Abstract
In this paper, a new trench-gate field-stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench-gate field-stop IGBT. An npn structure is introduced to the gate trench in order to reduce the Miller capacitance and gate-collector charge through the introduction of the two diode capacitances in series. The simulation results demonstrate that the proposed structure exhibits a significant improvement in the following two aspects, without degrading the other performances. The first is the reduction of the Miller capacitance by 92.0% and 48.3% at Vce = 0 V and Vce = 20 V, respectively and the second is the reduction in gate-collector charge by 66.7%.
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