Two-dimensional Electron Gas Research Articles

Localization and other properties of electronic states in a semiconductor revealed by their response to surface doping and band-bending potential

Using photoelectron spectroscopy (PES), we study InAs(001) and InAs(110) surfaces, doped with Te atoms to induce strong band-bending phenomena and a formation of two-dimensional electron gases (2DEGs). The band structure of the 2DEGs as well as the coexisting 3D bulk electronic structure are investigated. We discuss several schemes to estimate the band-bending potentials at surfaces by PES methods, appropriate in different situations, e.g. in the presence of a significant band tailing. We use the Schroedinger–Poisson scheme as well as the Thomas–Fermi method to model the band-bending potential profiles and the 2DEG band energies. For the InAs crystal we find that the valence bands investigated with PES closely follow the band-bending potential which evidences that valence electronic states are localized to within few nm. In contrast, the conduction band is entirely insensitive to the band-bending potential, evidencing that the extent of electronic states within this band is at least 103nm.

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

Negative damping of terahertz plasmons in counter-streaming double-layer two-dimensional electron gases

Abstract The plasmon excitation in two-dimensional electron gases (2DEGs) is a significant way of achieving micro-nanoscale terahertz (THz) devices. Here, we establish a kinetic simulation model to study the THz plasmons amplification in a semiconductor double-quantum-well system with counter-streaming electron drift velocities. By comparing the simulation results with theoretical dispersion relations, we confirm two competing mechanisms of negative damping suitable for THz amplification: Cherenkov-type two-stream instability and a new non-Cherenkov mechanism called kinetic relaxation instability. The former is caused by the interlayer coupling of two slow plasmon modes and only exists when the drift velocities are much greater than the fermi velocities. The latter is a statistical effect caused by the momentum relaxation of electron-impurity scattering and predominates at lower drift velocities. We show that an approximate kinetic dispersion relation can accurately predict the wave growth rates of the two mechanisms. The results also indicate that the saturated plasmonic waves undergo strong nonlinearities such as wave distortion, frequency downshift, wave-packet formation, and spectrum broadening. The nonlinear evolution can be interpreted as the merging of bubble structures in the electron phase-space distribution. The present results not only reveal the potential mechanisms of the plasmonic instabilities in double-layer 2DEGs, but also provide a new guideline for the design of on-chip THz amplifiers.

Impurity affected transport properties of quantum well heterostructures with electronic and high-κ dielectric quantum screening

The effect of electronic and high-κ dielectric quantum screening (ES and DS) on the impurity-limited electron transport properties of quantum well/high-κ dielectric barrier type heterostructures with two-dimensional electron gas (2DEG) is studied theoretically. Characteristic of these heterosystems the 2D compound forms of screened impurity potential are employed for the first time. In the framework of 2D Debye-Hückel potential form an electron momentum relaxation time (τ) expression depending on the impurity 2D screening radius is obtained analytically. A numerical analysis of τ is carried out for the realistic HfO/InSb/HfO2QW heterostructure taking account both the finite mismatch of the energy bands at the heterointerface and the energy band non-parabolicity of InSb. The contributions of screened potential compound 2D forms to τ are established depending on QW width. A significant suppression of the scattering rate τ−1 (by an order of magnitude) is received with accounting of ES + DS combined effect.

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

Plasmon scattering at a junction in double-layer two-dimensional electron gas plasmonic waveguide

Abstract The scattering of plasmons at a junction within a double-layer two-dimensional electron gas plasmonic waveguide is studied via a full electromagnetic method. The dispersion relation is derived by utilizing the transfer matrix method and can be extended to the situation of an arbitrary number of layers. By numerically solving the dispersion equations, both the acoustic and optical plasmon modes are identified in this double layer system, and the unstable plasmon modes arising from plasmon coupling in different layers are discussed elaborately. Subsequently, the total fields are expanded with eigenmodes and matched at the interface to analyze the scattering characteristics at the junction. The results indicate that the total power of the plasmon mode is amplified when the electron fluid flows from a high concentration region to a low concentration region, and the amplification is more evident at a higher drift velocity. Additionally, we address the scattering of unstable plasmons caused by the two-stream instability and find that the transmitted plasmons are excited intensively at the incidence of the growing plasmon, leading to the plasmon amplification. The detailed examination of plasmon scattering at junction is the prerequisite for studying more complex structures of terahertz plasmonic devices and comprehending the corresponding amplification mechanism.

Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode

In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed. NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two-dimensional electron gas in the anode region of the device. Combined with the etching-free technology, the damage caused by etching the AlGaN barrier layer is successfully avoided. The capacitance of the device was reduced from 28 pF mm−1 (Schottky) to 966 fF/mm (NiO) which reduced 97%. At the same time the NiO anode devices with a reverse current leakage of ~10−8 A/mm@−100V achieved a high current ON/OFF ratio of ~10-8. NiO not only reduces the capacitance and leakage of the device but also enhances its anti-collapse ability. Without using the structure of field plates, the breakdown voltage of the device was also increased compared with the Schottky diode.

Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off

N-polar Gallium nitride (GaN) technology is one of the most important technical routes for millimeter-wave devices. This paper introduces a new approach based on reverse epitaxial layer transfer technology to fabricate N-polar GaN materials. By combining low-damage surface-activated bonding and laser lift-off techniques, a wafer-scale N-polar GaN heterogeneous structure with low O impurities, high two-dimensional electron gas density, and high carrier mobility was obtained. The thin (∼2 nm) crystal bonding interlayer, coupled with the low thermal boundary resistance of only 6.8 m2K/G·W, provides evidence for the low interfacial damage caused by this approach. These results demonstrate its superiority as an attractive method for fabricating high-performance N-polar GaN millimeter-wave devices.

Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid‐Infrared Imaging

AbstractOwing to their consistently emerging applications in modern photonics, highly sensitive and rapid mid‐infrared (MIR) photodetectors, operating at high temperatures, are of great significance. Herein, a novel PbTe/Ge heterostructure is introduced. Notably, the discovery of a 2D electron gas (2DEG) system on the surface of the PbTe layer is experimentally identified for the first time. A high‐performance PbTe/Ge heterostructure MIR photodetector utilizing a plasmonic photovoltaic effect is developed by employing asymmetric electrodes. The photodetecting device demonstrates an exceptionally high detectivity of 1.1 × 1011 Jones along with a short response time of 15 ns at room temperature. Additionally, the proposed plasmonic photovoltaic mechanism of the device is investigated and mainly ascribed to the propagating plasmons, generated by the coupling of the 2DEG with incident MIR photons. Moreover, a linear detector array (LDA) of PbTe/Ge is demonstrated for a thermal imaging application, which exhibits promising high‐quality real‐time imaging via the 2D photodetector arrays on Ge‐based integrated circuits. This work opens up a new way for the development of next‐generation, advanced MIR photonic devices and integrated photonic systems.

Cathodoluminescence of polarization-induced energy states at AlGaN/GaN interface

Abstract Recent progress in manufacturing high-electron-mobility transistors and optoelectronic devices highlights the necessity of understanding the charge dynamics and its impact on the optical properties inside heterostructures. Herein, we study the optical properties of GaN / A l 0.23 G a 0.77 N / GaN heterostructures using cathodoluminescence (CL) and photoluminescence (PL) spectroscopy. We explore the influence of generated secondary carriers after electron illumination and their penetration depth on the luminescence spectra. Our findings indicate that a higher laser power intensifies the PL response and establishes Fabry–Perot-like resonances. Furthermore, the intensity of the CL response shows a linear behavior versus the acceleration voltage and the current of electron beams for the yellow luminescence peak. A near-infrared CL peak (740 nm) is observed only when illuminating the sample with high currents that is attributed to the trapping of the secondary electrons within the Schottky barrier and the manipulation of the two-dimensional electron gas and the quantum-confined states within the barrier. Self-consistent Poisson–Schrödinger simulations verify this aspect. This research unveils the intricate charge dynamics associated with the interaction of electron beams with heterostructure systems, paving the way for innovative optoelectronic applications in semiconductor devices.

Pseudospin Quantum Hall Ferromagnetism Probed by Electron Spin Resonance.

We study the effect of the pseudospin ferromagnetism with the aid of an electrically detected electron spin resonance in a wide AlAs quantum well containing a high quality two-dimensional electron system. Here, pseudospin emerges as a two-component degree of freedom, that labels degenerate energy minima in momentum space populated by electrons. The built-in mechanical strain in the sample studied imposes a finite "Zeeman" splitting between the pseudospin "up" and "down" states. Because of the anisotropy of the electron spin splitting we were able to independently measure the electron spin resonances originating from the two in-plane valleys. By analyzing the relative resonance amplitudes, we were able to investigate the ferromagnetic phase transitions taking place at integer filling factors of the quantum Hall effect when the magnetic field is tilted. The pseudospin nature of these transitions is demonstrated.

Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique

In this work, interface traps in β-(AlGa)2O3/Ga2O3 modulation-doped field effect transistor (MODFET) were investigated qualitatively and quantitatively by means of dynamic capacitance dispersion technique. The fabricated β-(AlGa)2O3/Ga2O3 MODFET showed drain current modulation demonstrating the transistor behavior. The existence of two-dimensional electron gas was confirmed by the plateau region in the capacitance–voltage (C–V) characteristics. The difference in capacitance profile dispersion at multifrequency C–V measurement suggested the loss mechanism due to trapping and de-trapping effects of carriers. An interface analysis of β-(AlGa)2O3/Ga2O3 heterostructures estimated the interface states with density of trap states and time constants of 0.56×1012–5.92×1012 cm−2 eV−1 and 59–27 μs, respectively.

Conformity Experiment on Inelastic Scattering Exponent of Electrons in Two Dimensions.

The quantum Hall (QH) effect is one of the most widely studied physical phenomenon in two dimensions. The plateau-plateau transition within this effect can be comprehensively described by the scaling theory, which encompasses three pivotal exponents: the critical exponent κ, the inelastic scattering exponent p, and the universal exponent γ. Prior studies have focused on measuring κ and estimating γ, assuming a constant p value of 2 across magnetic fields. Here, our work marks a significant advancement by measuring all three exponents within a single graphene device and a conventional two-dimensional electron system. This study uniquely determines p at low magnetic fields (weak localization region and well outside the QH regime) and high magnetic fields (in the vicinity of the QH regime). Employing a comprehensive analytical approach that includes weak localization, plateau-plateau transitions, and variable range hopping, we have directly determined κ, p, and γ. Our findings reveal a distinct variation in p, shifting from 1 in the low magnetic field regime to 2 in the QH regime in graphene.

Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors

A transient heat conduction equation has been proposed to describe the cooling process of a hot two-dimensional electron gas layer in a GaN-based transistor. This equation serves as the basis for a physical analytical model that explains the impacts of hot electrons in the hot two-dimensional electron gas layer via quantum coupling on the threshold voltage of GaN-based transistors. The temperature of the two-dimensional electron gas layer decreases to ambient temperature as time increases, and the threshold voltage shifts caused by such a temperature will recover with time. The proposed model accurately reflects the observed recovery of threshold voltage over time in experiments. At the same time, it offers insight into how the gate voltage, the source-drain voltage, and the ambient temperature can shift the threshold voltage in these transistors. The simplicity and analytic nature of this proposed model not only provide a physical origin of the threshold voltage instability in GaN-based devices but also offer the possibility for improving device reliability by selecting appropriate device physical parameters.

Quantum-Confined Lifshitz Transition on Weyl Semimetal Td-MoTe2.

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal Td-MoTe2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

A novel method to solve analytically the non-linear Poisson equation in the inversion layer of a MOSFET

Abstract Despite the enormous importance that the metal oxide semiconductors (MOS) and the field effect transistors (MOSFETs) have in the actual semiconductor technology, the task of finding the analytical solution of the Poisson equation in the inversion layer was not fully accomplished for more than half a century. It is a well-known fact that due to the non-linear nature of this equation, the attempts to solve it got stuck after the first integration. Nevertheless, experimental and applied researchers found ways to characterize, control, and develop MOSFET devices based on approximate models, and numerical calculations. Here I present a new method to analytically solve the nonlinear Poisson equation, in principle, for any charge distribution in the inversion layer of a MOS, and for the charge density of the original Shockley model, in particular. To this purpose, a physical argument related to the charge and field energies in the transient population-inversion process is introduced and a new nonlinear but solvable second order differential equation is obtained, whose solution also solves the original Poisson equation. The analytical results presented here allow us to derive explicit expressions for the electrical potential distribution and, very importantly, for the charge distribution, the inversion layer width and the effective impurity concentration in the depletion layer. The quantum Hall effect and other physical phenomena were discovered in the inversion layer of a MOS. The Hall effect was explained under the assumption that the charge distribution is a two-dimensional electron gas, we show here however that the 2D limit is reached only at high gate voltages. When applied to MOSFET structures, we obtain new expressions for the drain currents in the inversion and depletion layers, as functions of the impurity concentration and the gate voltage for single and double-gate MOSFETs, and we give an insight for multi-gate MOSFETs.

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

We report on fabrication and performance of sub-micrometer Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low temperature electrical measurements, we investigate the relationship between contact performance and the mechanical and chemical properties of the annealed metal stack. Contact geometry and crystallographic orientation significantly impact performance. Our results indicate that the spatial distribution of germanium in the annealed contact plays a central role in the creation of high transmission contacts. We characterize the transmission of our contacts at high magnetic fields in the quantum Hall regime. Our work establishes that contacts with an area of 0.5 μm2 and resistance less than 400 Ω can be fabricated with high yield.

Epitaxial Growth and Doping of N-Polar AlN by Plasma-Assisted Molecular Beam Epitaxy

In recent years, AlN has garnered significant attention in the research community due to its excellent electronic properties. AlN, which is an ultra-wide bandgap material with a direct band gap of 6.2 eV, has a high breakdown electric field (12 MV/cm) and high thermal conductivity. In addition, band engineering can be achieved by alloying AlN with Gallium (Ga), Indium (In), and Scandium (Sc), and two-dimensional electron gas (2DEG) is formed at the AlGaN/AlN interface due to strong piezoelectric and spontaneous polarization. Furthermore, AlN has high-temperature stability, which is suitable for application in harsh environments. Due to these unique properties, AlN has gained attention as a promising candidate for the next generation of high power electronic and optoelectronic applications.In this talk, we present the demonstration of controllable Si doping in N-polar AlN films grown on single crystal AlN substrates by plasma assisted molecular beam epitaxy (PAMBE). Through optimization of growth conditions, we obtained high quality N-polar AlN films at high temperatures. However, our studies revealed that Si incorporation dramatically decreases at such high growth temperature. To enable higher Si incorporation, a hybrid growth scheme was developed, using a combination of low-temperature and high-temperature growth condition and by using Ga as a surfactant at low growth temperature. By lowering the growth temperature of AlN to 750°C, we were able to incorporate Si with concentrations as high as 2x1020 cm-3 and demonstrated an electron concentration as high as 1.25x1019 cm-3 at room temperature.

Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density

In this study, we utilize Nextnano device simulation software to systematically investigate the dependence of 2-DEG (two-dimensional electron gas) density on the barrier and spacer Layers in InAlN/GaN high electron mobility transistors (HEMTs). By simulating a range of barrier thicknesses, In mole fractions, and spacer layer thicknesses, we reveal the intricate ways in which these parameters influence device performance. Our simulations demonstrate that precise control of the InAlN barrier thickness and In mole fraction, along with the AlN spacer thickness, is crucial for optimizing 2DEG density and, consequently, the overall electrical properties of the HEMTs. Notably, our results highlight that an InAlN barrier thickness below 12 nm, coupled with an optimized In mole fraction and a finely tuned AlN spacer thickness close to 1 nm, significantly enhances 2DEG density without compromising mobility. These insights provide a detailed understanding of the material and structural dependencies critical for the design and development of high-performance InAlN/GaN HEMTs. Our study includes detailed calculations of the device's I–V characteristics. Notably, the highest peak output current is observed at a 1 nm AlN spacer thickness, reaching 0.91 A/mm. Our findings highlight a noteworthy agreement between the results derived from our computational simulations and experimental measurements.