Tunneling Conductance Research Articles

The Origin of the Low-Temperature Minimum of Electrical Resistivity in Strontium Ferromolybdate Ceramics

In this work, we analyze the electrical behavior of strontium ferromolybdate below room temperature. We demonstrate that in SFMO ceramics, SFMO thin films deposited by pulsed laser deposition including (100) and (111) textured thin films, as well as in nonstoichiometric SFMO ceramics, an intergrain tunneling mechanism of charge carrier conduction leads to a decrease in resistivity with increasing temperature in the low-temperature region. This intergrain tunneling can be attributed to fluctuation-induced tunneling. On the other hand, bulk metallic resistivity of the grains, which increases with temperature, becomes dominant at higher temperatures and magnetic fluxes. The interplay of these conduction mechanisms leads to a resistivity minimum, i.e., a resistivity upturn below the temperature of minimum resistivity. Several mechanisms have been discussed in the literature to describe the low-temperature upturn in resistivity. Based on available literature data, we propose a revised model describing the appearance of a low-temperature resistivity minimum in SFMO ceramics by an interplay of fluctuation-induced tunneling and metallic conductivity. Additionally, we obtained that in the region of metallic conductivity at higher temperatures and magnetic fluxes, the pre-factor Rm of the temperature-dependent term of metallic conductivity written as a power law decreases exponentially with the temperature exponent m of this power law. Here, the value of m is determined by the charge scattering mechanism.

Vacancy Spectroscopy of Non-Abelian Kitaev Spin Liquids.

Spin vacancies in the non-Abelian Kitaev spin liquid are known to harbor Majorana zero modes, potentially enabling topological quantum computing at elevated temperatures. Here, we study the spectroscopic signatures of such Majorana zero modes in a scanning tunneling setup where a non-Abelian Kitaev spin liquid with a finite density of spin vacancies forms a tunneling barrier between a tip and a substrate. Our key result is a well-defined peak close to zero bias voltage in the derivative of the tunneling conductance whose voltage and intensity both increase with the density of vacancies. This "quasi-zero-voltage peak" is identified as the closest analog of the zero-voltage peak observed in topological superconductors that additionally reflects the fractionalized nature of spin-liquid-based Majorana zero modes. We further highlight a single-fermion Van Hove singularity at a higher voltage that reveals the energy scale of the emergent Majorana fermions in the Kitaev spin liquid. Our proposed signatures are within reach of current experiments on the candidate material α-RuCl_{3}.

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Formulation of conductivity, electric modulus and dielectric behaviour of calcium bismuth borovanadate glasses with varying temperature and frequency

This study explores various glass compositions within calcium bismuth borovanadate glass system, produced through melt quenching. The investigation focuses on AC conductivity, electric modulus formulation, and dielectric properties (ε′ and ε″). The AC conductivity and dielectric constants exhibit an increasing trend with rising CaO content until 10 mol%, followed by a decline for x = 15 and x = 20 mol%. Temperature and frequency-dependent conductivity reveal a dual plateau between 423 K and 523 K. The Almond west model is applied to fit AC conductivity data, extracting parameters such as direct current conductivity, crossover frequency, and frequency exponent. The glass samples demonstrate diverse conduction mechanisms, including small polaron quantum mechanical tunnelling and CBH conduction. The activation energy values for direct current conduction (Edc) ranging from 0.539 to 0.716 eV (at lower freq.) and electric modulus (ER) (0.531 to 0.707 eV) is nearly identical. Non-Debye type behaviour is reflected by dielectric studies.

Elaboration of La (Sr/Na) Mn (Ti) O3 ceramic, structural, and morphological investigations, and contribution of direct and indirect interactions on transport properties

The charge carrier's dynamics of La0.7(Sr5/6Na1/6)0.3Mn0.7Ti0.3O3 (LSNMTO) ceramic is conducted using the temperature and frequency dependences of the electrical conductivity and their scaling formalisms. The structural study indicates that LSNMTO crystallizes in a rhombohedral R3‾c perovskite structure with no detectible secondary phases. A phase transition from the high-temperature metallic behavior to the low-temperature semiconductor nature is observed from the electrical conductivity curve at TS-M = 415 K. Further, it is observed that the cation-anion-cation and the cation-cation interactions are present in the material, and play important role in governing the electrical behaviors of LSNMTO. From 200 K to 415 K, the Non-adiabatic Small Polaron Hopping is the predominant conduction process, although the Mott-Variable Range Hopping mechanism governs the conductivity at low temperatures. In the intermediate temperature range, the dynamic of the charge carriers is explained using the Shklovskii Efros model. The frequency-activated conductivity obeyed the universal laws (double-Jonscher and Jonscher laws). At high frequencies, the dispersion of the conductivity spectra is attributed to the presence of hopping and tunneling conduction processes. The Time-Temperature Superposition Principle (TTSP) is obeyed over a large temperature range from 160 K to 350 K. Below 160 K, the deviation from the TTSP is attributed to the coexistence of hopping and tunneling conduction mechanisms. Deviations from the Summerfield scaling and shifts of the isotherms to higher values on decreasing the temperature are due to the local structural disorder in LSNMTO. Therefore, the structural particularities of LSNMTO can result in diverse conduction pathways giving an increase to the deviations from the Summerfield scaling. The studied ceramic exhibits a very motivating maximum negative temperature coefficient of resistance NTCR = −13.36% which is significantly elevated as compared to previously investigated compounds.

Two-component nematic superconductivity in 4Hb-TaS2

Most superconductors have an isotropic, single component order parameter and are well described by the standard (BCS) theory for superconductivity. Unconventional, multiple-component superconductors are exceptionally rare and are much less understood. Here, we combine scanning tunneling microscopy and angle-resolved macroscopic transport for studying the candidate chiral superconductor, 4Hb-TaS2. We reveal quasi-periodic one-dimensional modulations in the tunneling conductance accompanied by two-fold symmetric superconducting critical field. The strong modulation of the in-plane critical field, Hc2, points to a nematic, unconventional order parameter. However, the imaged vortex core is isotropic at low temperatures. We suggest a model that reconciles this apparent discrepancy and takes into account previously observed spontaneous time-reversal symmetry breaking at low temperatures. The model describes a competition between a dominating chiral superconducting order parameter and a nematic one. The latter emerges close to the normal phase. Our results strongly support the existence of two-component superconductivity in 4Hb-TaS2 and can provide valuable insights into other systems with coexistent charge order and superconductivity.

Ballistic transport and spin-dependent anomalous quantum tunneling in Rashba–Zeeman and bilayer graphene hybrid structures

In this work, we have studied the spin-dependent ballistic transport and anomalous quantum tunneling in bilayer graphene horizontally placed in between two Rashba–Zeeman (RZ) leads under external electric biasing. We investigated the transmission and conductance for the proposed system using scattering matrix formalism and the Landauer–Büttiker formula considering a double delta-like barrier under a set of experimentally viable parameters. We found that the transmission characteristics are notably different for up- and down-spin incoming electrons depending upon the strength of magnetization. Moreover, the transmission of up- and down-spin electrons is found to be magnetization orientation dependent. The maximum tunneling conductance can be achieved by tuning biasing energy and magnetization strength and choosing a material with suitable Rashba spin–orbit coupling (RSOC). This astonishing property of our system can be utilized in fabricating devices, such as spin filters. We found that the Fano factor of our system is 0.4 under strong magnetization conditions, while it reduces to 0.3 under low magnetization conditions. Moreover, we also noticed that the transmission and conductance significantly depend on the Rashba–Zeeman effect. Therefore, considering a suitable RZ material, the tunneling of the electrons can be tuned and controlled. Our result suggests that considering suitable strength and orientation of magnetization with moderate RSOC, one can obtain a different transmission probability for spin species under suitable biasing energy. These results indicate the suitability of the proposed system in fabrication of spintronic devices, such as spin filter, spin transistor, etc.

Investigation of conduction mechanisms and permittivity-conductivity correlation in a Gd-based perovskite structure.

Currently, the development of perovskites has required a lot of attention for fundamental investigation and electronic devices. The present study reported the electrical conductivity and the dielectric properties of a GdCa2Cu3Oδ (GdCaCuO) system prepared via the solid-state reaction method. The X-ray diffraction results indicate that GdCaCuO crystallizes in the tetragonal perovskite structure. The studied compound reveals elevated dielectric permittivity and significant electrical phenomena including the influence of multiple conduction and relaxation mechanisms on the transport of charges. From the impedance results, it is observed that the electrical and dielectric properties of the studied compound are governed by the contribution of the grain and the grain boundary regions. The Nyquist results and the blocking factor (αR) were used to confirm the aforementioned properties. From the modulus results, we confirm again the presence of multiple relaxation processes and various types of polarization effects. The semiconductor character of the GdCaCuO ceramic is due to the activation of hopping conduction processes within the DC regime. Consequently, both the variable range hopping and the small polaron hopping models are used at low- and high-temperature ranges, respectively. At various temperatures, the conductivity spectra of the GdCaCuO ceramic conform to the double Jonscher power law. The power law behavior is attributed to the activation of hopping and tunneling conduction mechanisms. The presence of large dielectric dispersion in GdCaCuO is observed at low temperatures and decreases rapidly against increasing temperatures.

Andreev reflection in graphene nanoribbons induced by d-wave superconductors

Honeycomb and square lattices are combined as a tight-binding model to examine the Andreev reflection in graphene nanoribbons induced by a superconductor. The superconducting symmetry is assumed to be the d-wave. The zero-bias tunneling conductance peak, which is generally produced by the d-wave superconductor, is absent for the nanoribbons under conditions similar to those when a quantum wire is the normal conductor. For the anisotropic superconductivity, propagating modes appear in the superconductor even for biases below the top of the superconducting energy gap. Features appear in the conductance at the subgap population thresholds of these propagating modes as a finite-size effect of the lattice system. The surface Andreev bound states responsible for the zero-bias anomaly also cause transport resonances in the vicinity of the zero bias despite the aforementioned destruction of the anomaly. The conductance spectra revealing these excitation behaviors are fairly unchanged regardless of the presence of a hopping barrier at the interface with the superconductor. The insensitivity to the interface scattering highlights the fact that barrier-less situation cannot be realized for the model due to the heterogeneous lattice. Concerning specular Andreev reflection, the wavefunction parity gives rise to its blocking for single-mode zigzag-edged nanoribbons. The blocking is suppressed when the anisotropic superconductivity is asymmetric for the nanoribbons.

Molecular sensitised probe for amino acid recognition within peptide sequences

The combination of low-temperature scanning tunnelling microscopy with a mass-selective electro-spray ion-beam deposition established the investigation of large biomolecules at nanometer and sub-nanometer scale. Due to complex architecture and conformational freedom, however, the chemical identification of building blocks of these biopolymers often relies on the presence of markers, extensive simulations, or is not possible at all. Here, we present a molecular probe-sensitisation approach addressing the identification of a specific amino acid within different peptides. A selective intermolecular interaction between the sensitiser attached at the tip-apex and the target amino acid on the surface induces an enhanced tunnelling conductance of one specific spectral feature, which can be mapped in spectroscopic imaging. Density functional theory calculations suggest a mechanism that relies on conformational changes of the sensitiser that are accompanied by local charge redistributions in the tunnelling junction, which, in turn, lower the tunnelling barrier at that specific part of the peptide.

Synthesis and electrical properties of PANI/CeO2 nanocomposites: A study on the fluctuation-induced tunneling conduction

This study presents the preparation of PANI/CeO2 nanocomposites via in situ chemical oxidative polymerization in an acidic environment at subzero temperatures to optimize nanocomposite properties. Two compositions of PANI/CeO2, with 2% and 5% CeO2 nanoparticles, were synthesized and characterized structurally using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The temperature-dependent electrical conductivity was measured employing the four-probe technique and analyzed theoretically using the fluctuation-induced tunneling (FIT) model. The analysis of variance (ANOVA) confirmed the validity of the FIT model in elucidating charge transport mechanisms within the PANI/CeO2 composites.

Tunability of Andreev levels in a spin-active Ising superconductor/half-metal Josephson junction

We study the Andreev levels, supercurrent and tunnelling conductance in a clean Ising superconductor (ISC)/half-metal (HM)/ISC Josephson junction (JJ) with spin-active interfaces using Bogoliubov–de Gennes equations. We theoretically demonstrate the effect of spin mixing, spin flipping processes and spin–orbit coupling (SOC) of the ISC on Andreev bound states spectra, the current phase relation and tunnelling conductance in a transparent and opaque barrier limit. We witness an additional splitting of the Andreev levels due to the SOC of the ISC and transition for different barrier magnetic moments. Also, different φ-junctions can be achieved by tuning the strength of the barrier magnetic moment and spin mismatch angle. Moreover, a possible transition can also be achieved for a SOC stronger than the chemical potential of the ISC using suitable control parameters. The tunnelling conductance is found to be dependent on the spin mismatch angle. A finite subgap conductance is also observed, indicating different probabilities of Andreev reflected electrons and holes in the presence of SOC. Furthermore, anomalous Andreev levels are observed for different HM length scales, signifying their role in the tunability of the φ-phase JJ.

Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet—Andreev states

Light–matter coupling allows control and engineering of complex quantum states. Here we investigate a hybrid superconducting–semiconducting Josephson junction subject to microwave irradiation by means of tunnelling spectroscopy of the Andreev bound state spectrum and measurements of the current–phase relation. For increasing microwave power, discrete levels in the tunnelling conductance develop into a series of equally spaced replicas, while the current–phase relation changes amplitude and skewness, and develops dips. Quantitative analysis of our results indicates that conductance replicas originate from photon assisted tunnelling of quasiparticles into Andreev bound states through the tunnelling barrier. Despite strong qualitative similarities with proposed signatures of Floquet–Andreev states, our study rules out this scenario. The distortion of the current–phase relation is explained by the interaction of Andreev bound states with microwave photons, including a non-equilibrium Andreev bound state occupation. The techniques outlined here establish a baseline to study light–matter coupling in hybrid nanostructures and distinguish photon assisted tunnelling from Floquet–Andreev states in mesoscopic devices.

First-principles and experimental study of structural, electronic, and enhanced dielectric response in Bi2Ca1.95Sm0.05CoO6 nanoparticles

In this study, we synthesized Bi2Ca1.95Sm0.05CoO6 (BCSCO) by the Co-precipitation route. X-ray diffraction was used for structural analysis, which confirmed the monoclinic structure with space group P21/m. Here, we employ the CASTEP (Cambridge Serial Total Energy Package) approach, we conducted a theoretical investigation of the structure, electronic, and optical properties of BCSCO double perovskites. FTIR spectra, BCSCO presents three absorption bands that correspond to the Bi(Ca)-O, O-Co-O, and Co-O. The morphological study showing the agglomeration phenomenon has occurred in the synthesized sample. The AC conductivity and dielectric response have also been studied as a function of frequency (100 Hz-3 MHz) at different temperatures (100 °C-600 °C). Temperature-dependent dielectric relaxation was investigated, and employing the non-linear Debye fitting to determine the spreading factor and relaxation time. The maximum value of the dielectric constant is 2.4 × 106 at 600 °C. AC conductivity is examined at (100 °C-600 °C) using Jonscher’s power law. The model fitting shows the Overlapping Large Polaron Tunneling conduction mechanism for BCSCO. In order to explore the impact of grain barriers and interior, the Nyquist plot was utilized, and the results are inter-connected.

Describing the analog resistance change of HfOx-based neuromorphic synapses using a compact series trap-assisted tunneling and Ohmic conduction model

Changes in the resistance of Ti/HfOx synapses are known to be governed by a thin-oxide barrier associated with the oxidation/reduction of a Hf-rich conducting filament (CF). However, experimental characterization of the CF is challenging. Critical physical properties and processes, such as the barrier location, time-dependent thickness during analog pulsing, and the temperature-effect on current, need to be better established. In this work, a compact model based on Trap-Assisted-Tunneling and Ohmic transport is utilized to analyze the analog switching of HfOx synapses. The model agrees well with the experimentally observed current–voltage relation and its temperature dependence. The extracted barrier heights during analog pulsing are consistent with a barrier situated near the reset anode; the electrode is opposite to the Ti oxygen-reservoir layer. A Finite Element Analysis simulation, which incorporates oxygen-vacancy migration, independently supports this conclusion. The model further permits extraction of the barrier thickness in relation to the analog pulses.

Josephson-like Tunnel Resonance and Large Coulomb Drag in GaAs-Based Electron-Hole Bilayers.

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the millikelvin temperature range. The conductivity between the layers shows a sharp tunnel resonance at a density of 1.1×10^{10} cm^{-2}, which is consistent with a Josephson-like enhanced tunnel conductance. The tunnel resonance disappears with increasing densities and the two 2D charge gases start to show 2D-Fermi-gas behavior. Interlayer interactions persist causing a positive drag voltage that is very large at small densities. The transition from the Josephson-like tunnel resonance to the Fermi-gas behavior is interpreted as a phase transition from an exciton gas in the Bose-Einstein-condensate state to a degenerate electron-hole Fermi gas.

Study of Andreev reflection in topological insulator-based ferromagnet/ [formula omitted] wave superconductor structures

The Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory are used to calculate the tunneling conductance and shot noise in topological insulator-based ferromagnet/ dx2−y2+idxy mixed wave superconductor (TI-based FM/ dx2−y2+idxy SC) junctions. The Andreev reflection is investigated by analyzing the conductance and shot noise. Results show that the Andreev reflection process strongly depend on the magnetic gap m in FM, the gate potential U applied to the electrode on top of SC, and the magnitude of the ratio of Δ1/Δ0 with Δ0(Δ1) the absolute of pair potential of dx2−y2(dxy) component. The specular Andreev reflection can be enhanced by m as well as U. The conventional Andreev retro-reflection, however, can be enhanced by U but be suppressed by m. Which of the two reflections dominates the tunneling phenomenon exists a turning point at m = EF where both the tunneling conductance and differential shot noise become zero. This can be used as a criterion for distinguishing between the specular Andreev reflection and the Andreev retro-reflection in thin film TI-based FM/ dx2−y2+idxy SC structures. In addition, the dx2−y2+idxy pairing symmetry as well as the magnitude of magnetic gap can be determined by the experiment of scanning tunnel spectroscopy.

Tunneling conductance regulated by the electrostatic barrier in monolayer black phosphorene

We investigate the tunneling conductance of monolayer black phosphorene through double magnetic barriers modulated by the electrostatic barrier. This magnetic barrier is generated by two ferromagnetic strips deposited on monolayer phosphorene and can form parallel (P) and antiparallel (AP) structures. Applying a voltage to a ferromagnetic strip will create an electrostatic barrier. The transmission of P and AP magnetic structures is calculated using the transfer matrix. Tunneling conductance is given by Landauer–Büttiker theory. Our results show that under double electrostatic barriers modulation, the AP conductance of the system is zero except for sharp peaks, while the P conductance has a certain value, which implies a large tunneling magnetoresistance. However, in the case of single electrostatic barrier modulation, the conductance becomes flat. For the Fermi level in the valence band, the movement of the Fermi level leads to the severe mismatching of transmitted wave vectors in the barrier region, resulting a positive and negative oscillation magnetoresistance. This may be useful for designing memory using a two-dimensional electron gas system.

Calibrated microwave reflectance in low-temperature scanning tunneling microscopy.

We outline calibrated measurements of the microwave reflection coefficient from the tunnel junction of an ultra-high vacuum low temperature scanning tunneling microscope. The microwave circuit design is described in detail, including an interferometer for an enhanced signal-to-noise ratio and a demodulation scheme for lock-in detection. A quantitative, in situ procedure for impedance calibration based on the numerical three-error-term model is presented. Our procedure exploits the response of the microwave reflection signal due to the change of the tunneling conductance caused by sub-nm variation of the tunneling distance. Experimental calibration is achieved by a least-squares numerical fit of simultaneously measured conductance and microwave reflection retraction curves at finite conductance. Our method paves the way for nanoscale microscopy and spectroscopy of dielectric surface properties at GHz frequencies and cryogenic temperatures. This opens a promising pathway even for dielectric fingerprinting at the single molecule limit.

Structure, optical, charge transport mechanism, dielectric properties and leakage current analysis of Sm2MgMnO6 double perovskite

Structure, optical, dielectric, charge transport properties, and leakage current density of Sm2MgMnO6 prepared via auto–combustion method have been investigated in this study. The stoichiometry of the constituent elements in the prepared sample agrees with the expected values. The sintered sample exhibits a monoclinic crystal structure with space group P21/n. The crystal structure is distorted and tilted. The grains are irregular in shape and size and distributed non–uniformly. The average crystallite and grain size are 151 nm and 176.49 nm, respectively. The direct optical band gap (1.41 eV) is associated with octahedral distortion. The tangent of dielectric loss increases beyond ∼300 °C rapidly. The Havriliak–Negami formalism has been used to explain the dielectric properties. The material is relaxor ferroelectric in nature. The conduction of charge carriers follows non–overlapping small polaron tunneling (NSPT) conduction model. The ac activation energy decreases with frequency. The leakage current conduction is Ohmic in nature. The sample exhibits 1.53 × 10−6 Acm−2 leakage current density at 5.11 Vcm−1 and 150 °C, which follows the Schottky emission relation. The obtained results have been compared with the literature.