Trench Gate Insulated Gate Bipolar Transistor Research Articles

Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters

As a classical insulated gate bipolar transistor (IGBT) structure, the trench-gate field-stop (FS) IGBT has been widely used. For more convenient application, physics-based trench-gate FS IGBT models have received great attentions due to its effectiveness in simulating key device properties. However, current IGBT modeling studies for this popular IGBT chip seldom investigate the depletion layer behavior under the trench-gate structure. This article first derives the physics-based miller capacitance formula for the trench-gate structure according to finite element method (FEM) simulation. Another haunting issue for these physics-based IGBT models is that the intrinsic device parameters are difficult to be extracted appropriately. Thus, an FEM FS IGBT model is established in Sentaurus TCAD as the benchmark. Then, an improved parameter extraction procedure for a Fourier-series-based (FSB) IGBT model is proposed based on the improved miller capacitance formula. By the particle swarm optimization algorithm, key device parameters for the FSB IGBT model can be successfully extracted by fitting the simulated waveforms to those by FEM simulation at a randomly selected turn-off operating condition. Parameters extracted through the proposed procedure using the FSB IGBT model with the improved miller capacitance formula are very close to the device parameters of the FEM model. More importantly, the reliability and the robustness of the extracted parameters are further validated by comparing the waveforms of FSB model with those of FEM model at different operating conditions.

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.

Analysis of junction capacitance characteristics of trench gate IGBT

Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

In this paper, a new trench-gate field-stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench-gate field-stop IGBT. An npn structure is introduced to the gate trench in order to reduce the Miller capacitance and gate-collector charge through the introduction of the two diode capacitances in series. The simulation results demonstrate that the proposed structure exhibits a significant improvement in the following two aspects, without degrading the other performances. The first is the reduction of the Miller capacitance by 92.0% and 48.3% at Vce = 0 V and Vce = 20 V, respectively and the second is the reduction in gate-collector charge by 66.7%.

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (VON) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss (EOFF) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior VON-EOFF trade-off and a low oxide field.

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

A new gate structure in the trench-gate insulated-gate bipolar transistor (IGBT) design is proposed and analyzed for power-loss reduction and the suppression of electromagnetic-interference (EMI) noise. Although the turn-off loss and the ON-state voltage drop ${V}_{\text {ce(sat)}}$ are improved by the injection-enhancement (IE) effect, the IE effect caused dynamic avalanche that limits the turn-off loss reduction. In addition, EMI noise is induced by high dI / dt and large surge current due to the negative gate capacitance. This article shows that the dynamic avalanche and the negative gate capacitance can be suppressed by the management of the electric field concentration and hole current flow around the trench gate by the proposed alternated trench-gate (AT) IGBT structure, and both low power loss and good switching controllability can be obtained. The device simulation results show that the AT-IGBT improves the turn-on surge current ${I}_{\text {surge}} - {V}_{\text {ce(sat)}}$ tradeoff compared with the conventional IGBTs.

Surface Buffer IGBT for High Total Performance

A new structure in trench-gate insulated gate bipolar transistor (IGBT) design is proposed and analyzed not only for power loss reduction but also for long-term stability and suppressing electromagnetic interference (EMI) noise using a device simulation. Although turn-off loss and ON-state voltage drop ${V}_{\text {ce(sat)}}$ are improved by injection enhancement (IE) effect, IE effect causes dynamic avalanche that limits turn-off loss reduction and degrades long-term stability by the charge trap at the trench gate oxide interface. In addition, hole current around the gate induces EMI noise due to the negative gate capacitance. This article shows that the proposed surface buffer (SB) IGBT suppresses dynamic avalanche and negative gate capacitance maintaining low power loss by covering the trench gate bottom and hole evacuation from the pMOS channel.

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device. The threshold voltage and breakdown voltage decreased after irradiation, whereas the collector leakage current increased. Turn-on and turn-off switching times decreased and increased, respectively, with the irradiation dose. The irradiation-induced changes in the electrical characteristics can be attributed to the buildup of the positive oxide-trapped charges in the gate oxide by gamma irradiation. The evaluated characteristics data were compared with the data for gamma-irradiated planar-gate IGBTs reported in the literature. It was found that a significant degradation occurred in the shift of the threshold voltage and switching times for trench-gate IGBTs.

전기자동차용 이중 게이트 구조를 갖는 전력 IGBT소자의 전기적인 특성 분석

본 논문에서는 플래너 게이트 및 트렌치 게이트의 구조를 동시에 가지고 있는 1200V급 이중 게이트 IGBT 소자를 제안함과 동시에 전기적인 특성을 분석하였으며, 분석된 결과를 가지고 플래너 게이트 및 트렌치 게이트 IGBT 소자의 전기적인 특성과 비교 분석하였다. 이중 게이트 IGBT 소자를 설계하는데 있어 문턱전압 및 온 상태 전압 강하에 영향을 주는 P-베이스 영역에 있어 P-베이스에 깊이는 트렌치 게이트 소자 영역에 영향을 주며, P-베이스에 너비는 플래너 게이트 소자 영역에 영향을 주는 것을 확인할 수 있었다. 본 연구에서 제시한 이중 게이트 IGBT 소자의 전기적인 특성인 항복전압은 1467.04V, 온 전압 강하는 3.08V, 문턱전압은 4.14V의 특성을 나타내고 있다. IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

ABSTRACT Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

고전압 IGBT SPICE 시뮬레이션을 위한 모델 연구

본 논문에서는 SPICE 시뮬레이션을 위한 고전압 insulated gate bipolar transistor(IGBT)의 개선된 모델을 제안하였다. IGBT를 부속 소자인 MOSFET과 BJT의 조합으로 구성하고, 각 소자의 각종 파라미터 값을 조절하여 기본적인 전류-전압 특성과 온도변화에 따른 출력특성의 변화 등을 재현하였다. 그리고 비선형적인 리버스 트랜스퍼 커패시턴스 등의 기생 커패시턴스의 전압에 따른 변화를 높은 정확도로 재현하기 위해, 복수의 접합 다이오드, 이상적인 전압 및 전류 증폭기, 전압제어 저항, 저항과 커패시터 수동소자 등을 추가하였다. 본 회로모델을 1200V급의 트렌치 게이트 IGBT의 모델링에 이용하였으며, 실측자료와 비교하여 통해 모델의 정확도를 검증하였다. In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

High-Voltage, High-Performance Switch Using Series-Connected IGBTs

A high-performance, high-voltage switch obtained by a series connection of 3300 V insulated gate bipolar transistor (IGBT) modules is presented. The correct voltage sharing between the devices is ensured by the presence of a simple and reliable auxiliary circuit, which acts as a feedback on the gate terminal. A comparison in terms of power losses, output currents, and switching performances to a single 6500 V IGBT module is also presented. An extended experimental analysis demonstrates strong advantages in terms of switching losses (up to 67%) and current and voltage gradients. Use of trench-gate IGBTs, available in the 3300 V size but not in the 6500 V one, allows extra performance to the series connection circuit, as experimental results show. Such circuit is suitable to increase performances of high-power, high-voltage inverters used in railway traction, in high-voltage energy distribution lines, and in high-power solid-state klystron modulators.

Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules

Recently much research has been focused on increasing the functionality and output power density per unit area in power electronic modules without increasing board space. In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ce</sub> (sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints.

Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs

A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.

Shielding region effects on a trench gate IGBT

In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06V in the shielded trench gate IGBT.

A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 and a tough short-circuit capability of more than 10 . The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.

A Bidirectional Isolated DC–DC Converter as a Core Circuit of the Next-Generation Medium-Voltage Power Conversion System

This paper describes a bidirectional isolated dc-dc converter considered as a core circuit of 3.3-kV/6.6-kV high-power-density power conversion systems in the next generation. The dc-dc converter is intended to use power switching devices based on silicon carbide (SiC) and/or gallium nitride, which will be available on the market in the near future. A 350-V, 10-kW and 20 kHz dc-dc converter is designed, constructed and tested. It consists of two single-phase full-bridge converters with the latest trench-gate insulated gate bipolar transistors and a 20-kHz transformer with a nano-crystalline soft-magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full-bridge converters. The overall efficiency from the dc-input to dc-output terminals is accurately measured to be as high as 97%, excluding gate drive and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC-based power switching devices. Loss analysis clarifies that the use of SiC-based power devices may bring a significant reduction in conducting and switching losses to the dc-dc converter. As a result, the overall efficiency may reach 99% or higher

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n − drift region.

Temperature Effects on Trench-Gate Punch-Through IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50/spl deg/C to 125/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms.

Turn-off performance evaluations of trench-gateIGBT under soft switching

Turn-off performance evaluations of trench-gate insulated gate bipolar transistors (IGBTs) under a zero voltage soft switching commutation scheme are presented. It is noted that the developed trench-gate IGBT has lower turn-off power losses due to soft switching in addition to having a low conduction loss.