We have quantified two-dimensional dopant profiles in Si with high accuracy using a commercial field emission gun scanning electron microscope with added secondary electron energy-filtering capabilities. Quantification was achieved for dopant concentrations of 2.8×1017–7.5×1019cm−3 with an accuracy of ±8.5%. Using energy filtering, we have measured the surface potential difference ΔΦs across a 3nm wide p-doped Si layer with respect to the n-doped substrate of a test structure to be 0.72±0.15V. Spatial resolution limits are discussed and are shown to be limited by the secondary electron escape depth. A technique for the rapid collection of calibrated energy-filtered images is also proposed.