Abstract In this study, the ultrasonic spray pyrolysis (USP) technique was employed to fabricate pure and 3% Ni-doped copper oxide (CuO) thin films (TFs) on In2O3/SnO2 (ITO) coated glass substrates. X-ray diffraction (XRD) analysis revealed that both pure and 3% Ni-doped CuO TFs exhibit a polycrystalline structure with the tenorite phase oriented preferentially along the (111) plane. The morphological properties of these TFs were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM) imaging. Energy dispersive x-ray spectroscopy (EDX) confirmed that the deposited TFs achieved the desired stoichiometry. The electrochemical properties of both pure and 3% Ni-doped CuO TFs were evaluated using cyclic voltammetry (CV), galvanostatic charge/discharge (GCD), and electrochemical impedance spectroscopy (EIS). At a current density of 1 A g−1, the specific capacitance of pure CuO TFs was found to be 78 F g−1, decreasing to 2 F g−1 at 10 A g−1. In contrast, Ni-doped CuO TFs exhibited a specific capacitance of 722 F g−1 at 1 A g−1 and 20 F g−1 at 10 A g−1. These results indicate that Ni-doping significantly enhances the specific capacitance values. The superior performance of Ni-doped CuO electrodes is attributed to their uniformly high porosity and improved electrical conductivity, demonstrating Ni-doped CuO as an optimal electrode material for pseudocapacitors.
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