The surface properties are vital aspects in improving photovoltaic performance of perovskite solar cells (PSCs). Except for the upper surface of perovskite, the hidden buried interface which supports the beginning of perovskite film crystallization is of equal great importance for the construction of high-efficiency PSCs. Herein, we use urea phosphate (UPP) to build a bilateral chemical bridge in the buried interface under perovskite layer, to simultaneously improve the properties of SnO2 ETL and the upper perovskite. On one hand, the interaction between UPP and SnO2 passivates the defects of the SnO2 and facilitates the formation of ultra-smooth surface for superior interfacial contact. On the other hand, the chemical interaction between UPP and perovskite contributes to the optimization of crystal nucleation and growth, which improves the crystalline quality of perovskite, inhibits the formation of voids at the buried interface and reduces the defects of the grain boundary. Benefiting from the optimized buried interfacial contact, suppressed defects, accelerated charge extraction and modified energy level alignment, the UPP-processed device delivers an improved power conversion efficiency of 24.54 %, with effective suppression of hysteresis. Moreover, the stability of device is also improved owing to the reduction of trap defects. This work provides a feasible strategy to tune the buried interface between the charge transfer layer and perovskite layer for fabrication of efficient and stable PSCs.
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