Particle contamination and etch depth on silicon wafers etched in and plasmas are examined as a function of five critical plasma parameters using response surface methodology. The explored plasma parameters are 13.56 MHz RF power, 100 kHz wafer electrode power, pressure, process gas flow rate, and etch time. Experiments are conducted in a modified Tegal MCR‐1 single‐wafer reactor operated in the triode mode. For both chemistries, particle contamination is a predictable function of the externally controlled plasma parameters. Particle deposition and etch depth have a linear dependence on 13.56 MHz RF power, 100 kHz power, and etch time. Also, the particle deposition and etch depth have a quadratic dependence on process gas flow rate. In the pressure range explored, particle deposition on the wafers is independent of pressure. Additionally, in each chemistry, the behavior of particle deposition and etch depth are similar suggesting that the deposition and etch mechanisms are also similar. In the case, Auger and energy dispersive x‐ray chemical analysis of the particles reveal the presence of silicon, fluorine, oxygen, sulfur, and aluminum. In the case, particles contain only silicon with carbon and oxygen on the surface.