Electrical, optical, and structural properties of ultrathin films of Ag, Au, and Al were investigated. MOS solar cells were fabricated with Ag, and Au barrier metals on n-type and with Al barrier metal on p-type silicon. The short-circuit current density Jsc was measured as a function of the average metal layer thickness tm. The film structure was examined under a transmission electron miscroscope. The optical transmittance T was measured as a function of the wavelength λ with tm as a parameter. The transmission electromicrographs indicated that, in the Ag and Au case, the film network structure attained electrical continuity at a lower value of tm than in the case of Al. Also, in the Ag and Au case, surface covered by the film was lower. Largely due to this, optical transmittance was higher in the Ag and Au case than in the case of Al. The T(λ) characteristics exhibited strong features in the Ag and Au case but not in the Al case. The profiles of Jsc(tm) were found to be peaked with the maximum occuring around 55 Å for Ag and Au and around 70 Å for Al. Furthermore, the peaks were sharp in the Al case, but were broad in the Ag and Au case. Also, the peak values were larger in the Ag and Au case. The higher rate of degradation of Ag and Au MOS cells than Al MOS cells can be related to the presence of large discontinuity in Ag and Au films.