Epitaxial Growth and Doping of N-Polar AlN by Plasma-Assisted Molecular Beam Epitaxy

Abstract

In recent years, AlN has garnered significant attention in the research community due to its excellent electronic properties. AlN, which is an ultra-wide bandgap material with a direct band gap of 6.2 eV, has a high breakdown electric field (12 MV/cm) and high thermal conductivity. In addition, band engineering can be achieved by alloying AlN with Gallium (Ga), Indium (In), and Scandium (Sc), and two-dimensional electron gas (2DEG) is formed at the AlGaN/AlN interface due to strong piezoelectric and spontaneous polarization. Furthermore, AlN has high-temperature stability, which is suitable for application in harsh environments. Due to these unique properties, AlN has gained attention as a promising candidate for the next generation of high power electronic and optoelectronic applications.In this talk, we present the demonstration of controllable Si doping in N-polar AlN films grown on single crystal AlN substrates by plasma assisted molecular beam epitaxy (PAMBE). Through optimization of growth conditions, we obtained high quality N-polar AlN films at high temperatures. However, our studies revealed that Si incorporation dramatically decreases at such high growth temperature. To enable higher Si incorporation, a hybrid growth scheme was developed, using a combination of low-temperature and high-temperature growth condition and by using Ga as a surfactant at low growth temperature. By lowering the growth temperature of AlN to 750°C, we were able to incorporate Si with concentrations as high as 2x1020 cm-3 and demonstrated an electron concentration as high as 1.25x1019 cm-3 at room temperature.