The present research used end-capped molecular engineering to fabricate novel hole transport materials based on the benzodithiazole (BBT) core, designated as BBT-M1 to BBT-M5 HTMs. The computational techniques such as DFT and TD-DFT were employed to characterize the effect of terminal acceptors in designed molecules. Their results were compared with parent (BBT-R) and Spiro (MeOTAD) HTMs. Under TD-DFT investigation, absorption peaks of designed molecules were identified within the range of 380–559 nm, indicating their operation near UV and near/mid visible region. It was observed that designed materials have more compatible and deeper HOMO levels ranging from −5.242 to −5.161 eV, which leads to high open circuit voltage. They also exhibit better planarity, increased solubility and reactivity, moderate stability, and a narrow band gap ranging from 1.93 to 2.36 eV. Furthermore, the reorganization energy of holes (0.145–0.205 eV) is significantly lower than that of electrons (0.221–0.376 eV), indicating an overall tendency towards hole transport material. In BBT-M1 to BBT-M5 HTMs, the charge transfer integral of hole (0.229–0.353 eV), hole hopping rate (5.218×1014–6.969×1014 s–1), open circuit voltage (1.311–1.392 V) and fill factor (90.50–90.93 %) are remarkably better than BBT-R and Spiro (MeOTAD). Based on these outstanding attributes, it is proposed that BBT-M1 to BBT-M5 molecules are potential HTM candidates to replace conventional HTMs such as spiro (MeOTAD).