Abstract
MISIM (metal-insulator-semiconductor-insulator-metal) structures of alternating current thin film electroluminescent (ACTFEL) devices were deposited on ATO/glass substrates by the ultrasonic spray pyrolysis technique. Zirconium oxide and terbium doped zinc sulfide were used as dielectric and semiconductor phosphor layers, respectively. A focused ion beam equipment was used to prepare a lamella of the MISIM structure, for cross-sectional scanning electron microscopy analysis in the STEM mode. Chemical analysis by energy-dispersive X-ray spectroscopy (EDS) elemental maps was also made for the identification of the distribution of the elements through the layers composing the MISIM structure. Characteristic Tb3+ emission bands due the 5D4 ->7FJ transitions were obtained by AC voltage application at 10 kHz with the main peak centered at 542 nm. An increase in the electroluminescent intensity and a shift of the CIE coordinates toward a purer green color with increasing the applied voltage was observed. The threshold voltage of these green electroluminescent devices was 46 Vrms, and a luminance up to 41 cd/m2 was obtained for the maximum applied voltage of 76.9 Vrms.
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