Abstract
Current-voltage characteristics of ultrathin silicon on insulator n-type MOSFETs (metal oxide semiconductor field effect transistors) operating in ballistic transport mode are given. They are derived with the similar guiding principle as that used in quantum point contact. The obtained result is independent of channel length, and is expressed with elementary parameters without depending on ambiguous carrier mobility. They show triode and pentode operational modes similarly to the normal MOSFET. When inversion carriers are degenerate, saturation current is independent of temperature and is proportional to the carrier density to the power of 1.5.
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