Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors

Abstract

In this article, we report our progress in two-dimensional (2D) dopant profiling of metal–oxide–semiconductor field effect transistor devices fabricated with 0.2 μm technology by using dopant selective etching followed with atomic force microscope imaging (DSE/AFM). By comparing device simulation results based on our measurement with electrical measurement results, we have found that in these small devices the depletion region can have a significant effect on the results of dopant concentration conversions from the selective etching data, and the necessary correction can be found by a proper estimation of the depletion width. Here we discuss the factors that affect the etching reproducibility and reliability and show our approaches to these challenges. Our results show that DSE/AFM is a useful technique for 2D dopant profiling with certain advantages if it is dealt with properly.