This research investigates surface damage in electronic devices from laser irradiation, particularly focusing on voids, cracks, and vacancies. We discovered that applying a high-density ultrathin SiO2 layer effectively prevents such defects. Atomic Force Microscopy (AFM) analysis showed a significant reduction in surface roughness, with the Rq factor value dropping to 0.158 nm in samples coated with this SiO2 layer. Additionally, X-ray Photoelectron Spectroscopy (XPS) was used to study suboxide formation in the Al2O3/Si structure, revealing insights into defect origins. Electrical tests indicated a substantial decrease in laser-induced damage, evidenced by a leakage current density reduction to 2.4 × 10−6 A/cm2, markedly lower than uncoated samples. Post-metallization annealing (PMA) further improved results, with the interface state density decreasing to 0.63 × 1012 atoms eV−1 cm−2. Our findings highlight the effectiveness of the high-density ultrathin SiO2 layer in mitigating surface defects caused by continuous wave (CW) laser irradiation, promising significant advancements in electronic device manufacturing through potential application in CW laser annealing processes.