Elaboration of La (Sr/Na) Mn (Ti) O3 ceramic, structural, and morphological investigations, and contribution of direct and indirect interactions on transport properties

Abstract

The charge carrier's dynamics of La0.7(Sr5/6Na1/6)0.3Mn0.7Ti0.3O3 (LSNMTO) ceramic is conducted using the temperature and frequency dependences of the electrical conductivity and their scaling formalisms. The structural study indicates that LSNMTO crystallizes in a rhombohedral R3‾c perovskite structure with no detectible secondary phases. A phase transition from the high-temperature metallic behavior to the low-temperature semiconductor nature is observed from the electrical conductivity curve at TS-M = 415 K. Further, it is observed that the cation-anion-cation and the cation-cation interactions are present in the material, and play important role in governing the electrical behaviors of LSNMTO. From 200 K to 415 K, the Non-adiabatic Small Polaron Hopping is the predominant conduction process, although the Mott-Variable Range Hopping mechanism governs the conductivity at low temperatures. In the intermediate temperature range, the dynamic of the charge carriers is explained using the Shklovskii Efros model. The frequency-activated conductivity obeyed the universal laws (double-Jonscher and Jonscher laws). At high frequencies, the dispersion of the conductivity spectra is attributed to the presence of hopping and tunneling conduction processes. The Time-Temperature Superposition Principle (TTSP) is obeyed over a large temperature range from 160 K to 350 K. Below 160 K, the deviation from the TTSP is attributed to the coexistence of hopping and tunneling conduction mechanisms. Deviations from the Summerfield scaling and shifts of the isotherms to higher values on decreasing the temperature are due to the local structural disorder in LSNMTO. Therefore, the structural particularities of LSNMTO can result in diverse conduction pathways giving an increase to the deviations from the Summerfield scaling. The studied ceramic exhibits a very motivating maximum negative temperature coefficient of resistance NTCR = −13.36% which is significantly elevated as compared to previously investigated compounds.