Ultralow Current Density Research Articles

Ultrafast Tailoring Amorphous Zn0.25V2O5 with Precision-Engineered Artificial Atomic-Layer 1T'-MoS2 Cathode Electrolyte Interphase for Advanced Aqueous Zinc-Ion Batteries.

Vanadium (V)-based oxides as cathode materials for aqueous zinc-ion batteries (AZIBs) still encounter challenges such as sluggish Zn2+ diffusion kinetics and V-dissolution, thus leading to severe capacity fading and limited life span. Here, we designed an ultrafast and facile colloidal chemical synthesis strategy based on crystalline Zn0.25V2O5 (c-ZVO) to successfully prepare a-ZVO@MoS2 core@shell heterostructures, where atomic-layer MoS2 uniformly coats on the surface of amorphous a-ZVO. The tailored amorphous structure of a-ZVO provides more isotropic pathways and active sites for Zn2+, thus significantly enhancing the Zn2+ diffusion kinetics during charge-discharge processes. Meanwhile, as an efficient artificial cathode electrolyte interphase, the precision-engineered atomic-layer MoS2 with semi-metallic 1T' phase not only contributes to improved electron transport but also effectively inhibits the V-dissolution of a-ZVO. Therefore, the prepared a-ZVO@MoS2 and conceptually validated a-V2O5@MoS2 derived from commercial c-V2O5 exhibit excellent cycling stability at an ultralow current density (0.05 A g-1) while maintaining good rate capability and capacity retention. This research achievement provides a new effective strategy for various amorphous cathode designs for AZIBs with superior performance.

Ultrafast Tailoring Amorphous Zn0.25V2O5 with Precision‐Engineered Artificial Atomic‐Layer 1T′‐MoS2 Cathode Electrolyte Interphase for Advanced Aqueous Zinc‐Ion Batteries

AbstractVanadium (V)‐based oxides as cathode materials for aqueous zinc‐ion batteries (AZIBs) still encounter challenges such as sluggish Zn2+ diffusion kinetics and V‐dissolution, thus leading to severe capacity fading and limited life span. Here, we designed an ultrafast and facile colloidal chemical synthesis strategy based on crystalline Zn0.25V2O5 (c‐ZVO) to successfully prepare a‐ZVO@MoS2 core@shell heterostructures, where atomic‐layer MoS2 uniformly coats on the surface of amorphous a‐ZVO. The tailored amorphous structure of a‐ZVO provides more isotropic pathways and active sites for Zn2+, thus significantly enhancing the Zn2+ diffusion kinetics during charge–discharge processes. Meanwhile, as an efficient artificial cathode electrolyte interphase, the precision‐engineered atomic‐layer MoS2 with semi‐metallic 1T′ phase not only contributes to improved electron transport but also effectively inhibits the V‐dissolution of a‐ZVO. Therefore, the prepared a‐ZVO@MoS2 and conceptually validated a‐V2O5@MoS2 derived from commercial c‐V2O5 exhibit excellent cycling stability at an ultralow current density (0.05 A g−1) while maintaining good rate capability and capacity retention. This research achievement provides a new effective strategy for various amorphous cathode designs for AZIBs with superior performance.

PBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice.

An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10-4 A/cm2 and a peak responsivity of 0.38 A/W under a reverse bias of -1 V at 300 K. The detector shows a peak detectivity of 1.62 × 1011 cm·Hz1/2/W and 4.63 × 1010 cm·Hz1/2/W under a reverse bias of -1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.

A strategy for achieving high-performance single layer polymer photodetectors through dark current reduction using PMMA additives

Suppressing dark current density is crucial for optimizing the performance of organic photodetectors (PDs), particularly in terms of detectivity (D∗) and linear dynamic range (LDR). Organic PDs often utilize the bulk heterojunction structure of organic solar cells to significantly increase photocurrent. However, unlike solar cells, which are unaffected by dark current, photodetectors' performance is substantially limited by it. The interconnected network of bulk heterojunctions leads to a noticeable increase in dark current, thus degrading device performance. Typically, reducing dark current involves adding a modification layer or using multilayer planar heterojunctions, which effectively reduce dark current but often delay response speed and complicate manufacturing. This study presents an alternative approach by incorporating a small concentration of PMMA into single-layer polymer photodetectors, significantly reducing dark current without affecting photocurrent. For this single-layer polymer PD, an ultra-low dark current density of 1.25 × 10−8 A/cm2, a high Dsh∗ of 2.74 × 1012 Jones, an LDR of 120.5 dB, and a fast response time with 1.6 μs were achieved. The capacitance-voltage (C-V), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements revealed that the PMMA additive reduces internal defects, increases bulk resistance, optimizes phase separation, and enhances carrier transport efficiency. The improved device performances are attributed to a more efficient vertical arrangement of the donor-acceptor interface and carrier channels, thus reducing carrier recombination loss. These findings offer a new direction for fabricating high-performance single-layer photodetectors.

Flexible Near‐Infrared Organic Photodetectors With Ultralow Dark Current by Layer‐by‐Layer Blade Coating

AbstractNear‐infrared organic photodetector (NIR OPD) is promising for emerging wearable biosensing applications. However, their practical application is hindered by the high dark currents of devices that limit the detection of faint light. In this work, highly sensitive flexible NIR OPDs are presented with ultralow dark currents, fabricated using a layer‐by‐layer blade coating (LBL‐BC) technique. In the active layer, a fully fused‐ring molecule FM2, featuring a fixed molecular skeleton, is employed as an electron acceptor to reduce the trap density. The LBL‐BC method enhances the film order and phase purity of the active layer, significantly reduces the trap density of states, and optimizes the vertical phase separation structure of the thin film, thereby preventing reverse charge injection. As a result, a highly sensitive flexible NIR OPD is developed exhibiting an ultralow dark current density of 4.83 × 10−9 A cm−2 at −0.3 V bias and an extremely low noise current density of 7.65 × 10−15 A Hz−1/2 at 10 Hz, comparable to commercial silicon photodiodes. Furthermore, this flexible device is successfully applied for real‐time monitoring of human heartbeat rate, oxygen saturation, and motion recognition. These findings advance the development of highly sensitive NIR OPDs and their application in wearable biosensing technologies.

Superhydrophobic and Highly Flexible Artificial Solid Electrolyte Interphase Inspired by Lotus Effect Toward Highly Stable Zn Anode

AbstractDue to their cost‐effectiveness, high safety, and environmental friendliness, aqueous zinc‐ion batteries (AZIBs) are among the most promising technologies for next‐generation energy storage systems. Nonetheless, dendrite growth, hydrogen evolution, and corrosion at zinc (Zn) anode severely hinder their practical application. In this study, a combination of molecular self‐assembly engineering, squeegee coating, and air spraying process is employed to create a superhydrophobic and highly flexible artificial solid‐electrolyte‐interface layer on Zn anode (denoted as SFM/Zn). Self‐assembled monolayer of triethoxy‐3‐aminopropylsilane optimizes Zn2+ migration kinetics. The superhydrophobic interface, formed by polydimethylsiloxane (PDMS) and trimethoxy(octadecyl)silane (OTS)‐modified nanosilicon dioxide particles, inhibits water‐related side reactions. Furthermore, the highly flexible PDMS serves as a dynamic adaptive interface for Zn anode, effectively alleviating the “tip effect”. Consequently, the SFM/Zn||SFM/Zn symmetrical cells enable reversible and stable Zn plating/stripping at both ultralow current density (0.2 mA cm−2) and ultrahigh current density (45 mA cm−2). The assembled Zn‐vanadium (SFM/Zn||NH4V4O10) cell deliver stable average Coulombic efficiency (nearly 100%) and ultralong cycling stability (135.5 mAh g−1 after 500 cycles at 5 A g−1 and 173.2 mAh g−1 after 1000 cycles at 2 A g−1). This innovative superhydrophobic three‐layered strategy sheds new light on designing highly durable Zn anode for high‐performance AZIBs.

Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

The characteristics of amorphous Sn-doped Ga2O3 films deposited using radio frequency magnetron sputtering at room temperature under different sputter powers have been demonstrated. A balance mechanism of energy supply and ion bombardment controlled by sputter power has been found during the deposition. The increasing growth rate as power can be due to the increased yield sputtering species indicated by an in situ optical emission spectroscopy. As the power increases to 700 W, an obvious change from discrete nanoparticles to flat-continuous film can be observed because of sufficient energy supply for oxidation reaction, which leads to the maximum ratio of lattice oxygen and Sn4+ indicating the optimal film quality and conductive property. However, a non-negligible high energy ion bombardment presented at 900 W leads to the degraded film quality. The influence of sputtering power on Sn-doped Ga2O3 solar-blind photodetectors is demonstrated. It can obtain a good performance with an ultra-low dark current density of 2.2 × 10−11 A/cm2, a substantial light-dark current ratio of 1.08 × 103 and fast rise/decay time of 1.59 s/0.54 s at 700 W. The revelation of the role of sputtering power on the properties of Sn-doped Ga2O3 films may offer an interesting direction for low-cost and high-performance solar-blind photodetectors.

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Multispectral photodetectors (PDs) operating in visible (VIS) to shortwave infrared (SWIR) wavelength ranges are highly desired for various civil and military applications. Traditional vertical p-i-n SWIR PDs lack the detection ability for VIS light due to photon dissipation in the neutral regions. Herein, an i-n type PD was proposed and demonstrated with sputtering-grown undoped Ge0.92Sn0.08/Ge multiple quantum wells (MQWs) on n-Ge substrate to realize VIS/SWIR dual-band detection from 400 to 2000 nm. Three response peaks resulted from the resonate cavity effect at 430, 660 and 1530 nm, respectively, were observed. Benefiting from the defect-free coherent GeSn/Ge MQWs and low-temperature surface plasma treatment, a remarkably low bulk leakage current density of 5.9 mA/cm2 and a low surface leakage current of 37.5 μA/cm were achieved at room temperature under −1 V, resulting in an ultralow dark current density of 13.36 mA/cm2 for a 200-μm-diameter PD. Temperature-dependent electrical characterizations revealed that the dark current was ideally dominated by carrier diffusion mechanism. Eminent detectivities of 5.2 × 108, 7.1 × 108 and 5.6 × 109 Jones at 410, 660 and 1530 nm, respectively, under −1 V were achieved simultaneously at room temperature. This work provides a path way for fabricating low-cost, VIS/SWIR dual-band PDs with complementary metal–oxide–semiconductor (CMOS) compatible technology.

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy.

Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo2O4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 104 A/cm2, which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo2O4. Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.

Ultralow Dark Current (6 fA at 1 V) in Quasi-Two-Dimensional CsGaGeSe4 Single Crystals for High Signal-to-Noise Ratio Photodetectors under Strong Electron Localization.

To satisfy the demands of photodetectors for weak-light detection, materials selected for device fabrication should have an extremely low background carrier concentration to suppress the dark current of devices. In this work, a new quasi-two-dimensional CsGaGeSe4 single crystal with an extremely low background carrier concentration was synthesized by a co-solvent reaction based on which a photoconductive detector was prepared with an ultralow dark current density (6 fA at 1 V and ∼10-10 A cm-2) and a high response speed (∼0.74 s) was achieved, presenting a great potential of being applied to the field of weak-light detection. The ultralow dark current density originates from both the good crystal quality and the strongly asymmetric band structure of CsGaGeSe4. In the darkness, electrons locally bound in the valence band bring an ultralow dark current density; after illumination, the electrons transiting to the conduction band will participate in the conduction in a non-localized state, resulting in a high signal-to-noise ratio. This work not only provides a new choice of potential materials for weak-light detection but also proposes an effective strategy for material selection.

Hybrid electrolyte engineering enables reversible Zn metal anodes at ultralow current densities

Parasitic reactions in aqueous Zn metal batteries tend to be intensified along with the decrease of current density, deteriorating the cycling stability of Zn anodes, which unfortunately have been overlooked in previous studies. Herein, an organic solvent N-Methylacetamide (NMA) is introduced into ZnSO4 electrolyte for improving the reversibility of Zn anodes. Combined with theoretical and experimental investigations, it is uncovered that NMA additives are capable of entering not only the pristine Zn2+ solvation structure ([Zn(H2O)x]2+) but also the electrical double layer structure, reducing active H2O molecule proportions and thus suppressing the corrosion reactions. Meanwhile, nucleation and growth processes are also constrained with NMA additive for its strong coordination with Zn2+, inducing dendrite-free Zn depositions. Consequently, an average Coulombic efficiency (CE) of 98.5% for 600 cycles in Zn|Cu half-cells with NMA/ZnSO4 electrolyte is obtained at an ultralow current density of 0.3 mA cm−2. Moreover, Zn|Zn symmetric cells utilizing 20 vol% NMA additive exhibit stable cycle lifespan of 1000 h. Benefitting from the enhanced reversibility of Zn anodes in NMA/ZnSO4 electrolytes, full-cells assembled with carbon cloth as cathodes deliver high performance of 5200 cycles at the current density of 64 mA g−1 with 10 μm thin Zn anodes, favoring the practical applications.

High-Performance and Stable Colloidal Quantum Dots Imager via Energy Band Engineering.

Solution-processed colloidal quantum dot (CQD) photodiodes are compatible for monolithic integration with silicon-based readout circuitry, enabling ultrahigh resolution and ultralow cost infrared imagers. However, top-illuminated CQD photodiodes for longer infrared imaging suffer from mismatched energy band alignment between narrow-bandgap CQDs and the electron transport layer. In this work, we designed a new top-illuminated structure by replacing the sputtered ZnO layer with a SnO2 layer by atomic layer deposition. Benefiting from matched energy band alignment and improved heterogeneous interface, our top-illuminated CQD photodiodes achieve a broad-band response up to 1650 nm. At 220 K, these SnO2-based devices exhibit an ultralow dark current density of 3.5 nA cm-2 at -10 mV, reaching the noise limit for passive night vision. The detectivity is 4.1 × 1012 Jones at 1530 nm. These SnO2-based devices also demonstrate exceptional operation stability. By integrating with silicon-based readout circuitry, our CQD imager realizes water/oil discrimination and see-through smoke imaging.

Low-Power and Field-Free Perpendicular Magnetic Memory Driven by Topological Insulators.

Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for low-power SOT-driven magnetic random-access memory (SOT-MRAM). In this work, a functional 3-terminal SOT-MRAM device is demonstrated by integrating the TI [(BiSb)2 Te3 ] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.5 × 105 Acm-2 is achieved in the TI-pMTJ device at room temperature, which is 1-2 orders of magnitude lower than that in conventional heavy-metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2 Te3 . Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (>10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.

Controlled Growth of Semiconductor Alloy/Ferromagnetic Insulator (GeBi/Bi:Thulium Iron Garnet (TmIG)) Spin Heterojunction and Development of Quantum Logic Device

Replacing heavy metal and heavy metal alloy films with a semiconductor thin film, to form a semiconductor/ferromagnetic insulator spin heterojunction has always been an international research hotspot. This article reports on a Ge1–xBix/Bi:thulium iron garnet (TmIG) spin heterojunction. It was found that Ge1–xBix (x = 0.06–0.22) semiconductor alloy films and Bi3+-doped control Tm3–yBiyFe4.3Ga0.7O12 (Bi:TmIG, y = 0.2–1.0) films can enhance the spin–orbit coupling (SOC) strength, improving the abnormal spin Hall effect (ASHE) and the spin Hall magnetoresistance (RH) switch characteristics. As x varies from 0.06 to 0.22, it is noticed that the spin mixing conductance considerably increases. Because Bi ions have the ability to control the SOC strength, the 5–10 nm GeBi semiconductor thin film with the Bi-ion-doped Bi:TmIG film can realize a spin magnetic moment reversal and then drive the heterojunction magnetic moment switching effect, and the spin currents injected across this interface lead to deterministic magnetization reversal at an ultralow current density of 1.82 × 106 mA/cm2. This has significant practical applications in the design and implementation of spin quantum logic devices based on semiconductor processes, laying a material foundation for the development of quantum logic devices.

Efficient, Ambient‐Stable, All‐Polymer Organic Photodetector for Machine Learning‐Promoted Intelligent Monitoring of Indoor Plant Growth

AbstractThe blend ratio and thickness of the PM6:PY‐IT active layer are optimized to realize highly efficient all‐polymer organic photodetectors (OPDs). Ultralow dark current densities of less than 5.92 × 10−10A cm−2(at −1 V) appear when the PM6:PY‐IT active layers have thicknesses in the range of 250–400 nm and blend ratios between 1:1 and 1:1.4, suggesting a wide fabrication window. Fast rise/fall times of 560/250 ns are measured with a cut‐off frequency of 530 kHz for the OPD incorporating a 250‐nm‐thick 1:1 blend. This OPD provides superior performance, with a high detectivity of 2.98 × 1013Jones and a wide linear dynamic range of 138 dB (at 530 nm (−1 V)). In addition, the ultralow dark current of the OPD retains excellent long‐term stability over 500 h of aging testing (thermal stress, ambient conditions, and continuous illumination). With the integration of specific light filters, a system is realized for the efficient detection of indoor plant‐growth lighting, allowing the rapid and accurate detection (>97%) of photosynthetic photon flux at various wavelengths of light that directly determine the photosynthesis and photomorphogenesis of indoor plants, supervised by machine learning. The artificial intelligence‐trained OPD effectively improves detection accuracy.

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3

AbstractReducing the leakage current through the gate oxide is becoming increasingly important for power consumption reduction as well as reliability in integrated circuits as the semiconducting devices continue to scale down. Here, this work reports on the high‐k dielectric SrHfO3(SHO) based devices with ultralow leakage current density via pulsed laser deposition (PLD). The ultralow current density is achieved by optimizing the growth conditions and the associated structural properties. In the optimized conditions, the dielectric properties of the 50‐nm‐thick SHO capacitors are measured: high dielectric constant (κ = 32), low leakage current density (<10−8A cm−2at 2 MV cm−1), and large breakdown field (EBD > 4 MV cm−1). The surprisingly low leakage current density of SHO is ascribed to the large bandgap (≈6 eV), the large conduction band offset (CB offset > 3 eV) with respect to the semiconductor, and the low density of defect states inside the bandgap. The optimized SHO dielectric with high dielectric constant and ultralow leakage current density is proposed for future low‐power consumption devices based on Si as well as perovskite oxide semiconductors.

Ultralow-current density spin-torque diodes with high sensitivity

Spin-torque diodes (STDs) offer the possibility of using spin torque to generate rectification voltage with promising applications in microwave detecting, energy harvesting, and neuromorphic computing. Here, we demonstrate a highly sensitive STD with ultralow current density based on a magnetic tunnel junction with perpendicular magnetic anisotropy. At zero magnetic field, a high sensitivity exceeding 3785 V/W is obtained with a low current of −20 μA, corresponding to a current density of ∼105 A/cm2, which is one order lower than the previously reported. When a weak external magnetic field is applied, the sensitivity can be further increased by five times to 20 000 V/W. Furthermore, we construct an artificial neural network with STD neurons to perform recognition of handwritten digits in the Mixed National Institute of Standards and Technology database, where a produced accuracy of up to 94.92% is obtained. Our work provides a route to develop low-power consumption high-sensitivity STDs for Internet of Things applications and neuromorphic computing.

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications.

In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was proposed. After thermal treatment of molecular-beam-epitaxy-grown GeSn, self-assembled Sn nanodots (NDs) were formed on surface and the spontaneous emission from GeSn direct band was enhanced by ∼5-fold. Employing the self-assembled Sn NDs as template, vertical GeSn NWs with a diameter of 25 ± 6nm and a density of 2.8 × 109cm-2 were obtained by Cl-based ICP dry etching technique. A prototype GeSn NW photodetector (PD) with rapid switching ability was demonstrated and the optoelectronic performance of Ge NW PD was systematically studied. The GeSn NW PD exhibited an ultralow dark current density of ∼33 nA/cm2 with a responsivity of 0.245 A/W and a high specific detectivity of 2.40 × 1012cmHz1/2W-1 at 1550nm under -1V at 77K. The results prove that this method is prospective for low-cost and scalable fabrication of GeSn NWs, which are promising for near infrared or short wavelength infrared nanophotonic devices.

Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature

Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle θSH and high thermal stability. However, high-quality YPtBi thin films with low bulk carrier density are usually grown at 600 °C, which exceeds the limitation of 400 °C for back end of line (BEOL) process. Here, we investigate the crystallinity and spin Hall effect of YPtBi thin films grown at lower growth temperature down to 300 °C. Although both effective spin Hall angle and spin Hall conductivity degraded with lowering the growth temperature to 300 °C due to degradation of the interfacial spin transparency, they were recovered by reducing the sputtering Ar gas pressure. We achieved a giant θSH up to 7.8 and demonstrated efficient spin–orbit torque magnetization switching by ultralow current density of ∼105 A/cm2 in YPtBi grown at 300 °C with the Ar gas pressure of 1 Pa. Our results provide the recipe to achieve giant θSH in YPtBi grown at lower growth temperature suitable for BEOL process.

Bio-inspired self-healing MXene/polyurethane coating with superior active/passive anticorrosion performance for Mg alloy

The presence of micropores/cracks and the poor self-healing performance cause the organic coating to degrade its protective ability during long-term corrosion. In this work, a bio-inspired anticorrosion coating has been successfully fabricated on Mg alloy, which exhibits superior active/passive corrosion protection and self-healing performance. The polyurethane (PU) with synergistic effect derived from disulfide bond and hydrogen bond can self-repair at ambient temperature. The methionine functionalized Ti3C2 MXene (f-MXene) can form hydrogen bonds with self-healing PU matrix and remarkably improve the active/passive anticorrosion properties, which can be ascribed to the corrosion inhibition and labyrinth effect. Based on the electrochemical tests, the f-MXene doped PU (f-MXene@PU) coating displays excellent anticorrosion performance with an ultra-low current density value of 5.107 × 10-11 A cm−2. Besides, the f-MXene@PU coating possesses a remarkable anticorrosion self-healing efficiency of 140 %, as compared to the as-reported traditional intrinsic self-healing polymers with a maximum repair efficiency of 100 %. Combining with the triple effects of active (inhibiting effect) and passive (barrier performance) anticorrosion and self-healing functions, it can provide a green and facile synthesis strategy for constructing self-healing coating with the excellent anticorrosion properties.