Abstract
Two-dimensional (2D) dopant profiles, in the range of to , in laser-diffused silicon resistors were obtained using dopant selective etching (DSE) in combination with cross-sectional transmission electron microscopy (TEM) and focused ion beam technique. Compared with conventional DSE/TEM dopant evaluation, the properties of this technique, related to the reliability, reproducibility, and accuracy of quantification of dopant concentration from to , have been improved by considering a vector instead of a scalar etching rate, as determined by an etching model and by a novel calibration method. Those evaluated profiles were accurately compared with a numerical simulation based on heat-transfer and diffusion equations.
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