Abstract
AbstractWe demonstrate the fabrication of hexagonal pyramid shaped light‐emitting diodes (LEDs), “mega‐cone” LEDs based on ZnO/GaN wafer bonding. Compared with a conventional type LEDs with thin Ni/Au p‐type electrode, external quantum efficiency was 3.1 times higher at 20 mA of current injection condition. We also report on the structural, optical, and electrical characteristics of the mega‐cone LED. The results here indicate the high potential of these mega‐cone LEDs for light sources. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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