Types Of Light-emitting Diodes Research Articles

Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the increasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED

This paper describes the fabrication of a waveguide and the analysis of its polarization characteristics by applying light-emitting diode (LED) pumping lights to its surface. By using double tubed coaxial line (DTCL) microwave plasma chemical vapor deposition (MPCVD) equipment, an a-Si:H/SiN multilayer waveguide was fabricated whose thickness could be controlled at nanometer order. The main structural material of the waveguide sample consisted of a combination of layers of amorphous silicon hydrogen and silicon nitrate. Once the sample was ready, another major objective of the experiment was to analyze the polarization characteristics of the fabricated waveguide. The idea of the experiment was to analyze how the waveguide reacts when three types of LED (blue, yellow, and red) are radiated onto its surface. The results showed that the fabrication of the a-Si:H/SiN sample is successful. Most effective transmission results, which accord with the polarization characteristics analysis, were obtained.

Impact of LED Nonlinearity on Discrete Multitone Modulation

In the context of communications based on light-emitting diodes (LEDs), spectrally efficient modulation has been considered for overcoming their limited bandwidth, and one scheme under investigation is quadrature-amplitude modulation on discrete multitones. The dependence of the output optical power on the driving current of practical LEDs is nonlinear, which distorts the transmitted signal. We investigate the impact of the nonlinear LED transfer function, i.e., the dependence of the emitted optical power on the driving current, on discrete multitone modulation. The effect incurred by this distortion was analyzed by using detailed numerical simulations addressing the impact of clipping, individual subcarriers, signal-to-noise ratio, and bit-error ratio. The approach was generalized to describe the impact of the nonlinearity of arbitrary LEDs and laser diodes, resulting in a powerful tool for assessing the impact of the nonlinearity on the link performance. This approach was applied to three types of LED, showing anything from a minuscule effect to the case in which error-free data transmission is made impossible by the transfer-function nonlinearity.

Analysis of the far-field region of LEDs

Versatility in the design of optical systems is one of the key features of light-emitting diodes (LEDs) that has attracted considerable attention. In the analysis of systems using LEDs, it is useful to know if the distance is far enough from the LED to allow the radiation pattern to be simulated by the point source approach. We propose three far-zone conditions for LED light modeling: the far-field distance, and for practical purposes the quasi far-field and minimum far-field distances. Different types of LEDs have different far-field ranges. We analyze these differences by modulating key parameters like geometrical structure of encapsulating lens, chip size, chip shape, chip position, and package errors. We find that far-field region considerably depends more on the shape of both lens and chip than all other parameters.

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

We report the electrical characteristics of vertical and lateral type light emitting diodes (LEDs) grown with CrN buffer layer. The LED with CrN buffer showed lower reverse leakage current than the reference sample grown with conventional low-temperature GaN buffer. It was also observed that the density of open core screw dislocation was smaller by one order of magnitude, which was thought to relate to the leakage current of devices. The vertical type LED fabricated by chemical etching of CrN buffer showed lower series resistance, lower turn-on voltage, and larger light output power than those of the conventional LEDs.

Generation of propagation-invariant light beams from semiconductor light sources

We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures

A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength λ = 1.95 μm, has been suggested and its electrical and luminescent characteristics have been studied. It is shown that the effective radiative recombination in the thyristor structure in the n-type GaInAsSb active region is provided by double-sided injection of holes from the neighboring p-type regions. The maximum internal quantum efficiency of 77% was achieved in the structure under study in the pulsed mode. The average optical power was as high as 2.5 mW, and the peak power in the pulsed mode was 71 mW, which exceeded by a factor of 2.9 the power obtained with a standard n-GaSb/n-GaInAsSb/P-AlGaAsSb LED operating in the same spectral range. The approach suggested will make it possible to improve LED parameters in the entire mid-IR spectral range (2–5 μm).

Mega‐cone blue LEDs based on ZnO/GaN direct wafer bonding

AbstractWe demonstrate the fabrication of hexagonal pyramid shaped light‐emitting diodes (LEDs), “mega‐cone” LEDs based on ZnO/GaN wafer bonding. Compared with a conventional type LEDs with thin Ni/Au p‐type electrode, external quantum efficiency was 3.1 times higher at 20 mA of current injection condition. We also report on the structural, optical, and electrical characteristics of the mega‐cone LED. The results here indicate the high potential of these mega‐cone LEDs for light sources. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Dot-pattern design of a light guide in an edge-lit backlight using a regional partition approach

This paper employs a regional partition approach to establish the optimal distribution of the diffuser dots in the light guide of an edge-lit backlight. The proposed approach commences by dividing the light guide into a number of partitions and assigning an equal radius to every dot. An iterative optimization procedure is then performed in which the illuminance in each partition is calculated and the dot radius in each partition progressively adjusted until uniform luminance is obtained over the entire light-guide surface. To simplify the geometry construction process and improve the efficiency of the optimization procedure, a simple optical model is proposed for the diffuser dots and the bare surface of the light guide, and an analytical procedure is implemented to take account of the diffuser-film and brightness-enhancement-film effects. The simulation results confirm the ability of the proposed approach to accurately reflect the fine regulation of the dot radius required to obtain uniform luminance for typical light-emitting diode configurations used in practical backlight modules.

Simple experimental verification of the relation between the band-gap energy and the energy of photons emitted by LEDs

The wavelength of the light emitted by a light-emitting diode (LED) is intimately related to the band-gap energy of the semiconductor from which the LED is made. We experimentally estimate the band-gap energies of several types of LEDs, and compare them with the energies of the emitted light, which ranges from infrared to white. In spite of essential simplifications of the theoretical model involved in the adopted experimental procedure, the relation between the band gap energy and the wavelength of the emitted light is clearly demonstrated. The experiment is easily carried out, and no sophisticated equipment is needed.

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate

Light extraction analysis of GaN-based light-emitting diodes (LEDs) with Monte Carlo ray tracing is presented. To obtain high light extraction efficiency, periodic structures introduced on the top surface and/or on the substrate of various types of LED are simulated, including wire bonding, flip chip and Thin GaN. Micro pyramid array with an apex angle from 20o to 70o is shown to effectively improve the light extraction efficiency. In addition, for an LED encapsulated within an epoxy lens, the patterned substrate with pyramid array is found to be a more effective way to increase light extraction efficiency than the surface texture.

OPTIMIZATION OF LIGHTING SPECTRUM FOR PHOTOSYNTHETIC SYSTEM AND PRODUCTIVITY OF LETTUCE BY USING LIGHT-EMITTING DIODES

OPTIMIZATION OF LIGHTING SPECTRUM FOR PHOTOSYNTHETIC SYSTEM AND PRODUCTIVITY OF LETTUCE BY USING LIGHT-EMITTING DIODES

Organic electroluminescent derivatives containing dibenzothiophene and diarylamine segments

A new series of 2,8-disubstituted dibenzothiophenes have been successfully synthesized via palladium-catalyzed C–N or C–C bond formation using 2,8-dibromodibenzothiophene and diarylamines as starting materials. These new dibenzothiophene derivatives are amorphous with a glass transition temperature ranging from 86 to 190 °C. Furthermore, they are fluorescent in the blue to bluish green region. Two types of light-emitting diodes (LED) were constructed from these compounds, (I) ITO/Cpd/TPBI/LiF/Al and (II) ITO/Cpd/Alq3/LiF/Al, where TPBI and Alq3 are 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene and tris(8-hydroxyquinolinato)aluminium, respectively. In type I devices, the compounds function as the hole-transporting and emitting material. In type II devices, emission from Alq3 is observed. Several type I devices emit pure blue light, and most of the devices II have very promising performance. The relation between the energy levels of the materials and the performance of the light-emitting diodes is discussed.

Lateral n–p junction for acoustoelectric nanocircuits

We report the experimental realization of a device comprising a lateral n–p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of light-emitting diode is suitable for integration into acoustoelectric nanocircuits in which quasione-dimensional semiconductor channels serve as “wires” through which packets of charge are transported by surface acoustic waves. The diode provides a means by which to extend the functionality of acoustoelectric nanocircuits into the optical domain.

Solid-state lighting: failure analysis of white LEDs

Long life, on the order of 50,000–100,000 h, is one of the key features of light-emitting diodes (LEDs) that has attracted the lighting community to this technology. White LEDs have yet to demonstrate this capability. The goal of the study described in this manuscript was to understand what affects the long-term performance of white LEDs. Different types of LEDs have different degradation mechanisms. As a starting point, this study considered a commonly available commercial package, the 5 mm epoxy-encapsulated phosphor-converted (YAG:Ce) white LED. Based on past studies, it was hypothesized that junction heat and the amount of short-wavelength emission would influence the degradation rate of 5 mm type white LEDs, mainly due to yellowing of the epoxy encapsulant. Two groups of white LEDs were life-tested. The LEDs in one group had similar junction temperatures but different amplitudes for the short-wavelength radiation, and the LEDs in the second group had similar amplitudes for the short-wavelength radiation but different junction temperatures. Experimental results showed that the degradation rate depends on both the junction temperature and the amplitude of short-wavelength radiation. However, the temperature effect was much greater than the short-wavelength amplitude effect. Furthermore, the phosphor medium surrounding the die behaves like a lambertian scatterer. As a result, some portion of the light circulates between the phosphor layer and the reflector cup, potentially increasing the epoxy-yellowing issue. To validate this theory, a second experiment was conducted with LEDs that had the phosphor layer both close to the die and further away. The results showed that the LEDs with the phosphor layer away from the die degraded at a slower rate.

Use of ultrabright LEDs for the determination of static and time-resolved florescence information of liquid and solid crude oil samples

Ultrabright light emitting diodes (LEDs) are an inexpensive alternative to laser diodes (LDs) and other short wavelength emitting light sources. They have a high stability, a long lifetime, and a very low power consumption. A large number of publications are already available for fluorescence applications using this type of LEDs. Most of them are describing fluorescence intensity measurements. Only some of them are dealing with time-resolved methods, like single photon timing. LED modulation fluorometry is a very recent application, which can also be used for environmental investigations, like the detection of polycyclic aromatic hydrocarbons (PAHs). This article demonstrates the possible application of ultrabright LEDs for the time-resolved fluorescence detection of crude oil contaminated samples.

Use of ultrabright LEDs for the determination of static and time-resolved florescence information of liquid and solid crude oil samples

Ultrabright light emitting diodes (LEDs) are an inexpensive alternative to laser diodes (LDs) and other short wavelength emitting light sources. They have a high stability, a long lifetime, and a very low power consumption. A large number of publications are already available for fluorescence applications using this type of LEDs. Most of them are describing fluorescence intensity measurements. Only some of them are dealing with time-resolved methods, like single photon timing. LED modulation fluorometry is a very recent application, which can also be used for environmental investigations, like the detection of polycyclic aromatic hydrocarbons (PAHs). This article demonstrates the possible application of ultrabright LEDs for the time-resolved fluorescence detection of crude oil contaminated samples.

Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

Light-emitting diodes for the wavelength range λ=3.3–4.5 µm were fabricated on the basis of InAsSbP/InAsSb heterostructures grown by metal-organic vapor-phase epitaxy. The use of vapor-phase epitaxy made it possible to appreciably increase the phosphorus content in barrier layers (up to 50%) in comparison with that attainable in the case of liquid-phase epitaxy; correspondingly, it was possible to improve confinement of charge carriers in the active region of the structures. Photoluminescent properties of InAsSb layers, electroluminescent properties of light-emitting diodes, and dependences of the emission power on current were studied. Two types of light-emitting diodes were fabricated: (i) with extraction of emission through the substrate (type A) and (ii) with extraction of emission through the epitaxial layer (type B). The light-emitting diodes operating in the pulse mode (with a relative pulse duration of 20) had an emission power of 1.2 mW at room temperature.

Blue-Emitting Anthracenes with End-Capping Diarylamines

A new series of 2-tert-butyl-9,10-bis(bromoaryl)anthracenes have been synthesized from 2-tert-butyl-9,10-anthraquinone. Palladium-catalyzed C−N bond formation between these bromo compounds and diarylamines provides stable 2-tert-butyl-9,10-diarylanthracenes containing two peripheral diarylamines (anth). They possess high thermal decomposition temperature (Td > 450 °C) and form a stable glass (Tg > 130 °C). Furthermore, they are fluorescent in the blue region with moderate to good quantum efficiencies. Two types of light-emitting diodes (LED) were constructed from anth, (I) ITO/anth/TPBI/Mg:Ag and (II) ITO/anth/Alq3/Mg:Ag, where TPBI and Alq3 are 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene and tris(8-hydroxyquinolinato)aluminum, respectively. In type I devices, the anth function as the hole-transporting and emitting material. In type II devices, emission from Alq3 is observed. Several blue-light-emitting type I devices exhibit good maximum brightness and physical performance. The relation between the ener...

LEDs Are Diodes

In this activity 50-socket strands of incandescent holiday lights are cut to produce 2-socket strands and 6-socket strands. One of the incandescent bulbs can be replaced with a light-emitting diode (LED). Typical LED circuits contain a resistor to limit current flow; in these circuits that function is performed by the remaining incandescent bulb(s). The diode nature of LEDs is demonstrated, as well as the energy associated with different wavelengths of light. The activity illustrates the structure and properties of matter, the interactions of energy and matter, the relationship of energy and color, and the contributions of chemistry to high-tech materials.