Abstract
Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.
Highlights
Insulated gate bipolar transistor (IGBT) is a composite device which combines the structure of field effect transistor and bipolar transistor, and absorbs the advantages of both
The new generation of trench gate field termination IGBT has achieved a leap in power grade and comprehensive performance, and gradually occupied the dominant position of IGBT application
Due to the structural characteristics of trench gate field termination type, which is different from the traditional planar gate type, the two-dimensional distribution of carriers in the base region and the influence of injection and depletion layer broadening on junction capacitance are different
Summary
Insulated gate bipolar transistor (IGBT) is a composite device which combines the structure of field effect transistor and bipolar transistor, and absorbs the advantages of both. Due to the structural characteristics of trench gate field termination type, which is different from the traditional planar gate type, the two-dimensional distribution of carriers in the base region and the influence of injection and depletion layer broadening on junction capacitance are different. This method of directly adopting the existing model will inevitably bring great deviation[45]. The calculation method considers the influence of different collector-emitter voltages on the width of base depletion layer in IGBT transient process, which causes the change of internal gate junction capacitance of IGBT and improves the accuracy of IGBT transient model
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