Abstract
AbstractChalcogenide based nano‐films have attracted considerable attention as a new type of semiconductor material in the fields of optical waveguides, laser devices, and solar cells. However, it remains challenging to use them effectively in a variety of fields, mainly due to their intricate fabrication procedures and limited electrical characteristics. In this study, zinc selenide (ZnSe) is doped with molybdenum (Mo) and gallium (Ga). The heterodimensional structured chalcogenide semiconductor nano‐film is obtained by pulsed laser deposition (PLD). The results of scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) confirm that the structure of the nano‐film is compact and the composition is uniformly distributed. The transmittance of all samples is close to 100% in the 400–2000 nm range shown. The P/N type of the film can be controlled by changing the preparation conditions. All the results indicate that the novel heterodimensional structured chalcogenide semiconductor nano‐film in this study has a simple and efficient preparation method, controllable composition, and unique optical/electrical properties. These properties can be used in integrated circuits and photovoltaic power generation.
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