Two-terminal Devices Research Articles

Electro-optic tuning in composite silicon photonics based on ferroionic 2D materials

Tunable optical materials are indispensable elements in modern optoelectronics, especially in integrated photonics circuits where precise control over the effective refractive index is essential for diverse applications. Two-dimensional materials like transition metal dichalcogenides (TMDs) and graphene exhibit remarkable optical responses to external stimuli. However, achieving distinctive modulation across short-wave infrared (SWIR) regions while enabling precise phase control at low signal loss within a compact footprint remains an ongoing challenge. In this work, we unveil the robust electro-refractive response of multilayer ferroionic two-dimensional CuCrP2S6 (CCPS) in the near-infrared wavelength range. By integrating CCPS into silicon photonics (SiPh) microring resonators (MRR), we enhance light-matter interaction and measurement sensitivity to minute phase and absorption variations. Results show that electrically driven Cu ions can tune the effective refractive index on the order of 2.8 × 10−3 RIU (refractive index unit) while preserving extinction ratios and resonance linewidth. Notably, these devices exhibit low optical losses and excellent modulation efficiency of 0.25 V.cm with a consistent blue shift in the resonance wavelengths among all devices for either polarity of the applied voltage. These results outperform earlier findings on phase shifters based on TMDs. Furthermore, our study demonstrates distinct variations in electro-optic tuning sensitivity when comparing transverse electric (TE) and transverse magnetic (TM) modes, revealing a polarization-dependent response that paves the way for diverse applications in light manipulation. The combined optoelectronic and ionotronic capabilities of two-terminal CCPS devices present extensive opportunities across several domains. Their potential applications range from phased arrays and optical switching to their use in environmental sensing and metrology, optical imaging systems, and neuromorphic systems in light-sensitive artificial synapses.

Enhanced read resolution in reconfigurable memristive synapses for Spiking Neural Networks

The synapse is a key element circuit in any memristor-based neuromorphic computing system. A memristor is a two-terminal analog memory device. Memristive synapses suffer from various challenges including high voltage, SET or RESET failure, and READ margin issues that can degrade the distinguishability of stored weights. Enhancing READ resolution is very important to improving the reliability of memristive synapses. Usually, the READ resolution is very small for a memristive synapse with a 4-bit data precision. This work considers a step-by-step analysis to enhance the READ current resolution or the read current difference between two resistance levels for a current-controlled memristor-based synapse. An empirical model is used to characterize the HfO2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\hbox {HfO}}_{2}$$\\end{document} based memristive device. 1st\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$1\ extrm{st}$$\\end{document} and 2nd\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$2\ extrm{nd}$$\\end{document} stage device of our proposed synapse design can be scaled to enhance the READ current margin up to ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim$$\\end{document} 4.3×\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ imes$$\\end{document} and ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim$$\\end{document} 21%, respectively. Moreover, READ current resolution can be enhanced with run-time adaptation techniques such as READ voltage scaling and body biasing. The READ voltage scaling and body biasing can improve the READ current resolution by about 46% and 15%, respectively. TENNLab’s neuromorphic computing framework is leveraged to evaluate the effect of READ current resolution on classification, control, and reservoir computing applications. Higher READ current resolution shows better accuracy than lower resolution even when facing different levels of read noise.

Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy.

Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.

Penggabungan Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> dalam Matriks Poli (Metil Metakrilat) untuk Aplikasi Memori Tidak Meruap

MXenes, with their unique surface properties and 2D structure, have demonstrated promising potential in electronic devices, particularly in memory storage. This study explored the potential of 2D Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> for the nonvolatile memory (NVM) application. The simple solution process routes were used to fabricate the two-terminal bistable switching devices. The silver nanowires/nanocomposite/ITO structure was deposited on a glass substrate using spin coating and spray coating techniques. The Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene flakes were incorporated into a poly(methyl methacrylate) (PMMA) polymer host to form the nanocomposite and act as a charge-trapping layer. Meanwhile, PMMA acts as a dielectric layer. The measured current-voltage data showed a bistable current behavior with the presence of a memory window. The fabricated NVM memory devices were reprogrammable when the endurance test was performed and stable up to 1×104 s cycles with a distinct ON/OFF ratio of 103. The conduction mechanisms were identified using the curve-fitting method with double log plots of current-voltage (I-V) data. Based on the obtained I-V characteristics, various conduction mechanisms, especially Schottky and Poole-Frenkel emission, trapped charge limiting current, and space charge limited current, were proposed to be responsible for the bistable switching behavior. Thus, the results of this study provide an experimental basis for using MXene in non-volatile memory applications.

Semi-active inerters: a review of the literature

The inerter was introduced as a mechanical counterpart to the electrical capacitor, completing the force-current analogy. This is a one-port, two-terminal device in which the equal and opposite forces exerted at its terminals are proportional to the relative acceleration between them. Within this relationship, the “inertance” is the coefficient of proportionality and carries the unit of mass. This implies that the inerter can exert an inertial force at its terminals, effectively representing a virtual mass. Due to these properties, inerters have gained popularity, finding applications as components of vibration control systems and energy harvesters. Derived from passive inerters, semi-active inerters are integrated with active control systems to regulate their inertance. Since their introduction, semi-active inerters have been pivotal in situations demanding active monitoring of natural frequency or control force, generally outperforming their passive counterparts. While numerous significant reviews on passive inerters and their applications have been published in respected journals, dedicated literature reviews on semi-active inerters remain scarce. This review seeks to bridge this gap, offering a comprehensive literature review on semi-active inerters and highlighting research challenges and opportunities. Given the novelty of semi-active inerters, they present a fascinating area of study.

Pinched Hysteresis Loop with Nonlinear Electronic Components: From Memristor to Hysteristor Concepts

A memristor is an electrical two-terminal passive device that exhibits a pinched hysteresis loop that always passes through the origin in the voltage-current plane. We found a system that also exhibits pinched hysteresis loop, which, consequently following the trend in the literature, can be called memristors; however, their dynamics do not match the equation of memristor that is widely spread and used in the literature. For this reason, in this work, we proposed the name of hysteristor of order n. It is a passive system with zero-crossing hysteresis loop in the V-I plane but not necessarily governed by the conventional equations of memristors. The system is proposed to provide a comprehensive circuit taxonomy. The concept of a hysteristor encapsulates and generalizes the idea of memristive systems. To validate the theory, we present theoretical analysis and representative simulations of a novel hysteristor of order 1.

Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device

Tunable Nonreciprocal Response of KTaO₃-Based Two-Terminal Device

Bias-tunable temperature coefficient of resistance in Ge transistors

Ge-based bolometers are widely used for near-infrared detection for a broad range of applications such as thermography or chemical analysis. Notably, for the thermometers used in bolometers, integration, scaling, and sensitivity as well as functionality are of utmost importance. In this regard, Ge exhibits a favorable temperature sensitivity due to the relatively low bandgap and a high intrinsic charge carrier concentration. In this work, we demonstrate a nanoscale thermometer for bolometric applications on the base of Ge-on-insulator nanosheets with monolithic Al source/drain contacts envisioned for future wafer-scale integration. Importantly, electrostatic gating of the nanosheets allows the operation as a Schottky barrier field-effect transistor, providing tunability of the energy landscape and the involved charge carrier injection in interaction with the metal-semiconductor junctions. In this approach, the top-gate electrode and drain contact are connected, thus resembling a two-terminal device with bias-tunable temperature coefficient of resistance (TCR) values between 0%/K and −3.8%/K in the temperature range of T = 125–150 K. Moreover, in this configuration, even at room temperature, a maximum TCR value of −1.6%/K is achieved. The bias-tunable TCR exhibited in these devices may enable advanced concepts for room temperature bolometric applications and allow co-integration with nanoelectronics.

Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices

Memristive devices have emerged as promising alternatives to traditional complementary metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems. These two-terminal electronic devices, known for their non-volatile memory properties, can emulate synaptic behavior within artificial neural networks, offering remarkable advantages, including scalability, energy efficiency, rapid operation, compact size, and ease of fabrication. They hold the potential to serve as fundamental components for artificial neurons, revolutionizing neuromorphic computing systems by closely mimicking biological neurons. However, the integration of resistive random-access memory (RRAM) into commercial production faces challenges due to substantial variations in resistive switching (RS) parameters, which include cycle-to-cycle (C2C) and device-to-device (D2D) fluctuations. These variations are rooted in the stochastic nature of RS, linked to physical mechanisms like diffusion and redox reactions. Nonetheless, limitations exist in the current analytical approaches, emphasizing the need for more standardized tools to assess memristive device reliability consistently. Weibull distribution is widely used to analyze RRAM variability and many further studies are based on it. However, this distribution may not work well for some memristive devices. In such cases, one can use other statistical distributions available in the literature. In the present work, statistical distributions, namely Weibull, Exponential, Log-Normal, Gamma, and Logistic distributions, are employed to scrutinize memristive devices device parameters, shedding light on their performance and reliability. Also, analytical methods namely maximum likelihood estimates for parameter estimation and Kolmogorov-Smirnov test for assessing goodness of fit of the distributions are used. This study aims to provide an approach with a deeper understanding of memristive device parameters and analysis techniques.

Coexistence of electron and phonon topology in conjunction with quantum transport device modeling

The escalating research in the field of topology necessitates an understanding of the underlying rich physics behind the materials possessing unique features of non-trivial topology in both electronic and phononic states. Due to the interaction between electronic quasiparticles and spin degrees of freedom, the realization of magnetic topological materials has opened up a new frontier with unusual topological phases, however, these are rarely reported alongside phononic quasiparticle excitations. In this work, by first-principles calculations and symmetry analysis, the intermetallic ferromagnetic compounds MnGaGe and MnZnSb with the coexistence of exceptional topological features in the electronic and phononic states are proposed. These compounds host nodal surface on ky=π plane in bulk Brillouin zone in the electronic and phononic spectra protected by the combination of time-reversal symmetry and nonsymmorphic two-fold screw-rotation symmetry. In the former case, a spin-polarized nodal surface is present in the majority and minority spin channels and found to be robust to ground-state magnetic polarization. The presence of nodal line features is analyzed in both the quasiparticle spectra, whose non-trivial nature is confirmed by the Berry phase calculation. The incorporation of spin–orbit coupling in the electron spectra introduces distinctive characteristics in the transport properties, facilitating the emergence of anomalous Hall conductivity through Berry curvature in both bulk and monolayer. Furthermore, the monolayer has been proposed as a two-terminal device model to investigate the quantum transport properties using the non-equilibrium Green’s function approach. This superlative combination of observations and modeling sets the path for a greater level of insight into the behavior and aspects of topological materials at the atomic scale.

Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO3 based two-terminal devices - efficient way to control the synaptic amplification.

Brain-inspired computing systems require a rich variety of neuromorphic devices using multi-functional materials operating at room temperature. Artificial synapses which can be operated using optical and electrical stimuli are in high demand. In this regard, layered materials have attracted a lot of attention due to their tunable energy gap and exotic properties. In the current study, we report the growth of layered MoO3 using the chemical vapor deposition (CVD) technique. MoO3 has an energy gap of 3.22 eV and grows with a large aspect ratio, as seen through optical and scanning electron microscopy. We used transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy for complete characterisation. The two-terminal devices using platinum (Pt/MoO3/Pt) exhibit superior memory with the high-resistance state (HRS) and low-resistance state (LRS) differing by a large resistance (∼MΩ). The devices also show excellent synaptic characteristics. Both optical and electrical pulses can be utilised to stimulate the synapse. Consistent learning (potentiation) and forgetting (depression) curves are measured. Transition from long term depression to long term potentiation can be achieved using the spike frequency dependent pulsing scheme. We have found that the amplification of postsynaptic current can be tuned using such frequency dependent spikes. This will help us to design neuromorphic devices with the required synaptic amplification.

Stretchable hierarchical metal wire networks for neuromorphic emulation of nociception and anti-nociception.

Among biomimetic technologies, the incorporation of sensory hardware holds exceptional utility in human-machine interfacing. In this context, devices receptive to nociception and emulating antinociception gain significance as part of pain management. Here we report, a stretchable two-terminal resistive neuromorphic device consisting of a hierarchical Ag microwire network formed using a crack templating protocol. The device demonstrates sensitivity to strain, where the application of strain induces the formation of gaps across active elements, rendering the device electrically open. Following activation by voltage pulses, the device exhibits potentiated states with finite retentions arising from filamentary growth across these gaps due to field migration. Remarkably, the strain-induced functioning alongside controllable gaps enables achieving user-controlled neuromorphic properties, desired for self-adaptive intelligent systems. Interestingly, in the neuromorphic potentiated state, the response to strain is enhanced by ∼106 due to higher sensitivities associated with nanofilaments. The device emulates basic neuromorphic functionalities such as threshold switching, and short-term (STP) and long-term potentiations (LTP). Furthermore, the sensitivity has been exploited in mimicking nociception through strain-induced changes in the potentiated state. Interestingly, repetition of the strain stimulus leads to endurance making the device restore its conductance, thereby emulating adaptation and habituation representing the antinociceptive behavior.

Physical reservoirs based on MoS2-HZO integrated ferroelectric field-effect transistors for reservoir computing systems.

Reservoir computing (RC), a variant of recurrent neural networks (RNNs), is well-known for its reduced energy consumption through exclusive focus on training the output weight and its superior performance in handling spatiotemporal information. Implementing these networks in hardware requires devices with superior fading memory behavior. Unlike filament-based two-terminal devices, those relying on ferroelectric switching demonstrate improved voltage reliability, while three-terminal transistors provide additional active control. HfO2-based ferroelectric materials such as Hf0.5Zr0.5O2 (HZO), have garnered attention for their scalability and seamless integration with CMOS technology. This study implements a RC hardware based on MoS2-HZO integrated device structure with enhanced spontaneous polarization field. By adjusting the oxygen vacancy concentration, the devices exhibit consistent responses to both identical and nonidentical voltages, making them suitable for diverse RC applications. The high accuracy of MNIST handwritten digits recognition highlights the rich reservoir states of the traditional RC architecture. Additionally, the impact of masks on RC implementation is assessed, showcasing the device's capability for spatiotemporal signal analysis. This development paves the way for implementing energy-efficient and high-performance computing solutions.

Heterointerface engineering of layered double hydroxide/MAPbBr3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device.

Solution-processable semiconductor heterostructures enable scalable fabrication of high performance electronic and optoelectronic devices with tunable functions via heterointerface control. In particular, artificial optical synapses require interface manipulation for nonlinear signal processing. However, the limited combinations of materials for heterostructure construction have restricted the tunability of synaptic behaviors with simple device configurations. Herein, MAPbBr3 nanocrystals were hybridized with MgAl layered double hydroxide (LDH) nanoplates through a room temperature self-assembly process. The formation of such heterostructures, which exhibited an epitaxial relationship, enabled effective hole transfer from MAPbBr3 to LDH, and greatly reduced the defect states in MAPbBr3. Importantly, the ion-conductive nature of LDH and its ability to form a charged surface layer even under low humidity conditions allowed it to attract and trap holes from MAPbBr3. This imparted tunable synaptic behaviors and short-term plasticity (STP) to long-term plasticity (LTP) transition to a two-terminal device based on the LDH-MAPbBr3 heterostructures. The further neuromorphic computing simulation under varying humidity conditions showcased their potential in learning and recognition tasks under ambient conditions. Our work presents a new type of epitaxial heterostructure comprising metal halide perovskites and layered ion-conductive materials, and provides a new way of realizing charge-trapping induced synaptic behaviors.

Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction.

As semiconductor scaling continues to reach sub-nanometer levels, two-dimensional (2D) semiconductors are emerging as a promising candidate for the post-silicon material. Among these alternatives, Bi2O2Se has risen as an exceptionally promising 2D semiconductor thanks to its excellent electrical properties, attributed to its appropriate bandgap and small effective mass. However, unlike other 2D materials, growth of large-scale Bi2O2Se films with precise layer control is still challenging due to its large surface energy caused by relatively strong interlayer electrostatic interactions. Here, we present the successful growth of a wafer-scale (∼3 cm) Bi2O2Se film with precise thickness control down to the monolayer level on TiO2-terminated SrTiO3 using metal-organic chemical vapor deposition (MOCVD). Scanning transmission electron microscopy (STEM) analysis confirmed the formation of a [BiTiO4]1- interfacial structure, and density functional theory (DFT) calculations revealed that the formation of [BiTiO4]1- significantly reduced the interfacial energy between Bi2O2Se and SrTiO3, thereby promoting 2D growth. Additionally, spectral responsivity measurements of two-terminal devices confirmed a bandgap increase of up to 1.9 eV in monolayer Bi2O2Se, which is consistent with our DFT calculations. Finally, we demonstrated high-performance Bi2O2Se field-effect transistor (FET) arrays, exhibiting an excellent average electron mobility of 56.29 cm2/(V·s). This process is anticipated to enable wafer-scale applications of 2D Bi2O2Se and facilitate exploration of intriguing physical phenomena in confined 2D systems.

Enhanced CO sensing with highly sensitive and selective rGO-Ru OEP chemiresistive sensor

The escalating discharge of noxious gases resulting from unmitigated anthropogenic activities has emerged as a pivotal concern, presenting imminent threats to global ecosystems. In response to this pressing challenge, the development of cutting-edge materials within gas sensor systems emerges as a promising avenue for the precise detection of hazardous gaseous pollutants. This investigation delves into the synthesis and characterization of a novel composite material: reduced graphene oxide (rGO) modified with ruthenium Octaethyl porphyrin (Ru OEP), with a primary focus on its chemiresistive sensing properties. The meticulously deposited rGO-modified Ru OEP material onto gold microelectrodes, featuring a 3 µm gap on a silicon Si/SiO2 substrate, resulted in an intricate two-terminal chemiresistive sensor device. Comprehensive structural, spectroscopic, and morphological analyses were conducted to elucidate the intricacies of the composite material. The electrical characterization, evaluated through I-V measurements, provided nuanced insights into the device's resistance properties. Notably, the chemiresistive sensor demonstrated exceptional responsiveness to Carbon monoxide (CO) gas, exhibiting an impressively low limit of detection (LOD) at 2.5 ppm. The fabricated sensor showcased rapid response and recovery times, registering at 43 s and 65 s, respectively, underscoring its efficiency in real-time applications. Furthermore, the sensor maintained linearity and stability across a broad spectrum of conditions, ensuring prolonged reliability and consistent performance. This research underscores the potential of advanced materials, specifically the rGO-modified Ru OEP composite, in crafting highly effective gas sensors to address urgent environmental and safety concerns. The presented findings contribute invaluable insights to the burgeoning field of gas sensor technology, paving the way for innovative solutions to mitigate the adverse impacts of anthropogenic activities on our delicate ecosystems.

Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range

This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition process was used for the graphene layer deposition and its quality was checked with optical microscopy, scanning electron microscopy and Raman spectroscopy. For the device fabrication, optical lithography was used for electrode patterns through a mask, and Ti/Au (10 nm/100 nm) metallic contacts were deposited by thermal evaporation. We report low and high field electrical measurements of several devices, under a controlled environment over a wide temperature range, from 77 to 300 K. At 77 K, the drain current decreases, i.e. the resistance of the graphene increases, and the nonlinearity is still present. The maximum influence of the temperature is reached at the charges neutrality point, and we observe that the temperature could influence the position of the charge neutrality point. This indicates that the carriers are thermally activated, which yields a least pronounced current with the increase of the back gate voltage.

Bursting dynamics in a spiking neuron with a memristive voltage-gated channel

We introduce a voltage-gated conductance model for an artificial neuron that exhibits tonic, fast, and two types of intrinsic burst spiking. The spike generation is achieved with a single voltage-gated channel that exploits the conductance commutation properties of a two-terminal memristive device. Our circuit implementation is of unprecedented simplicity, using just four electronic components, all conventional, cheap and out-of-the-shelf. Our bursting neuron is a two-compartment model, similar to the Pinsky–Rinzel model. We obtain the full phase diagram and discuss the origin of the different regions. We find that the spike traces of the model bare striking similarity to experimental biological neuronal recordings. Our work may open a new way to investigate neural pathologies, such as epilepsy and Parkinson’s disease, from the study of the phase diagram and the transitions between spiking states of physical neuron models.

Operando two-terminal devices inside a transmission electron microscope

Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and integration. Electrical biasing within in situ transmission electron microscopy using MEMS-based platforms is a promising technique for nano-characterization under operando conditions. However, conventional focused ion beam sample preparation can introduce parasitic current paths, limiting device performance and leading to overestimated electrical responses. Here we demonstrate connectivity of TEM lamella devices obtained from a novel electrical contacting method based solely on van der Waals forces. This method reduces parasitic leakage currents by at least five orders of magnitude relative to reported preparation approaches. Our methodology enables operation of stack devices inside a microscope with device currents as low as 10 pA. We apply this approach to observe in situ biasing-induced defect formation, providing valuable insights into the behavior of an SrTiO3-based memristor.

Realization of dual-functional resistive switching characteristics in Ag−In−Zn−S/sericin peptide-based memristive device

Employing suitable materials and device engineering is one of the crucial methods toward the realization of multifunctional memristive devices for constructing bioinspired neuromorphic systems. In this work, dual-functional memristors composed of eco-friendly natural silk sericin, coexistently enabling the achievement of threshold switching and memory switching triggered by adjusting the compliance current value, have been fabricated with a specific two-terminal device structure: Ag/Ag−In−Zn−S/silk sericin/W. Experimentally, the as-manufactured memristors exhibit several desirable qualities, such as low switching voltage (< 0.7 V), relatively small cycle-to-cycle and device-to-device variabilities, nonvolatile multilevel storage characteristics, and rapid switching speed (40 ns). Beyond these qualities, fundamental synaptic behaviors, such as paired-pulse facilitation and spike-timing-dependent plasticity (STDP), have been mimicked. This was made possible by a filamentary mechanism based on Ag migration. The fitted time constants corresponding to the STDP potentiation and depression are about 30 ms, and the highest changes in synaptic weight for positive and negative voltage pulses are 84.4% and 61.7%, respectively. Furthermore, the typical coincidence detection task has been executed, demonstrated by simulation based on the fitted STDP's parameters of the sericin-based device. The results from this study indicate that the sericin-based memristors, as designed, have the potential to be employed in the creation of versatile neuromorphic devices for neuromorphic computing systems.