Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Abstract

Multispectral photodetectors (PDs) operating in visible (VIS) to shortwave infrared (SWIR) wavelength ranges are highly desired for various civil and military applications. Traditional vertical p-i-n SWIR PDs lack the detection ability for VIS light due to photon dissipation in the neutral regions. Herein, an i-n type PD was proposed and demonstrated with sputtering-grown undoped Ge0.92Sn0.08/Ge multiple quantum wells (MQWs) on n-Ge substrate to realize VIS/SWIR dual-band detection from 400 to 2000 nm. Three response peaks resulted from the resonate cavity effect at 430, 660 and 1530 nm, respectively, were observed. Benefiting from the defect-free coherent GeSn/Ge MQWs and low-temperature surface plasma treatment, a remarkably low bulk leakage current density of 5.9 mA/cm2 and a low surface leakage current of 37.5 μA/cm were achieved at room temperature under −1 V, resulting in an ultralow dark current density of 13.36 mA/cm2 for a 200-μm-diameter PD. Temperature-dependent electrical characterizations revealed that the dark current was ideally dominated by carrier diffusion mechanism. Eminent detectivities of 5.2 × 108, 7.1 × 108 and 5.6 × 109 Jones at 410, 660 and 1530 nm, respectively, under −1 V were achieved simultaneously at room temperature. This work provides a path way for fabricating low-cost, VIS/SWIR dual-band PDs with complementary metal–oxide–semiconductor (CMOS) compatible technology.