Abstract
Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta/sub 2/O/sub 5/ shows rougher surface resulting in the rougher surface of ZnS:Pr,Ce layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness. Furthermore, it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta/sub 2/O/sub 5/ thin film. Internal charge-phosphor field (Q/sub int/-F/sub p/) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta/sub 2/O/sub 5/-ZnS:Pr,Ce-Al and ITO-Ta/sub 2/O/sub 5/-ZnS:Pr,Ce-Ta/sub 2/O/sub 5/-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore, we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.
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