Tunneling Electroresistance Research Articles

Enhanced tunneling electroresistance in ferroelectric tunnel junctions achieved through dual interface control

Interface engineering in ferroelectric tunnel junctions is a fertile playground to realize large tunneling electroresistance (TER) ratios. Here, the TER effect of Pt/La0.8Ca0.2MnO3 (LCMO)/BaTiO3 (BTO)/Nb: SrTiO3 (NSTO) ferroelectric tunnel junctions (FTJs) is investigated. It is found that the TER is enhanced by 2 orders of magnitude for the FTJ with a 0.5 nm (∼one unit cell) LCMO layer, as compared to its counterpart without LCMO. The observed effect is attributed to the NSTO/BTO and LCMO/BTO interfaces, both of which are responsive to ferroelectric polarization. These interfaces exhibit metallic or insulating behavior synchronously depending on the direction of the polarization in the BTO layer, resulting from the ferroelectric electric field effect and metal–insulator phase transition, respectively. This switching action with polarization reversal significantly increases the contrast in electrical resistance between the high resistance state (OFF state) and the low resistance state (ON state), therefore triggering a large TER. The increase in LCMO thickness (from 0.5 to 1 and 2 nm) leads to the decrease in TER, owing to the decreased barrier height/width at the NSTO/BTO interface, as revealed by the electron transport mechanism of Fowler–Nordheim (FN) tunneling.

Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures

The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InOx) layer, we enhance the TER ratio without increasing off-current, addressing the longstanding issue of low on-current in hafnia-based FTJs. Unlike prior approaches that led to leakage currents, our method optimizes tunneling behavior by leveraging the differential oxygen dissociation energy between InOx and hafnium zirconium oxide (HZO). This results in asymmetric modulation of the tunnel barrier, enhancing electron tunneling in one polarization state while maintaining stability in the opposite state. Furthermore, we explore the intrinsic characteristics of the FTJ at cryogenic temperatures, where reduced thermal energy minimizes leakage currents and allows the maximization of device performance. These findings establish a new benchmark for TER in hafnia-based FTJs and provide valuable insights for the integration of these devices into advanced cryogenic memory systems.Graphical

Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition method.

In this study, we compare the performance of ferroelectric memristor devices based on the fabrication method for the top electrode, focusing on atomic layer deposition (ALD) and physical vapor deposition techniques. We investigate the effects of these methods on the formation of the orthorhombic phase (o-phase) in HfAlOx (HAO) ferroelectric films, which is crucial for ferroelectric properties. The devices were fabricated with HAO films doped with 3.4% aluminum, followed by rapid thermal annealing at 700 °C. Our results demonstrate that the atomic layer deposition process forms a TiOxNy capping layer at the interface between the HAO film and the TiN top electrode, which promotes the o-phase formation. This capping layer effect leads to enhanced polarization characteristics, as evidenced by higher remnant polarization and tunneling electroresistance (TER) in the ALD-fabricated devices. The ALD method also results in a better interfacial layer condition, confirmed by a lower interfacial non-ferroelectric capacitance (Ci). Characterization techniques, including transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray diffraction. These structural advantages contribute to enhanced electrical performance, demonstrating neuromorphic applications. Here, our study highlights the significant impact of the ALD deposition method on enhancing the ferroelectric properties and overall performance of ferroelectric memristor devices, making it a promising approach for advanced memory and neuromorphic computing applications.

First principles electron transport in magnetoelectric SrRuO3/BaTiO3/SrTiO3/SrRuO3interfaces.

Recently, all-oxide ferroelectric tunnel junctions, with single or composite potential barriers based on SrRuO3/BaTiO3/SrTiO3(SRO/BTO/STO) perovskites, have drawn a particular interest for high density low power applications, due to their highly tunable transport properties and device scaling down possibility to atomic size. Here, using first principles calculations and the NEGFs formalism, we explore the electronic structure and tunneling transport properties in magnetoelectric SRO/BTO/mSTO/SRO interfaces, (m= 0, 2, or 4 unit cells), considering both the RuO6octahedra tilts and magnetic SRO electrodes. Our main results may be summarized as follows: i) The band alignment schemes predict that polarization direction may determine both Schottky barrier or Ohmic contacts form(STO)=0, but only Schottky contacts form(STO)=2 and 4 junctions; ii) The tunnel electroresistance and tunnel magnetoresistance ratios are evaluated at 0 and 300 K; iii) The most magnetoelectric responsive interfaces are obtained for them(STO)=2 heterostructure, this system also showing co-existent giant tunnel electroresistance and tunnel magnetoresistance effects; iv) The interfacial magnetoelectric coupling is not strong enough to control the tunnel magnetoresistance by polarization switching, in spite of significant SRO ferromagnetism.

A computational study of AlScN-based ferroelectric tunnel junction

Ferroelectric (FE) AlScN materials have been experimentally explored for memory and neuromorphic computing device applications. Here a computational study is performed to simulate the device characteristics and assess the performance potential of a ferroelectric tunnel junction (FTJ) based on AlScN. We parameterize an efficient k⋅p Hamiltonian from the complex band structure of AlScN from ab initio density-functional theory calculations to enable efficient quantum transport simulations of the FTJ device. Using a metal–FE–graphene structure enhances the barrier height modulation and the tunneling electroresistance (TER) ratio, compared to a metal–FE–semiconductor FTJ device structure. The barrier height modulation between ON and OFF states can reach ∼ 0.7eV with a FE polarization of 25 μC/cm2. Reducing the AlScN tunnel layer thickness is important for increasing the device ON current and reducing the read latency. The results indicate the importance of contact designs and FE layer thickness in the design of AlScN-based FTJ devices, and highlight the potential of AlScN FTJ for future memory device technology applications.

Reservoir Computing System with Diverse Input Patterns in HfAlO-Based Ferroelectric Memristor.

Ferroelectric memristors, particularly those based on hafnia, are gaining attention as potential candidates for neuromorphic computing. These devices offer advantages over perovskite-based ferroelectric memristors owing to their simpler structures, compatibility with complementary metal-oxide semiconductor technology, and low-power consumption characteristics. Additionally, improvements in ferroelectric memristor's performance, such as enhancing tunneling electro resistance (TER) and polarization retention, can be achieved using methods like aluminum doping and insulating film deposition. In this study, we implement a physical reservoir computing (RC) system utilizing the metal-ferroelectric-insulator-semiconductor-structured ferroelectric memristor based on Al-doped HfO2 as an artificial synapse. Specifically, we ensure the universality and diversity of the system by experimentally demonstrating a robust reservoir layer capable of handling various types of input pulses. To utilize the ferroelectric memristor in the reservoir layer of the RC system, we employ partial polarization switching of ferroelectric materials. We measure the retention loss characteristics of the device for pulse amplitude, interval, and width, and quantify the time constant values by fitting them to a stretched exponential function. Additionally, we validate the suitability of the fabricated device as an artificial synapse by mimicking various short-term plasticity functions of biological synapses. Furthermore, we experimentally demonstrate various applications related to learning and memory of the brain, such as image training and Pavlov's experiment, utilizing the short-term memory characteristics of the fabricated device. Lastly, we evaluate the robustness of the RC system under various input conditions by employing the fabricated device as a reservoir layer.

Giant Tunneling Electroresistance with Low Resistance-Area in Bilayer Nb2NF2 Nanosheet Ferroelectric Tunnel Junctions

Giant Tunneling Electroresistance with Low Resistance-Area in Bilayer Nb₂NF₂ Nanosheet Ferroelectric Tunnel Junctions

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic components and the underlying mechanisms for the polarity modulation of transistors are not yet fully understood. Here, we exploit both ferroelectric domain-based nonvolatile modulation of Fermi level in transitional metal dichalcogenides (MoS2) and quantum tunneling through nanoscale hexagonal boron nitride (h-BN). Our prototype devices, termed as vertical tunneling ferroelectric field-effect transistor, utilizes a Van der Waals MoS2/h-BN/metal tunnel junction as the channel. The Fermi level of MoS2 is bipolarly tuned by ferroelectric domains and sensitively detected by the direct quantum tunneling strength across the junction, demonstrating an impressive electroresistance ratio of up to 109 in the vertical tunneling ferroelectric field-effect transistor. It consumes only 0.16 fJ of energy to open a ratio window exceeding 104. This work not only validates the effectiveness of tailored tunnel barriers in manipulating electronic flow but also highlights a new avenue for the design flexibility and functional versatility of advanced ferroelectric memory technology.

Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect

This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a TiN/Hf0.5Zr0.5O2(HZO)/WOx/W ferroelectric tunnel junction (FTJ) device, with a particular focus on the role of the tungsten oxide (WOx) interface layer (IL). Structural examinations confirm the presence of the WOx IL, which significantly influences the FRS properties of the device. Electrical measurements indicate the devices exhibit stable and reproducible FRS characteristics with an ON/OFF ratio of 9.7, predominantly attributed to the tunneling electro-resistance (TER) effect driven by the ferroelectric polarization. Comprehensive numerical simulations, incorporating the nucleation-limited switching model and Simmons tunneling mechanism, provide detailed insights into how the WOx IL and the trapped charges at the HZO/WOx interface affect polarization switching mechanisms and the electronic potential barrier profile. These findings underscore the importance of interface effects in HfO2-based FTJs and advance the understanding of the TER mechanism in multilayer ferroelectric systems.

Enhancement of tunneling electroresistance in metal/two-dimensional ferroelectric tunnel junctions: route for polarization-modulated interface transport

In fabricating ferroelectric tunnel junction (FTJ) devices, it is essential to employ low-resistance metals as electrodes interfacing with two-dimensional (2D) ferroelectric materials. For FTJs with a top contact configuration, two interfaces for charge transport are present, namely the vertical interface between the metal electrode and the 2D ferroelectric material, and the lateral interface between the electrode and the central scattering region. These interfaces significantly influence the tunneling electroresistance (TER) of FTJs. However, there exists a notable deficiency in comprehension concerning the physics of charge transport at the interface. In this work, we explore the interface transport properties in FTJs featuring a top contact configuration between metal and the typicalα-In2Se3monolayer. By employing the non-equilibrium Green's function method, we observe a TER ratio of1.15×105% for the Pd top contact interfacing with anα-In2Se3monolayer. The significant TER effect is attributed to polarization-controlled interface transport, which is further elucidated through an analysis of the transport mechanisms influenced by the out-of-plane polarization ofα-In2Se3at the vertical interface and the in-plane polarization at the lateral interface. This investigation of the fundamental physical mechanisms of polarization-controlled interface transport demonstrates significant potential for enhancing non-volatile memory devices.

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.

Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications.

Achieving higher-order multistates with mutual interstate switching at the nanoscale is essential for high-density storage devices; yet, it remains a significant challenge. Here, we demonstrate that integrating A-type antiferromagnetic semiconductors sandwiched between ferroelectric layers is an effective strategy to achieve high-performance multistate data storage. Taking the Sc2CO2/VSi2P4 bilayer (bi-VSi2P4)/Sc2CO2 van der Waals multiferroic heterostructure as an example, our first-principles calculations show that by switching the polarization direction of the upper and bottom ferroelectric Sc2CO2 layers, antiferromagnetic bi-VSi2P4 can exhibit four distinct states with different band structures. The intriguing band structure engineering stems from the polarization-field-induced band shift and interface charge transfer. Accordingly, the proposed Sc2CO2/bi-VSi2P4/Sc2CO2-based multiferroic device can achieve four different resistance states, accompanied by fully spin-polarized currents and giant tunneling electroresistance ratios. Our results propose a viable strategy for realizing nonvolatile electrical control of antiferromagnets at the nanoscale and provide insights into the development of advanced memories.

Giant Tunneling Electro‐Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism

AbstractUltrathin ferroelectric tunnel junctions (FTJs) hold considerable promise for next‐generation, high‐speed, low‐power, and high‐density nonvolatile memory applications. Achieving a substantial tunneling electro‐resistance (TER) remains a challenge as the ferroelectric layer is thinned to nanoscale dimensions, often resulting in a diminished or lost polarization. An innovative interface barrier gain mechanism is introduced, employing interface electronic state modulation to precisely control the size of an additional interface barrier. This strategy lessens the dependency of the tunneling barrier on ferroelectric polarization strength, facilitating a remarkable TER even at ferroelectric thicknesses as minimal as ≈1 nm. The focus is on composite FTJs using In2Se3/MTe2 (M = Mo, W), where the inclusion of an MTe2 monolayer disrupts the asymmetric electrode configuration. The weak ferroelectric polarization reversal of the In2Se3 monolayer effectively modulates the electronic state coupling at the In2Se3/MTe2 interface. This modulation leads to variations in the width and height of the Schottky barrier at the heterojunction‐electrode interface corresponding with the ferroelectric polarization reversal, establishing a beneficial Ohmic contact in the “on” state and resulting in an exponential TER increase up to 5.4 × 106%. This work introduces a universal mechanism to overcome the thickness limitations traditionally associated with enhancing TER, marking a significant advancement in the development of ultrathin ferroelectric nonvolatile devices.

High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure

High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the interface between them introduces complex interactions that could impact the device's performance. In this work, based on the first-principles method, we simulate several 3D metal–2D ferroelectric material contact systems by utilizing different 3D metals in contact with the 2D ferroelectric monolayer CuInP2S6 (CIPS). By calculating the electronic structures of the systems, we find that the Cd(001)–CIPS configuration is the most stable structure, followed by the Ag(111)–CIPS and Au(111)–CIPS systems. Both the Cd(001)–CIPS and Ag(111)–CIPS systems undergo a transition from Schottky to Ohmic contact. Finally, we theoretically design a ferroelectric tunnel junction (FTJ) based on the Cd(001)–CIPS contact system, achieving a tunneling electroresistance ratio of 2.394×105% and a remarkably low resistance–area product of 0.78 Ω·μm2, which makes the proposed FTJ superior to the conventional 3D FTJ. This work provides some insights for the design of nonvolatile storage devices.

Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing

Recently, ferroelectric memory utilizing hafnium oxide has emerged as an attractive option compared to existing memory technologies, primarily due to its scalability and energy-efficient advantages. Among them, hafnium zirconium oxide (HZO) is examined for its short-term memory characteristics to achieve a reservoir computing system known to exhibit remarkable polarization properties, being able to switch between distinct polarization states under the influence of an electric field. These unique properties are of utmost importance in ferroelectric memory applications, where they play a pivotal role in the storage and retrieval of binary data. In this study, we identify and experiment with the electrical characteristics of a ferroelectric tunnel junction (FTJ) device with a metal-ferroelectric-semiconductor (MFS) structure using TiN as the top electrode and HZO as the ferroelectric layer. Moreover, we assess the performance of the device by evaluating its maximum 2Pr (remnant polarization) and tunneling electro resistance (TER) values in different conditions of cell area. Furthermore, we analyze and show short-term memory (STM) characteristics and synaptic properties with 5 cycles of potentiation and depression under conditions of stable dynamic range by coordinating identical and incremental pulses. In the case of incremental pulses (>95 %), the MNIST pattern recognition accuracy is higher than in the case of identical pulses (>94 %). Through a sequence of procedures, the synaptic characteristics of FTJs are confirmed to assess their suitability for use as an artificial synaptic device.

Band Alignment Engineering in 2D Ferroelectric Van der Waals Heterostructures for All‐In‐One Optoelectronic Architecture

Abstract2D van der Waals (vdW) heterostructures consisting of vertically stacking atomically thin semiconductors with different band structures provide a flexible platform to design integrated electronic and optoelectronic devices with multi‐functionalities. However, the realization of device multifunctionality requires the heterostructures with tunable band alignments. Here an efficient strategy is proposed by constructing 2D vdW ferroelectric semiconductor heterostructures composed of atomically thin ferroelectrics and semiconductors to achieve this goal. These calculated results indicate that the local built‐in electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the heterostructures, leading to 36 potential band‐alignment transition pathways. Using SnS/In2Se3 vdW heterostructure as a prototype example, a reversible switching from high‐resistance to low‐resistance state is demonstrated by the band‐alignment transition from type‐II to type‐III driven by ferroelecric polarization switching, consequently leading to giant tunneling electroresistance (TER) ratio as high as 1012%. Moreover, the heterostructure with the momentum‐space matching band structure and in‐plane anisotropy exhibits broadband photoresponse from near‐infrared to ultraviolet regions and excellent polarization sensitivity with the dichroic ratio up to 10.3. The ferroelectric polarization‐dependent conductance state and photoresponse in the heterostructures make them large potential for the realization of all‐in‐one optoelectronic architecture in artificial vision system.

Orientation-dependent tunneling electroresistance in Pt/Pb(Zr,Ti)O3/Nb:SrTiO3 ferroelectric tunnel junctions

Orientation anisotropy is a well-known essential character for polarization characteristics of ferroelectric materials, which has been widely investigated in conventional ferroelectric random access memories. In this work, we study the effects of orientation on the tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs). Rhombohedral Pb(Zr[Formula: see text],Ti[Formula: see text])O3 (PZT) that has the polar axis along the [Formula: see text] orientation is adopted as potential barriers and two kinds of FTJs that are composed of (001)- and (111)-oriented PZT barriers and Nb:SrTiO3 (Nb:STO) electrodes, respectively, are fabricated. The (111)-oriented Pt/PZT/Nb:STO FTJ exhibits a giant ON/OFF ratio of [Formula: see text], about 30 times that of the (001)-oriented device, due to the lowered PZT barrier in the ON state and the widen Schottky barrier in the OFF state based on current and capacitance analyses. In addition, compared to the (001)-oriented device, the (111)-oriented FTJ shows a sharper and faster switching between the ON and OFF states according to the nucleation-limited-switching dynamics model, giving rise to good linearity in memristive behaviors for synaptic plasticity and reliable retention and endurance properties for the resistance switching. The improved TER properties are ascribed to larger effective polarizations and 180∘ switching in the (111)-oriented PZT barrier. These results facilitate the design and fabrication of high-performance FTJ devices with the optimization of crystallographic orientation and polarization switching characteristics.

Significantly enhanced tunneling electroresistance in two-dimensional ferroelectric tunnel junctions realized by reversible Schottky-Ohmic contact switching

Significantly enhanced tunneling electroresistance in two-dimensional ferroelectric tunnel junctions realized by reversible Schottky-Ohmic contact switching

Al2O3/SnC heterostructure: Physical properties, regulation effect and device design

Two van der Waals (vdW) heterostructures between Al2O3 and SnC monolayers are constructed by the Generalised Lattice Matching (GLM) method. We calculate the elastic constants of monolayers and heterostructure and find that the heterostructures show larger Young’s modulus (220−234) N/m compared with Al2O3 (SnC), the reasonable Poisson’s ratio is about 0.3 and gravity-induced bending is the order of 104, which is comparable to graphene. The electronic properties, optical absorption coefficient and transmission properties of the heterostructure also have been investigated. Some important discoveries can be obtained: The Al2O3/SnC heterostructure shows an indirect bandgap (Eg) semiconductor with 1.70 eV and type II band arrangement when the ferroelectric polarization of Al2O3 points to SnC. While the polarization direction of Al2O3 is opposite, the Eg is zero. The physical properties are manipulated by some conditions (strain and electric field), leading to transitioning between Type II and I semiconductors, semiconductors and metal can be experienced. Moreover, the heterostructures prefer the higher light adsorption coefficient (105 cm−1) compared to monolayers. The transport properties of the Al2O3/SnC linked by two silicene electrodes show an excellent tunnel electroresistance (TER) effect with 108, moreover, the negative differential resistance (NDR) effect and switching effect also can be observed.