis and characterization of Ag doped ZnS quantum dots for enhanced photocatalysis of Strychnine as a poison: Charge transfer behavior study by electrochemical impedance and time-resolved photoluminescence spectroscopy

In this study, the photocatalytic degradation of Strychnine was investigated by ZnS quantum dots and doped with silver in UV systems. ZnS and Ag-ZnS quantum dots were synthesized by chemical method and characterized by powder X-ray diffraction, transmission electron microscopy, UV–vis spectra and photoluminescence. The charge transfer process on the semicon-ductor/electrolyte interface was investigated via electrochemical impedance spectroscopy (EIS) and time-resolved photoluminescence. The average diameters of ZnS and Ag doped ZnS QDs were 3.0–5.0nm and 3.0–5.3nm, respectively. The band gap of ZnS and Ag-ZnS QDs was computed as 3.47 and 3.1eV, respectively. The surface area values of ZnS and Ag-ZnS QDs have been found as 78.25 and 89.54m2/g, respectively. The influences of key operating parameters such as initial pH, catalyst dosage, UV radiation intensity, reaction time as well as the effect of initial Strychnine concentration on mineralization extents were studied. The results of the study showed that the maximum removal efficiency of Strychnine had been achieved by un-doped and Ag-doped ZnS QDs at radiation intensity of 100W/m2, at time of 60min, pH of 3 and initial Strychnine concentration of 20mg/ml. Also the observations clearly showed that the photocatalysis process with Ag doped ZnS QDs are more effective than un-doped ZnS QDs.

Effect of Indium doping on the photoelectrochemical and photocatalytic properties of zinc sulphide

In this article, the visible light enhanced photoelectrochemical and photocatalytic properties for nano-sized Indium doped Zinc Sulphide compared to undoped ZnS had been reported. Both ZnS and In doped ZnS (In-ZnS) were synthesized through soft chemical route by a co-precipitation method. ZnS and In doped ZnS existed as single phase having cubic structure. These samples were nano-sized with a particle size of approximately 24nm. SEM images revealed the presence of aggregated particles with a wide distribution in the particle size. UV–visible Diffused Reflectance Spectra showed improved visible light absorption for the doped sample as compared to the undoped sample. X-ray photoelectron studies indicated the presence of indium as In3+ in In-ZnS. Photoluminescence studies suggested the presence of both zinc and sulfur vacancies in these samples. After the doping of ZnS with In, there was an increase in photocurrent under visible light irradiation. The doped sample also exhibited enhanced photocatalytic activity for hydrogen generation. A good correlation between photocatalytic and photoelectrochemical properties was seen for both ZnS and In doped ZnS. The improvement in In doped ZnS has been attributed to the increased visible light absorption arising due to the decreased band gap of the doped sample.

Synthesis and Optical Characterization of Oxygen-Incorporated ZnS(1-x)O x for UV-Visible Color Palette Light-Emission Matter.

Single crystals of oxygen-incorporated ZnS (i.e., ZnS(1–x)Ox series) are environment-friendly wide-band-gap semiconductors available for light-emitting devices and solar cell use. The series of materials has considerable potential for use in visible ultraviolet areas with flexibility for palette emissions. In this study, we grow oxygen-incorporated ZnS series crystals by chemical vapor transport method with iodine (I2) as the transport agent. Three different oxygen-incorporated crystals of undoped ZnS, ZnS0.94O0.06, and ZnS0.88O0.12 are studied. Through structural studies, ZnS doped with oxygen crystallizes in the main sphalerite phase and a little wurtzite structure. The lattice constants of the major cubic phase are determined to be a = 5.43 Å (ZnS), 5.41 Å (ZnS0.94O0.06), and 5.39 Å (ZnS0.88O0.12). Three band-edge excitonic transitions are simultaneously detected by thermoreflectance measurement for the ZnS, ZnS0.94O0.06, and ZnS0.88O0.12 series samples. The energy positions of the band-edge transitions decrease as the oxygen content increases in the ZnS(1–x)Ox series. Defect-state and surface-state emissions, including sulfur vacancy, oxygen vacancy, zinc interstitial, and so forth, can emit approximately full-color spectra from the near band edge of the ZnS(1–x)Ox series crystals. With adjusting the oxygen content, the ZnS(1–x)Ox can be a series of color-palette luminescence matters that applied for fluorescent display or light-emitting device.

Synthesis and photoluminescence of Eu3+ and O2- co-doped ZnS nanoparticles with yellow emission synthesized by a solid-state reaction

ZnS:Eu, O nanoparticles were synthesized by a solid-state reaction at 90°C for the first time. The effect of Eu3+ and O2- co-doping on the photoluminescence (PL) of the samples was researched. X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectrum (EDS), ultraviolet-visible diffusion reflection spectra, and PL spectra were used to characterize their crystal structure, chemical compositions, diameter, and PL properties. The results showed that all nanoparticles had a cubic blende crystal structure and an average crystallite size of 3.3–4.0nm. Besides the emission from the ZnS host, typical luminescence of Eu3+ was all observed in the emission spectra of ZnS:Eu, O nanoparticles, and ZnS:Eu, O nanoparticles showed yellow emissions under 464nm excitation. The PL intensity remarkably increased with the increase of O2- concentration, and the maximum emission with correlated color temperature ~ 2419K was obtained in the ZnS:1% Eu, 5% O sample, and about 2.75 times stronger than the undoped ZnS nanoparticles. Mechanism for the enhanced luminescence was discussed. This work suggests that Eu3+ and O2- co-doped ZnS nanoparticles prepared by the low temperature solid-state reaction method can be used for Light-Emitting Diodes.

Properties of sputtered ZnS and ZnS:A (A = Er, Yb) films grown at low substrate temperatures

Radio-frequency magnetron sputtering was used to deposit ZnS thin films doped with rare earth elements (Er and Yb) on glass substrates at two different temperatures (room temperature and 180 °C). The crystal structure, surface morphology, and optical properties of the deposited films were studied as a function of the deposition variables as a first step in the possible application of lanthanide-doped ZnS as buffer layer and/or window layer in thin film photovoltaic devices. From the x-ray diffraction patterns, it was found that the samples have preferred orientation depending on the substrate temperature and on the doping level. Moreover, optical constants were determined from spectroscopic ellipsometry measurements and found that samples of undoped ZnS, in particular, exhibit optical constants that are in good agreement with those reported in the literature for the two ZnS crystalline phases. The band gap (Eg) was calculated using the extinction coefficient (k), which was reduced according to the degree of doping. Also, based on ultraviolet-visible spectroscopy measurements, it was determined that the films have a transmittance of 80% for wavelengths above 350 nm, and a shift of the absorption edge to longer wavelengths when the degree of doping was increased. Finally, photoluminescence measurements were performed at room and low temperature using below bandgap excitation to probe defect states within the gap, as well as the luminescent characteristics of the Er3+ and Yb3+ ions in the ZnS host.

Investigations of doping induced structural, optical and magnetic properties of Ni doped ZnS diluted magnetic semiconductors

We have synthesized diluted magnetic semiconducting nanoparticles of undoped and Ni doped ZnS, by varying Ni concentration, via chemical co-precipitation technique. The formation of cubic zinc blend structure and the incorporation of Ni into ZnS lattice are confirmed by the X-ray diffraction (XRD) measurements. Rietveld refinement of the structural parameters shows a reasonable GOF value. Transmission electron microscopy result reveals the crystalline nature of the ZnS nanocrystal with an average d-spacing of 3.1 A and also clarifies that the average particle size of the nanoparticles is in the range of 3–7 nm, which are consistence with the XRD results. UV–visible measurement depicts that the band gap of the Ni doped ZnS nanoparticles is higher than that of bulk ZnS, which is a result of the quantum confinement effect. Room temperature photoluminescence (PL) spectra shows the green emission in Ni doped ZnS nanoparticles, which is the characteristic 3T2–3A2 transition of Ni2+ ion and also depicts the PL quenching effect at higher Ni concentration. Fourier transform infrared measurements show different stretching and vibrational modes and also show the resonance interactions of the sulphide ions. Raman analysis reveals different phonon modes of ZnS and confirms the defect states. Room temperature magnetic measurements demonstrate the ferromagnetic behavior in undoped ZnS nanoparticles due to the presence of structural defects. Systemic studies on the magnetic properties revels that all the doped ZnS nanoparticles exhibit the carrier mediated ferromagnetism and the saturation magnetization increases with increasing concentration of Ni.

Effect of Terbium Doping on the Structural and Magnetic Properties of ZnS Nanoparticles

The authors have presented synthesis and structural and magnetic properties of Tb (0, 2, 4, and 6 at.%)doped ZnS semiconducting nanoparticles and employed via chemical co-precipitation process using polyethylene glycol (PEG) as capping agent. X-ray diffraction (XRD) and selected area electron diffraction (SAED) studies confirm the formation of singlephase, cubic structure, nanometric samples (˜10 nm). Highresolution transmission electron microscopy (HRTEM) analyses of the suspensions revealed the size of the particles in the range 5–8 nm. The undoped ZnS sample displayed the expected diamagnetic behavior and the terbiumdoped ZnS samples exhibited room temperature paramagnetic character as a function of Tbdoping concentration.The observed paramagnetism may be due to the random distribution of the terbium ions into the ZnS crystal lattice giving rise to the formation of feeble interaction.

Room Temperature Ferromagnetic and Optical Properties of Chrome Doped ZnS Nanorods Prepared by Hydrothermal Method

Cr doped Zn1-xCrxS nanorods with different concentration ratio (x=0, 0.01, 0.03, and 0.05) were successfully synthesized by hydrothermal method. The crystal microstructure, morphology, chemical composition, and optical and magnetic properties of the samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), diffuse-reflectance spectroscopy (DRS), photoluminescence (PL) spectra, and the vibrating sample magnetometer (VSM). All the samples synthesized by this method exhibited single-phase wurtzite structure with good crystallization as demonstrated by XRD studies, which indicated that all Cr ions successfully substituted for the lattice site of Zn2+ and generated single-phase Zn1-xCrxS. DRS revealed the band gap of doped Zn1-xCrxS underwent blue shift compared to that of the bulk ZnS. PL spectra showed obvious ultraviolet emission peak at 375 nm and two blue emissions appear about 500 and 580 nm. The blue emissions intensity of doped samples improved with the increase of Cr concentration, comparing to pure ZnS. Magnetic measurements indicated that the undoped and doped ZnS nanorods exhibited well-defined ferromagnetic behavior at room temperature. The saturation magnetization weakened significantly with increasing Cr concentration comparing to pure ZnS and reached minimum for 3% Cr.

Ferromagnetic behavior of non-stoichiometric ZnS microspheres with a nanoplate-netted surface

(A) SEM images of undoped ZnS microspheres; (B) M–H magnetic hysteresis loops for the atomic ratio of Zn to S equal to 0.966 (black line) and 1.32 (blue line).

Optical and Magnetic Properties of Ni Doped ZnS Diluted Magnetic Semiconductors Synthesized by Hydrothermal Method

Diluted magnetic semiconductors Zn1-xNixS with different consistency ratio (x = 0, 0.01, 0.03, 0.05, and 0.07) were successfully synthesized by hydrothermal method using ethylenediamine as a modifier. The influence of Ni doping concentration on the microstructure, morphology, and optical and magnetic properties of undoped and Ni doped ZnS nanocrystals was characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), ultraviolet-visible spectroscopy (UV-vis), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectra (PL), and the vibrating sample magnetometer (VSM), respectively. The experiment results show the substitution of Ni2+ on Zn2+ sites without changing the hexagonal wurtzite structure of ZnS and generate single-phase Zn1-xNixS with good crystallization. The lattice constant causes distortion and decreases with the increase of Ni2+ doped concentration. The appearance of the samples is one-dimensional well-dispersed nanorods. UV-vis spectra reveal the band gap of all Zn1-xNixS samples greater than that of bulk ZnS (3.67 eV), and blue shift phenomenon occurs. The photoluminescence spectra of undoped and doped samples possess the broad blue emission band in the range of 400–650 nm; the PL intensities of Zn1-xNixS nanorods increase with the increase of Ni content comparing to pure ZnS and reach maximum for x = 0.03. Magnetic measurements indicated that the undoped ZnS samples are superparamagnetic, whereas the doped samples exhibit ferromagnetism.

Optical properties and toxicity of undoped and Mn-doped ZnS semiconductor nanoparticles synthesized through the aqueous route

Undoped and Mn-doped ZnS nanoparticles were synthesized at 95 °C in basic aqueous solution using the nucleation-doping strategy. Various samples of the Mn:ZnS NPs with 5, 10 and 20% of Mn dopant have been prepared and characterized using X-ray diffraction, energy-dispersive X-ray analysis, high resolution electron microscopy and photoluminescence (PL) measurements. When increasing the concentration of manganese Mn, the photoluminescence intensity gradually decreases. The PL spectra of the Mn-doped ZnS nanoparticles at room temperature exhibit both, the 450 nm blue defect-related emission and the 592 nm orange Mn2+ emission. It is vital to obtain NPs that meet the application requirements, however their environmental toxicity needs to be investigated. In this study, the induction of oxidative stress within the digestive gland of the Ruditapes decussatus organism (clam) is described. Antioxidant enzyme activities (superoxide dismutase (SOD) and catalase (CAT)) as well as malondialdehyde (MDA) levels have been determined in the digestive gland after exposure to 100 μg/L of ZnS, ZnS:Mn (5%), ZnS:Mn (10%) and ZnS:Mn (20%).The nanomaterials studied exhibit different responses in the digestive gland. Undoped Mn-ZnS has no effect on the markers considered, showing the limited interaction between this nanoparticle and the cells of the test organisms. In contrast, Mn-doped ZnS increases the activities of SOD and CAT and the level of MDA species, although this toxicity is highly dependent on the chemical properties of the material.These findings provide ideas for future considerations of ZnS nanoparticles, as well as information on the interaction between these materials and an aquatic environment.These data are the first evidence available of the formation of ZnS NPs using aqueous method and are an indication of the importance of knowing the biological target of the NPs when testing their potential impact on environmental model organisms.

Optical and magnetic properties of Co and Ni co-doped ZnS nanorods prepared by hydrothermal method

Undoped ZnS and doped Zn0.95-xCo0.05NixS nanorods with different concentration ratio (x = 0.01, 0.03 and 0.05) were successfully synthesized by hydrothermal method. The crystal microstructure, morphology, constituent elements, optical and magnetic properties of the samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), Ultraviolet–visible spectroscopy (UV–vis), photoluminescence spectra (PL) and the vibrating sample magnetometer (VSM). All the samples synthesized by this method exhibit single phase wurtzite structure with good crystallization as demonstrated by XRD studies, which indicates that all Co2+ and Ni2+ successfully substituted for the lattice site of Zn2+ and generate single-phase Zn0.95-xCo0.05NixS. FESEM and HRTEM demonstrate that the morphology are one-dimensional rod-like shape with good dispersion. EDAX spectra confirmed the presence of Zinc, sulfur, Cobalt and Nickel elements with near stoichiometry. UV–vis spectra reveals the blue shift in the direct band gap of the co-doped ZnS nanorods. PL spectra shows obvious ultraviolet emission peak about 375 nm, and the blue emissions appear significant quenching phenomenon with the increasing of Ni2+ doping concentration. Magnetic measurements indicate that the undoped ZnS and co-doped samples are ferromagnetic behavior at room temperature.