Trap Levels Research Articles

The Effects of Acute and Chronic Alcohol Administration and Withdrawal on Bone Microstructure, Mechanical Strength, and Remodeling Protein Expression and Their Relation to an Antioxidant and FGF23 In Vivo.

Alcohol's detrimental effects on bone health are well established, yet some literature suggests moderate consumption may offer benefits. With alcohol use on the rise, we investigate the impact of acute and chronic alcohol administration, along with withdrawal, on male Wistar rat femurs. We observed a transient cortical thickness increase with acute alcohol (AA) compared to chronic exposure (CA) but no significant changes in trabecular parameters or mechanical properties. High osteocalcin and osteopontin expression levels were noted in AA, alongside elevated RANKL expression. Conversely, CA showed low TRAP levels. FGF23 expression significantly increased during alcohol withdrawal (AW), while GPX decreased after chronic exposure but rose during withdrawal. Although mechanical strength changes were insignificant, biochemical shifts suggest alcohol exposure promotes bone resorption, reduces antioxidant protection, and potentially hampers active vitamin D and phosphate reabsorption via FGF23 upregulation.

Discrete trapping levels of localized states in amorphous silicon nitride

The spectrum of localized hole states (traps) in amorphous silicon nitride, a-Si3N4, is experimentally studied using the method of thermally stimulated depolarization. The experiment is compared with theoretical calculations using three models of the energy spectrum of traps: discrete spectrum (monoenergetic trap), continuous spectrum, and Gaussian trap distribution. The experiment is quantitatively described by a model of a discrete spectrum of traps with an energy of 1.15 eV and a width of no more than 0.01 eV. In the case of a continuous and Gaussian spectrum of traps, the contribution to depolarization is made by the deepest traps. The blurring of the trap energy level in a-Si3N4 due to the absence of long-range order (fluctuations in the Si–N bond length and fluctuations in the N–Si–N and Si–N–Si angles) does not exceed 0.01 eV.

Effect of Acceptor Traps in GaN Buffer Layer on Source/Drain Contact Resistance in AlGaN/GaN High Electron Mobility Transistors

As‐grown GaN buffer layers have a significant electron concentration, which causes an increase in leakage current and a decrease in the breakdown voltage, VBR, of GaN High Electron Mobility Transistors (HEMTs). To prevent this, deep acceptor traps of density, NAT, are added to the GaN layer during growth. While a study on the effect of NAT on VBR is available in the literature, that on the effect of NAT on contact resistance, Rc, of source/drain contacts is lacking. Herein, the following is established using technology computer‐aided design simulations calibrated with measured current–voltage characteristics of ungated AlGaN/GaN structures: 1) Rc increases significantly with NAT and with the depth of the trap level from the conduction band. For trap level 2.5 eV below the conduction band, Rc doubles for an increase in NAT from 1 × 1016 to 5 × 1017 cm−3. 2) The variation of Rc with temperature is non‐monotonic. Over a temperature range of 300–450 K, Rc is nearly constant with temperature for NAT = 1 × 1016 cm−3 and decreases by 20% for NAT = 5 × 1017 cm−3, when traps are 2.5 eV below the conduction band. Also, the degradation of the transfer and output characteristics of GaN HEMTs due to a notable increase in Rc due to NAT is investigated.

Spectral characterization of a Cryo-Cooled CO laser operating with CO2 laser gas mixture

This study explores the emission spectra and performance characteristics of a cryo-cooled CO laser system operating with CO2 laser gas mixture under various operating conditions, viz., N2 free gas mixture, different coolant temperatures and in grating tuned configuration. The narrow operational window in case of N2 free gas mixture, increased output power and richer emission spectrum obtained with the addition of N2 gas indicates enhanced discharge stability and efficient excitation in presence of Nitrogen. The emission spectrum revealed shifting of the trapping levels towards lower vibrational quantum number with reducing coolant temperature and the same was also corroborated by theoretical calculations. No lasing was observed for vibrational levels V>15 which is attributed to the higher partial pressure of oxygen inherently present in the gain medium formed due to dissociation of CO2. The system lased on more than 20 transitions in grating tuned configuration with power exceeding 100mW on several lines. The presence of higher concentration of O2 in the discharge prevents carbon deposition − a common issue in CO lasers. This study underscores the significance of this unconventional CO laser system offering reliable operation in the 5 µm wavelength region without the usage of extraneous CO gas.

Blue-emitting perovskite nanocrystals with enhanced optical properties through using NaBH4

APbX3-type [A = CH3NH3 + (MA+), NH2CH=NH2 + (FA+), X = Cl–, Br–, I–] organic–inorganic perovskite nanocrystals (PeNCs) have superior optical properties, such as emission with a narrow full width at half maximum and emission color tunability over the entire visible range. However, blue-emitting PeNCs [APb(Br/Cl)3] exhibit low photoluminescence quantum yields owing to Cl defects, hindering their practical applications. The Cl defects induce nonradiative recombination caused by the trap levels formed deep in the band gap. Herein, we report the preparation of blue-emitting PeNCs that exhibit excellent optical properties by using NaBH4 to decrease the number of Cl defects.

Hints to lightning breakdown enhancement for synthetic ester insulating oil: Unraveling the impact of molecular chain length on electron structural parameters under electric field stress

The high flash point and biodegradability of synthetic ester insulating oil offer transformers both operational stability and environmental protection. However, its poor lightning breakdown characteristics under long oil gaps and inhomogeneous electric field often lead to rapid streamer discharges, posing challenges and limits to the use of synthetic ester insulating oil and hinders the development of low-carbon, eco-friendly high voltage power transformers. To address this issue, we propose improving the lightning breakdown characteristics through molecular chain length design. Using density functional theory, time-dependent density functional theory, and wave function analysis, we investigate how microscopic factors like molecular polarity, discharge active sites, frontier orbitals, traps, ionization and electron affinity, and excitation processes influence macroscopic discharge characteristics. Our findings show that under an electric field, chain length is positively correlated with electron transfer, enhancing charge polarization. Chain length also correlates positively with dipole moment, facilitating the formation of space charge centers. While chain length minimally affects discharge active sites, the electric field can intensify their formation. Additionally, a longer chain length decreases the energy gap, increasing electron trap levels more than hole trap levels, thus capturing charges longer. Chain length is negatively correlated with ionization energy, promoting electron impact ionization, and has little effect on the excitation energy of S(0) → S(1), making excitation under high electric fields unlikely.

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

In this study, we examined the gate leakage characteristics of normally off pGaN/AlGaN/GaN HEMTs through a simulation study. The Fowler Nordheim Tunneling (FNT) mechanism mainly contributes to the gate leakage process as indicated by the Technology Computer-Aided Design (TCAD) simulation. However, at low bias, the FNT undercalculates the leakage current since the electric field is low in this region. This extra leakage current component at this low bias region can be attributed to the presence of surface traps. Trap-assisted tunneling current along with the FNT current can explain forward leakage characteristics of the pGaN HEMTs. Our TCAD simulations were matched with the experimental data for five devices from four different research groups to support this claim. Using TCAD simulations, we have been able to analyze several device parameters including the various potential drops inside the gate stack structure. We were able to identify some of the trap levels and compare them to the dominant defects expected to be present in the pGaN cap layer. Furthermore, we studied the effects of different device parameters on the gate leakage process in the pGaN HEMT.

Thermoluminescence response of carbon ion beam irradiated LiCaAlF6: Tb phosphor

Accurate measurement of the dose delivered to patients is crucial in any radiation therapy, including C ion beam radiotherapy, to ensure effective treatment and minimize the risk of damage to healthy tissues. The accessibility of thermoluminescence (TL) - based materials for carbon ion beam dosimetry continues to be constrained. With the aim of this, an investigation has been done to study the TL properties of the Terbium (Tb) doped LiCaAlF6 phosphor following irradiation with C ion beam. The LiCaAlF6: Tb phosphor has been synthesized using melting method in argon gas atmosphere. TL glow curves has been analyzed on exposure to carbon ion beams at energies of 85 MeV and 50 MeV within the fluence range of 109 - 1012 ions/cm2. The TRIM code, relying on Monte Carlo simulation, has been employed to compute parameters such as absorbed dose, ion range, and energy loss. The Tb-doped LiCaAlF6 phosphor exhibits a glow curve structure with distinctly resolved peaks at 130 °C and 325 °C. Notably, the TL intensity has been significantly increased by 105 times than that of undoped LiCaAlF6. This enhancement is attributed to the generation of a high density of Tb-associated defects within the energy band gap. The TL enhancement has been elucidated based on charge compensation mechanism. Further, TL glow curve shape and structure remain consistent across different energies, i.e., 85 and 50 MeV C ion beams, indicating an energy-independent behavior of this phosphor. Nevertheless, the TL intensity at 85 MeV is higher compared to that at 50 MeV. Detailed dosimetry properties have been investigated for 85 MeV C ion beams within the fluence range 2x109-5x1012 ions/cm2. The phosphor exhibits a sublinear dependence against dose for the studied fluence range with no discernible shift in peak position. The favorable outcomes include low fading during the initial days of storage time and batch homogeneity. TL glow curve analysis indicate the formation of trapping level in the range of 0.90–1.72eV within the band gap of the phosphor which are responsible for TL process. The phosphor's simple glow curve structure, minimal fading, consistent batch homogeneity and high stability of the glow curve suggest that the material can be explored for C ion beam dosimetry application.

3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β-Ga2O3 HJD with field plate assisted deep mesa (FPDM) termination was fabricated using a self-aligned technique to etch the deep mesa to a depth of 9 μm, thereby reducing electric field crowding at the anode edge. In addition, a thick dielectric is deposited to fill the trench, facilitating the utilization of a field plate to further reduce the electric field at the anode edge. TCAD (Technology Computer Aided Design) simulations show significant suppression of electric field crowding at the anode edge. The fabricated HJD exhibits a high current swing of ∼1010 over a temperature range from 25 °C to 175 °C. The specific on-resistance (Ron,sp) is extracted to be 3.9 mΩ cm2, and the breakdown voltage is 3.42 kV with the FPDM termination. These conduction and blocking characteristics lead to a high power figure of merit of 3 GW/cm2, which is one of the highest among multi-kilovolt β-Ga2O3 diodes. Furthermore, the off-state current leakage mechanism of the HJD under a reverse bias up to 2000 V was investigated. The fitted results reveal that the leakage current is primarily dominated by Poole–Frenkel (PF) emission, with the trap level of PF extracted to be 0.36 eV below the conduction band of NiO.

Elevated neutrophil extracellular trap levels in periodontitis: Implications for keratinization and barrier function in gingival epithelium.

To explore the levels of neutrophil extracellular traps (NETs) in patients with periodontitis and examine their effects on keratinization, barrier function of human gingival keratinocytes (HGKs) and the associated mechanisms. Saliva, gingival crevicular fluid (GCF), clinical periodontal parameters and gingival specimens were collected from 10 healthy control subjects and 10 patients with stage II-IV periodontitis to measure the NET levels. Subsequently, mRNA and protein levels of keratinization and barrier indicators, as well as intracellular calcium and epithelial barrier permeability, were analysed in HGKs after NET stimulation. The study showed that NET levels significantly elevated in patients with periodontitis, across multiple specimens including saliva, GCF and gingival tissues. Stimulation of HGKs with NETs resulted in a decrease in the expressions of involucrin, cytokeratin 10, zonula occludens 1 and E-cadherin, along with decreased intracellular calcium levels and increased epithelial barrier permeability. Furthermore, the inhibition of keratinization by NETs is ERK-KLF4-dependent. This study indicates that NETs impair the barrier function of HGKs and suppress keratinization through ERK/KLF4 axis. These findings provide potential targets for therapeutic approaches in periodontitis to address impaired gingival keratinization.

Nanoflower-like cerium-doped ZnO photocatalyst deposited by spray pyrolysis for the degradation of methylene blue dye

In this study, the photodegradation of methylene blue (MB) dye and photocatalytic activities of pure ZnO and ZnO:Ce (2%, 4%, 6%, %8) films deposited with USP, an economical technique, were examined. The effect of Ce-doping on the optical, structural, surface and photocatalytic properties of the films was investigated using XRD, UV–Visible spectrophotometry, spectroscopic ellipsometry (SE), photoluminescence spectrometry, X-Ray Photoelectron Spectroscopy (XPS), field emission scanning microscope (FESEM) and atomic force microscope (AFM). In the morphology analyzes of the films, a chrysanthemum-like nanoflower structure was observed as a result of Ce-doping. Photoluminescence spectra were taken in order to determine the trap levels formed in the structure of ZnO:Ce films to be used in photocatalytic applications. Consequently, the photocatalytic properties of ZnO:Ce films were found to vary significantly depending on the surface morphology of the photocatalyst and surface defects (zinc interstitial, oxygen vacancies).

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

This study reports the investigation of the effect of cerium (Ce) dopant concentration on defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient spectroscopy (DLTS). Undoped ZnO (uZnO) and Ce-doped ZnO (Ce:ZnO) were synthesized at different molar ratios using the sol–gel method, and n-Ce:ZnO/p-Si heterojunctions were fabricated on p-Si via spin coating. According to energy dispersive x-ray spectroscopy (EDS) data, no foreign atoms are present in the synthesized nanoparticles. A critical observation is that the oxygen content increases with Ce doping. Scanning electron microscopy (SEM) images revealed uniform spherical grains, with a decrease in grain size as Ce dopant concentration increased. X-ray diffraction (XRD) confirmed a hexagonal wurtzite crystal structure for all nanostructures. I–V measurements documented that the structures have a good rectifying behavior and that the structure exhibiting the best diode character is the Ce:ZnO/p-Si heterostructure containing 2 mol% Ce with an ideality factor of 3.36. DLTS revealed that Ce doping deepened defect levels below the conduction band edge (Ec), with trap level positions calculated as Ec − 0.079, Ec − 0.311, Ec − 0.290, and Ec − 0.386 eV for undoped, 1, 2, and 5 mol% Ce-doped ZnO/p-Si, respectively. The trap concentration decreases with the addition of Ce into the ZnO lattice. The study underlines the tunability of the electrical properties of ZnO/p-Si HJs through Ce doping and the optimizability of their efficiency.

Investigation of Thermo-Electrical Instabilities in a Semiconductor as 2D Dynamical Systems

A semiconducting sample placed in cryogenic media with applied electric field generates low frequency oscillations of electric current and sample temperature and known to be thermo-electrical instabilities. Although observation of current oscillations on oscilloscope is possible, change of sample temperature cannot be detected experimentally. Description of the phenomenon through mathematical equations helps to understand relationship of the two variables as well as their connection to deep trap behavior that are involved in supporting the instability. Mathematical model for thermo-electrical instabilities in an n type semiconductor based on the two deep trap level model with non-degenerate electron statistics has been introduced in order to investigate the unique relationship between the change in time of both electric current flowing through a semiconductor sample and the sample temperature. The 3D dynamical system of nonlinear inhomogeneous ordinary differential equations has been investigated as component 2D dynamical systems (n,T), (n,n<sub>t</sub>) and (n<sub>t</sub>,T) for local behavior at isolated equilibrium and at points on individual trajectories, where n, n<sub>t</sub> and T are free electron concentration at conduction band, electron concentration at deep traps and temperature of a semiconductor sample accordingly. Each of the planar systems is expressed in canonical form and investigated as a Cauchy problem with a set of appropriate initial values. This paper presents investigation results of phase trajectories of the planar systems depending on a single parameter – the temperature of cooling media T<sub>0</sub>. Based on obtained calculation results of time sequences of the three variables n, n<sub>t</sub> and T, phase differences among these variables have been determined for different values of T<sub>0</sub>. It has been established that the change in sample temperature lags behind change in current and this lag increases with T<sub>0</sub>. Clearly defined correlations among systems (n,T), (n,n<sub>t</sub>) and (n<sub>t</sub>,T) are seen, being the result of balance between field aided and thermal ionization mechanisms for charge carrier generation and recombination processes. Thermal and field assisted generation mechanisms compete with one another in achieving steady non equilibrium state in the system depending on temperature of cooling media T<sub>0</sub>.

IRSL properties of HfO2 obtained by the precipitation method and its correlation to ESR centres

Infrared-stimulated luminescence (IRSL) emission and its characterisation are reported for the first time for HfO2 synthesised by the precipitation method and its electron spin resonance (ESR) centres properties are shown in this study. IRSL spectrum has a broad emission band in the blue region, which is centred at about 2.49 eV. A similar emission was observed for the radiofluorescence (RF) with a band centred at 2.52 eV. RF signal intensity decreases with the readout temperature, which might indicate a thermal quenching process.IRSL signal is strongly affected by the readout temperature, as part of its emission is related to the presence of shallow traps (<100 °C). The IRSL shine-down curve is composed of two components with decay times of 15.7 and 800 s, and photoionisation cross-section values of about 1.20 × 10−19 and 2.35 × 10−21 cm2, respectively, based on IRSL carried out at 100 °C after 2 Gy of beta irradiation dose, using a general-order kinetic model. Dosimetric analyses indicated that there is a reproducible signal in IRSL, with a coefficient of variation lower than 9 % for repeatability and 3 % for reproducibility measurements. The dose-response curve has a linear trend in the dose range of 0.3–2.0 Gy. Regarding the photon energy study, it shows an overresponse for photo energy values below 200 keV. Fading of about 40 % after one day of storage was observed.Bleaching measurements indicated that the TL peaks located between 100 and 250 °C share the same trap levels as the IRSL ones. In addition, a possible charge transference is observed from the peak at 330 °C to lower temperature peaks. ESR analyses identified that oxygen vacancies of V+ type in a four-coordinated arrangement are induced by irradiation and are temperature-sensitive. Based on the bleaching and ESR measurements, it is reasonable to infer that V+ type vacancies are likely responsible for the IRSL, and its blue emission.

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

To determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S0), Au/PVC/p-Si (S1), and Au/PVC:Gt-GO/p-Si (S2) type SDs were grown onto the same n-Si wafer and their admittance measurements performed between 100 Hz and 1 MHz. The observed decrease in C and G/ω values as frequency increases shows that the charges at the interface-states (N ss) can easily follow ac-signal and supply an excess capacitance and conductance at lower frequencies. Using C and G/ω data at 1.5 V, the dielectric-constant (ϵ′), dielectric-loss (ϵ″), and loss-tangent (tan δ) were obtained as a function of frequency. To determine the relaxation processes in (PVC:Gt-GO) nanocomposite, complex-dielectric (M′ and M′′) formalism was also explored in the whole frequency range. The value of ac electrical conductivity (σ ac) remained independent of frequency until 0.1 MHz and then started to increase exponentially which corresponds to dc and ac conductivity. As compared to S1 and S2 with So SD, the conductivity and ϵ′ values increase due to the PVC and (PVC:Gt-GO) interlayer. The Ln(σ ac)-Ln(ω) plots were also drawn to analyze the conduction process and their slopes were found as 0.09, 0.39, and 0.58 for S0, S1, and S2 SD, respectively. These results show that the interaction and trap levels of the electron–hole pairs at lower frequencies, as well as from the well-localized relaxation mechanism at higher frequencies.

Zr dopant acting shallow donor and active site in CdS lattice for co-catalyst free photocatalytic H2 evolution

Hydrogen evolution by photocatalysis shows great potential in solar energy conversion process and thus has become an active field of research. Separation efficiency of photogenerated carriers, light absorption and surface reaction are the dominant aspects that affect the photocatalytic hydrogen evolution. Creating traps to prolong the lifetime of photogenerated charge carriers has been widely used but may be considered detrimental if they lead to recombination process of the photogenerated charge carriers. Herein, we design a kind of efficient atomic substitution strategy to create shallow donor for highly efficient hydrogen evolution reaction. The photocatalytic hydrogen evolution reaction rate reaches 3766.9 μmol h−1 g−1, which is about 2.98 times higher of pure CdS. The injected foreign atoms (Zr) not only reduce bandgap to extend light absorption but also generate shallow trap level to reduce recombination of photogenerated carriers. Moreover, the introduced atoms could downshift Fermi level to supply more carriers and act the role as active center to reduce Gibbs free energy, leading to the enhanced hydrogen generation rate and superior stability. This report offers new enlightenment into designing noble-metal free photocatalysts with extraordinary catalytic performance and excellent stability.

Exploring beta irradiation responses in Sr2+-Doped hydroxyapatite: A thermoluminescence study

This research investigates the structural and thermoluminescence (TL) properties of Sr2+-doped Ca5(PO4)3OH (HAp) phosphors. X-ray diffraction (XRD) analysis confirms that HAp has a hexagonal structure with a P63/m space group. The TL behaviour of HAp:Sr2+ phosphors is examined under beta irradiation in the temperature range of 25–500 °C. The study reveals three TL glow peaks at temperatures of 75, 212, and 296 °C. Investigation of TL responses across heating rates (HR) ranging from 0.1 to 5 °C/s shows that higher HRs result in increased maximum TL peak temperatures and reduced TL intensities. This trend suggests an augmented contribution from non-radiative transitions as the heating rate increases. Importantly, no evidence of thermal quenching is found in the HAp samples. Two different methods, Hoogenstraaten's and Booth-Bohun-Porfianovitch, yield consistent activation energy values of 0.50, 1.22, 1.67 eV, and 0.48, 1.19, 1.63 eV, respectively. Reusability assessments indicate a standard deviation of less than 5 %, confirming the reliability of the materials. Tm−Tstop analysis reveals a continuous distribution of trap levels. TL properties in HAp samples have been comprehensively characterized, contributing not only to enhancing our understanding of their behaviour, but also highlighting their potential applications in various areas. The findings of this study have provided valuable insight into the development of efficient catalysts that are suitable for a variety of applications.

Robust Self‐powered Optoelectronic Synapses Based on Epitaxial InSe/GaN Heterojunction with Interfacial Charge‐Trapping Layer

AbstractNeuromorphic devices that parallelize perception, preprocessing, and computation functions are expected to play a significant role in future non‐von Neumann architecture computers. Herein, a new retina‐inspired broadband self‐powered optoelectronic synaptic device based on 2D/3D heterojunction of epitaxial InSe on GaN(0001) is reported. Few‐layer n‐type InSe is grown on p‐type GaN by physical vapor deposition in an ultra‐high vacuum (UHV) environment. The devices are fabricated using a shadow mask assisted UHV electrode deposition technique. High‐resolution transmission electron microscopy images reveal that an atomically thin amorphous layer, which induces highly efficient charge trapping, is formed at the InSe/GaN interface. The photoresponse spans from visible to near‐infrared, and the response time is prolonged to 103 ms owing to the deep trapping levels. Thus, synaptic functions, including excitatory postsynaptic current, paired‐pulse facilitation with a high index of up to 170%, short‐term plasticity, and high‐pass filtering characteristics, are realized. Additionally, the synapses demonstrated the merit of realizing image sharpening and arithmetic operations on the same device under infrared and visible light illumination. This study provides a new platform of 2D/3D heterostructures for robust optoelectronic synapses that may find applications in post‐Moore era neuromorphic vision systems.

Defects in Halide Perovskites: Does It Help to Switch from 3D to 2D?

Two-dimensional (2D) organic-inorganic hybrid iodide perovskites have been put forward in recent years as stable alternatives to their three-dimensional (3D) counterparts. Using first-principles calculations, we demonstrate that equilibrium concentrations of point defects in the 2D perovskites PEA2PbI4, BA2PbI4, and PEA2SnI4 (PEA, phenethylammonium; BA, butylammonium) are much lower than in comparable 3D perovskites. Bonding disruptions by defects are more destructive in 2D than in 3D networks, making defect formation energetically more costly. The stability of 2D Sn iodide perovskites can be further enhanced by alloying with Pb. Should, however, point defects emerge in sizable concentrations as a result of nonequilibrium growth conditions, for instance, then those defects likely hamper the optoelectronic performance of the 2D perovskites, as they introduce deep traps. We suggest that trap levels are responsible for the broad sub-bandgap emission in 2D perovskites observed in experiments.