Typical Semiconductor Material Research Articles

Synthesis, crystal structure, Hirshfeld surface analyses and antibacterial activity of 2-fluorobenzylpyridinium tetrabromidocuprate(II)

In this article, novel organic-inorganic hybrid material, 2-fluorobenzylpyridinium tetrabromidocuprate(II) [2FBzPy]2[CuBr4], has been obtained by using a slow evaporation solution-growth method and was characterized by powder X-ray diffraction, infrared spectroscopy, scanning electron microscopy, UV–visible diffuse reflectance spectrum. The compound crystallizes in the monoclinic space group P21 /c, and the packing is governed by C − H···Br hydrogen bonding interactions, which was confirmed by the Hirshfeld surface analysis. The results of antimicrobial experiments showed that the compound possessed excellent antimicrobial activity against Staphylococcus aureus and Escherichia coli. RESEARCH HIGHLIGHTS An inorganic-organic hybrid salt [2FBzPy]2[CuBr4] was synthesized and characterized. The main intermolecular interaction in [2FBzPy]2[CuBr4] crystals have been studied and analyzed. The interactions between different molecules in[2FBzPy]2 [CuBr4] were examined by Hirshfeld surface analyses. [2FBzPy]2[CuBr4] had an optical band gap of 1.69 eV, was a typical semiconductor material with good optical property. The as-synthesized salts exhibits good antibacterial activities against S. aureus and E. coli.

Photocatalytic Degradation of Sulfamethoxazole by Cd/Er-Doped Bi2MoO6

Bi2MoO6 (BMO) is a typical bismuth-based semiconductor material, and its unique Aurivillius structure provides a broad space for electron delocalization. In this study, a new type of bismuth molybdate Cd/Er-BMO photocatalytic material was prepared by co-doping Er3+ and Cd2+, and the performance of the photocatalytic degradation of sulfamethoxazole (SMZ) was systematically studied. The research results showed that the efficiency of SMZ degradation by Cd/Er-BMO was significantly improved after doping Er3+ and Cd2+ ions, reflecting the synergistic catalytic effect of Cd2+ and Er3+ co-doping. Cd/Er-BMO doped with 6% Cd had the highest degradation efficiency (93.89%) of SMZ under visible light irradiation. The material revealed excellent stability and reusability in repeated degradation experiments. In addition, 6% Cd/Er-BMO had a smaller particle size and a larger specific surface area, which is conducive to improving the generation efficiency of its photogenerated electron-hole pairs and reducing the recombination rate, significantly enhancing the photocatalysis of the material. This study not only provides an effective photocatalyst for degrading environmental pollutants such as SMZ, but also provides an important scientific basis and new ideas for the future development of efficient and stable photocatalytic materials.

Principles, fabrication, and applications of halide perovskites‐based memristors

AbstractIn recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in‐memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs‐based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs‐based memristors are discussed. Finally, the research status and development prospects of HPs‐based memristors are outlined.

Preparation and Mechanism Analysis of High-Performance Humidity Sensor Based on Eu-Doped TiO2.

TiO2 is a typical semiconductor material, and it has attracted much attention in the field of humidity sensors. Doping is an efficient way to enhance the humidity response of TiO2. Eu-doped TiO2 material was investigated in both theoretical simulations and experiments. In a simulation based on density functional theory, a doped Eu atom can increase the performance of humidity sensors by producing more oxygen vacancies than undoped TiO2. In these experiments, Eu-doped TiO2 nanorods were prepared by hydrothermal synthesis, and the results also confirm the theoretical prediction. When the doping mole ratio is 5 mol%, the response of the humidity sensor reaches 23,997.0, the wet hysteresis is 2.3% and the response/recovery time is 3/13.1 s. This study not only improves the basis for preparation of high-performance TiO2 humidity sensors, but also fills the research gap on rare earth Eu-doped TiO2 as a humidity-sensitive material.

Preparation of MoS2/CdS/TNAs ternary composite structures and study of their photocatalytic properties

TiO2 has long been favored by researchers as a representative of semiconductor photocatalysts. Titanium dioxide nanotubes (TNAs) have a larger specific surface area, which makes them more valuable for the design of photocatalyst carriers. CdS is also a typical photocatalytic semiconductor material with a narrow bandwidth, which has a better performance in the visible light region. However, it also has certain problems such as photocorrosion. The composite MoS2 has a better inhibition effect. In this study, MoS2 and CdS were composited on TNAs using electrochemical deposition for the first time, and MoS2/CdS/TNAs (MCT) ternary composite nanostructures were successfully prepared. The effects of electrochemical deposition voltage, reaction time, and the ratios of molybdenum and sulfur sources in the electrolyte on the MCT composite structures were investigated. In this work, the photocatalytic degradation of organic water pollutants was simulated using methylene blue, and the degradation rate reached 93.1% at 150 min. After cycling the degradation experiments for five times, the photocatalysts still had good stability. The results showed that the MCT has good photocatalytic activity, which provides a feasible way for TNAs in the design of photocatalyst carriers.

Super-Suppression of Long-Wavelength Phonons in Constricted Nanoporous Geometries.

In a typical semiconductor material, the majority of the heat is carried by long-wavelength, long-mean-free-path phonons. Nanostructuring strategies to reduce thermal conductivity, a promising direction in the field of thermoelectrics, place scattering centers of size and spatial separation comparable to the mean free paths of the dominant phonons to selectively scatter them. The resultant thermal conductivity is in most cases well predicted using Matthiessen's rule. In general, however, long-wavelength phonons are not as effectively scattered as the rest of the phonon spectrum. In this work, using large-scale molecular-dynamics simulations, non-equilibrium Green's function simulations, and Monte Carlo simulations, we show that specific nanoporous geometries that create narrow constrictions in the passage of phonons lead to anticorrelated heat currents in the phonon spectrum. This effect results in super-suppression of long-wavelength phonons due to heat trapping and reductions in the thermal conductivity to values well below those predicted by Matthiessen's rule.

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Pressure‐Induced Enhancement of Photoluminescence and Photocurrent in Organic Semiconductor Rubrene

AbstractAs a typical organic semiconductor material, rubrene plays a prominent role in the field of optoelectronic devices. Here, a notable photoluminescence (PL) and photocurrent enhancement of rubrene by 8‐ and 2.5‐fold is reported under compression, respectively. The shortening of the π−π stacking distance and the twisting of the lateral phenyl are crucial reasons for the decrease in the bandgap, resulting in the enhancement of PL emission and photocurrent. Pressure can effectively suppress the excitons transition from a free exciton state to a self‐trapped exciton state and improve the emission efficiency. The photocurrent is subject to dual regulation by bandgap and resistance. Interestingly, rubrene undergoes an electronic structure transition at about 4.8 GPa, which is responsible for the weakening of PL emission and photocurrent. This work provides a strategy for optimizing the performance of rubrene‐based optoelectronic devices and designing novel optoelectronic materials.

Growth of Bi<sub>2</sub>O<sub>2</sub>Se nanowires and their superconducting quantum interference devices

Bi<sub>2</sub>O<sub>2</sub>Se is a new type of semiconductor material, which has the advantages of high carrier mobility, air stability, strong spin-orbit coupling, etc. It has a variety of synthesis methods and a wide range of applications. In the past few years, many explorations have been made in the synthesis, large-size growth, and applications of Bi<sub>2</sub>O<sub>2</sub>Se. It has been applied to field effect transistors, infrared photodetectors, semiconductor devices, heterojunctions, spin electronics, etc. Since nanowire has a larger surface area-to-volume ratio than nano-film, nanowire may have greater advantages in gate regulation and strong spin-orbit coupling, and these properties can play a crucial role in certain fields. However, most of the studies focused on its two-dimensional films, and there are less researches of its one-dimensional counterpart. In this work, a method of growing Bi<sub>2</sub>O<sub>2</sub>Se one-dimensional nanowires by chemical vapor deposition in a three-temperature-zone tubular furnace is introduced. High-quality suspended Bi<sub>2</sub>O<sub>2</sub>Se nanowires are obtained. In addition, the effects on the Bi<sub>2</sub>O<sub>2</sub>Se nanowire growth of the position of the mica substrates, i.e, different horizontal positions and vertical heights in the quartz boat, are studied, and the optimal conditions for the growth are summarized. The nanowires are characterized by atomic force microscope and energy dispersive spectrometer to show the information about the size and component. Then, superconducting quantum interference device based on the Bi<sub>2</sub>O<sub>2</sub>Se nanowires is constructed, and the superconducting quantum interference in a magnetic field is observed, which provides a way to broaden the application of Bi<sub>2</sub>O<sub>2</sub>Se nanowires.

SCAPS Numerical Analysis of Graphene Oxide /TiO2 Bulk Heterojunction Solar Cell Sensitized byN719 Ruthenium Dye

Solid-state dye-sensitized solar cells (SSDSC) have been fabricated using two different metal oxide materials, graphene oxide and titanium oxide, are used as hole and electron transport materials, respectively. The N719 dye ruthenium between the hole and electron transport materials to act as an absorber layer in your Go/N719dye/TiO2 solar cells. Through the SCAPS-1D simulation, it was found that the Go/N719dye/TiO2 solar cells have significantly improved the performance of the solar cells compared to the Go/TiO2 solar cells. Specifically, the short circuit current (Jsc) has increased from 0.17 mA/cm2 to 1 mA/cm2, the open circuit voltage (Voc) has increased from 0.2 V to 1 V, and the power conversion efficiency (η) has increased from 0.02% to 2.5%. Additionally, Various factors that can affect the performance of Go/N719 dye/TiO2 solar cells. It was found that the optimal dye thickness for achieving high short circuit current density, high power conversion efficiency, and high open circuit voltage is between 200nm and 300nm. Furthermore, the operating temperature of the solar cells also affects their performance. Increasing the operating temperature negatively affects the open circuit voltage and power conversion efficiency of the cells, while the short circuit current density is slightly enhanced. Finally, the efficiency of a solar cell can be affected by the type of metal used for the electrode and the type of semiconductor material used in the cell. In Ni and Cu electrodes solar cells ohmic contacts allow for efficient transfer of electrons, whereas Schottky barriers can impede electron flow and reduce efficiency in Mo and Ag electrodes solar cells .

Infrared HOT Photodetectors: Status and Outlook.

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Construction of Core-shell Sb2 s3 @Cds Nanorod with Enhanced Heterointerface Interaction for Chromium-Containing Wastewater Treatment.

How to collaboratively reduce Cr(VI) and break Cr(III) complexes is a technical challenge to solve chromium-containing wastewater (CCW) pollution. Solar photovoltaic (SPV) technology based on semiconductor materials is a potential strategy to solve this issue. Sb2 S3 is a typical semiconductor material with total visible-light harvesting capacity, but its large-sized structure highly aggravates disordered photoexciton migration, accelerating the recombination kinetics and resulting low-efficient photon utilization. Herein, the uniform mesoporous CdS shell is in situ formed on the surface of Sb2 S3 nanorods (NRs) to construct the core-shell Sb2 S3 @CdS heterojunction with high BET surface area and excellent near-infrared light harvesting capacity via a surface cationic displacement strategy, and density functional theory thermodynamically explains the breaking of SbS bonds and formation of CdS bonds according to the bond energy calculation. The SbSCd bonding interaction and van der Waals force significantly enhance the stability and synergy of Sb2 S3 /CdS heterointerface throughout the entire surface of Sb2 S3 NRs, promoting the Sb2 S3 -to-CdS electron transfer due to the formation of built-in electric field. Therefore, the optimized Sb2 S3 @CdS catalyst achieves highly enhanced simulated sunlight-driven Cr(VI) reduction (0.154 min-1 ) and decomplexation of complexed Cr(III) in weakly acidic condition, resulting effective CCW treatment under co-action of photoexcited electrons and active radicals. This study provides a high-performance heterostructured catalyst for effective CCW treatment by SPV technology.

Preparation of Novel Heterodimensional Structured Chalcogenide Semiconductor Nano‐Film by Pulsed Laser Deposition Technology

AbstractChalcogenide based nano‐films have attracted considerable attention as a new type of semiconductor material in the fields of optical waveguides, laser devices, and solar cells. However, it remains challenging to use them effectively in a variety of fields, mainly due to their intricate fabrication procedures and limited electrical characteristics. In this study, zinc selenide (ZnSe) is doped with molybdenum (Mo) and gallium (Ga). The heterodimensional structured chalcogenide semiconductor nano‐film is obtained by pulsed laser deposition (PLD). The results of scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) confirm that the structure of the nano‐film is compact and the composition is uniformly distributed. The transmittance of all samples is close to 100% in the 400–2000 nm range shown. The P/N type of the film can be controlled by changing the preparation conditions. All the results indicate that the novel heterodimensional structured chalcogenide semiconductor nano‐film in this study has a simple and efficient preparation method, controllable composition, and unique optical/electrical properties. These properties can be used in integrated circuits and photovoltaic power generation.

Application and enhancement effect of nano-ZnO film preparation technology in the protection of paper artwork

Nano-ZnO has the characteristics of photocatalytic performance and excellent transparency and conductivity. Because of its many excellent properties, it also occupies a very important position in the types of semiconductor materials. Nano-ZnO film preparation technology has been researched and developed and applied in many fields, but there are few applied researches on the protection of paper artworks. The main content of this article is the study of the application and enhancement effect of nano-ZnO film preparation technology on the protection of paper cultural relics. In this paper, the sol-gel process is selected in the common film preparation process, and the configured sol is dipped and lifted. By comparing the paper covered with nano ZnO film and the paper not covered with nano ZnO film in the anti-aging performance test, anti-ultraviolet aging performance test, aging appearance change and the experimental results of the mechanical performance test of the application effect of different papers, the results are investigated. The application and enhancement effect of nano-ZnO film preparation technology in the protection of paper art works. Experimental studies have shown that under the same aging time, the mechanical properties of rice paper covered with nano-Zno film are higher than those of blank rice paper without nano-Zno film. The transverse tensile strength of the paper is increased by 5.88 m/N, an increase of 98%. The vertical tensile strength increased by 3.93 m/N, an increase of about 87%, the vertical folding resistance increased by 16 times, the horizontal folding resistance increased by 15 times, and the vertical tearing strength increased by 4.15 m/N, an increase of about 125%, and the transverse tearing degree is enhanced by 2.21 m/N, which is about 64%. The two kinds of rice paper were subjected to warm-heat aging, and the final results showed that the mechanical properties of the two kinds of rice papers showed a decreasing trend, but the mechanical properties of the rice paper covered by the nano-Zno film decreased at a slower rate, and the final mechanical properties were also lower than that of untreated rice paper. Blank rice paper covered with film is better. The experimental results of ultraviolet light on paper aging show that the nano-Zno film covering the paper will delay the paper aging, and the appearance of the nano-Zno film after ultraviolet light does not change significantly. Under the mechanical performance test of nano Zno film on different types of paper application, the tensile strength, folding resistance and tearing degree of the three papers participating in the experiment have been improved, which shows that the nano Zno film has the advantage of strengthening paper.

First-principles study of electronic, mechanical and piezoelectric properties of Janus MoSH

ABSTRACT Janus transition metal dichalcogenides (TMDCs) type two-dimensional materials have been widely studied because of their unique asymmetrical structures and properties. In the preparation of Janus TMDCs, replacing the top layer S atoms of MoS2 with H atoms could yield unique Janus MoSH, which has been scarcely reported. In this work, the electronic, mechanical and piezoelectric properties of Janus MoSH are systematically studied using first principles calculations for the first time. The band structure of Janus MoSH is of metallic nature with two bands crossing the Fermi level. This material has a stable structure, and the Poison ratio ν > 1/3 indicates the good ductility. The relatively higher piezoelectric coefficients, e11 of −4.27 × 10−10 C/m and d11 of −5.09 pm/V for Janus MoSH, compared with the typical piezoelectric semiconductor materials MoS2 (3.64 × 10−10 C/m and 3.73 pm/V, respectively) may reflect suitable piezoelectric effect in the former. The above calculations may show that Janus MoSH would be potentially adopted as efficient sensors and piezoelectric components.

Karakteristik Struktur Kristal In2Se3 Hasil Preparasi Dengan Metode Bridgman

Apart from using silicon material, thin-layer solar cells can be made from various types of semiconductor materials, such as a combination of groups III and VI. In solar cell applications, these materials are usually used as n-type coatings. This study not only aimed to determine the crystal structure and the effect of annealing temperature on the crystal lattice parameters but also to determine the chemical composition and surface morphological structure of the crystals formed from the preparation. The crystal growth process was carried out using the Bridgman method with different heating patterns. The temperature in both annealing temperatures is 200oC and 250oC. The physical properties of the prepared In2Se3 crystals were characterized using XRD, SEM, and EDAX. XRD Characterization was used to determine the crystal structure, while SEM and EDAX characterization was used to determine the surface morphology and chemical composition of the crystals. The result of the XRD characterization showed that the formed In2Se3 crystals were polycrystals with a hexagonal structure. Based on the diffractogram obtained, the In2Se3 crystalline heating 1 has better quality. EDAX analysis showed that the In2Se3 crystals were composed of elements of In and Se with a mole ratio of 2:9, while the SEM characterization showed that the color of the surface morphology of the In2Se3 crystals was not homogeneous.

Flexible Electronics Based on Organic Semiconductors: from Patterned Assembly to Integrated Applications.

Organic flexible electronic devices are at the forefront of the electronics as they possess the potential to bring about a major lifestyle revolution owing to outstanding properties of organic semiconductors, including solution processability, lightweight and flexibility. For the integration of organic flexible electronics, the precise patterning and ordered assembly of organic semiconductors have attracted wide attention and gained rapid developments, which not only reduces the charge crosstalk between adjacent devices, but also enhances device uniformity and reproducibility. This review focuses on recent advances in the design, patterned assembly of organic semiconductors, and flexible electronic devices, especially for flexible organic field-effect transistors (FOFETs) and their multifunctional applications. First, typical organic semiconductor materials and material design methods are introduced. Based on these organic materials with not only superior mechanical properties but also high carrier mobility, patterned assembly strategies on flexible substrates, including one-step and two-step approaches are discussed. Advanced applications of flexible electronic devices based on organic semiconductor patterns are then highlighted. Finally, future challenges and possible directions in the field to motivate the development of the next generation of flexible electronics are proposed.

Simulation and experimental study on limited cutting and heat effect of silicon carbide

As a typical third-generation semiconductor material, silicon carbide (SiC) presents outstanding properties in terms of the bandgap width, disruptive voltage strength, thermal conductivity and so on. However, there are still technical difficulties in acquiring the nondestructive surface with an optical quality, which seriously constrained the application and development of SiC functional devices. Therefore, in this paper, the material removal mechanism of SiC was firstly investigated according to the MD simulation results. Then, nanocutting experiments were conducted under the vacuum environment of the scanning electron microscope, where the transient behavior of material removal could be observed online with a high resolution, so that the simulation results can be effectively verified. From the simulated and experimental results, it was found that under the research range of parameters, the limited removal thickness (LRT) of SiC decreased with an increase in cutting speed, while the cutting depth had little effect on the LRT. Besides, the polycrystalline SiC presented a smaller LRT compared with the monocrystalline SiC. Therefore, it was advantageous to enhance the machined surface quality and improve the surface integrity with regard to polycrystalline SiC. The cutting temperature increased with an increase in cutting speed during the nanocutting, and a higher cutting speed can prolong the time for the workpiece temperature to stabilize. The findings of this study are able to provide a theoretical basis for the improvement of ultraprecision machining technology especially for hard–brittle and hard-to-process materials. • Material removal mechanism was studied both experimentally and numerically. • Limited removal thickness was studied by labeling and tracing the silicon atoms. • Nanocutting tests were performed with online observation via an SEM. • Experimental results are in good agreement with the MD simulation results.

Thermoelastic damping and frequency shift in micro/nano-ring resonators considering the nonlocal single-phase-lag effect in the thermal field

• Two generalized models of thermoelastic damping (TED) in micro/nano-rings are derived. • Temperature varies with the nonlocal single-phase-lag (SPL) effect of heat conduction. • Frequency-shift ratio for micro/nano-rings under the nonlocal-SPL effect is investigated • TED at high frequencies is affected by the nonlocal-SPL effect. • Equivalent relaxation times for rings under the nonlocal-SPL effect are discussed. Estimating thermoelastic damping (TED) and frequency shift with sufficient accuracy is of importance for the quality factor prediction of micro/nano-resonators operating in certain special cases containing the ultra-high frequency excitation and the ultra-instantaneous thermal heating etc. At the design stage before the engineering application of micro/nano-resonators, the mathematical modelling of the frequency-shift ratio and TED gets challenging when considering the non-Fourier effect and size-dependent effect in the thermal field. In this paper, one/two-dimensional (1D/2D) analytical formulations of frequency-shift ratio and TED for micro/nano-ring resonators are firstly developed by adopting the nonlocal single-phase-lag (SPL) model. Basing on the present proposed models, the nonlocal thermal-relaxation time τ N is firstly introduced in terms of the nonlocal thermal-length l Q and the thermal diffusion coefficient χ . In simulation cases, the typical semiconductor material silicon is selected, the SPL time τ Q is computed basing on the second sound, and l Q refers to the mean-free path of energy carriers. The convergence performance of the proposed models is analyzed. Meanwhile, the results of existed TED models for rings are presented for comparison. The impacts of the nonlocal-SPL effect on the TED spectrum and fluctuation temperature are examined emphatically. And the peak phenomenon of TED spectrum characterized by the peak damping, the equivalent relaxation time associated with the peak frequency, and the frequency-shift ratio are explored. Results demonstrate that the thermo-dynamical behaviors of micro/nano-ring resonators are conjunctively determined by the amount relationship of τ Q , τ N , and the thermal relaxation time. Especially, when the radial thickness of the ring operating at ultra-high frequencies is comparable to l Q , the nonlocal-SPL effect of heat conduction should be considered to estimate the frequency-shift ratio and TED.

A Review On Chemical Bath Deposition Mediated Synthesis Of Binary/Ternary Photoconductive Metal Sulfide Thin Films

Photoconductors are normally composed of semiconductors, which show an enhancement in the electrical conductivity due to the absorption of photons. Among the binary compounds PbS, ZnS, and CdS are the most typical inorganic semiconductor materials owing to their band structure. The properties of Zn1-xCdxS thin films lie in between the properties of ZnS and CdS, widely used as a wide band gap window material in heterojunction photovoltaic solar cells and in photoconductive device. Some ternary compounds based on CdS and PbS has been formed such as PbS with some percentage of Cd(CdxPb1-XS), and it has been observed by optical measurement that that the band gap value of this ternary compounds varies with x. In this review paper, we will emphasis the fabrication of thin film of binary and ternary metal-sulphide compounds by chemical bath deposition method.