Abstract We present a theoretical scheme to realize two-dimensional (2D) asymmetric diffraction grating in a five-level inverted Y-type
asymmetric double semiconductor quantum wells (SQWs) structure with resonant tunneling. The SQW structure interacts with a weak probe laser field, a spatially independent 2D standing-wave (SW) field, and a Laguerre-Gaussian (LG) vortex field respectively. The results indicate that the diffraction patterns are high sensitive to amplitude modulation and phase modulation. Because of the existence
of vortex light, it is possible to realize asymmetric high-order diffraction in the SQW structure, and then a 2D asymmetric grating
is established. By adjusting the detunings of the probe field, vortex field and SW field, as well as the interaction length, diffraction intensity and direction of the 2D asymmetric electromagnetically induced grating (EIG) can be controlled effectively. In addition, the
number of orbital angular momentum (OAM) and beam waist parameter can be used to modulate the diffraction intensity and energy
transfer of the probe light in different regions. High-order diffraction intensity is enhanced and high efficiency 2D asymmetric diffraction grating with different diffraction patterns are obtained in the scheme. Such 2D asymmetric diffraction grating may be beneficial to the research of optical communication and innovative semiconductor quantum devices.
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