Transport In Heterostructures Research Articles

Unraveling interfacial thermal transport in β-Ga2O3/h-BN van der Waals heterostructures

As global power consumption rapidly increases with generation of significant amount of heat, efficient thermal management in electronic equipments becomes an urgent task, which requires a comprehensive understanding on thermal transport in heterostructures within devices. Here, we present detailed examination on the interfacial thermal transport of van der Waals (vdW) heterostructures, composed of β-Ga2O3 and hexagonal boron nitride (h-BN) multilayers. Through extensive molecular dynamics simulations, we show that the interfacial thermal conductance (ITC) of β-Ga2O3/h-BN system becomes as high as 136.8MWm−2K−1, and the high ITC value results from substantial phonon interaction across the interface. In addition to the pristine interface, the effect of structural modulation including strain, vacancies and substitutional defects in h-BN multilayers on the ITC is also analyzed, and it is demonstrated that there exists ranges of strain values and defect concentrations which increase the ITC, and that the enhanced ITC is the result of the interplay among the interfacial distance, the overlap in the phonon density of states and elastic mismatch between β-Ga2O3 and h-BN multilayers. These results not only provide insights into understanding interfacial phonon transport in vdW systems but also offer guiding principles for designing efficient heat dissipators in device applications.

Impact of Stress and Material Porosity on Double Boost DC-DC Converter Technology to Enhance Field-Effect Heterotransistors and Heterodiodes Density

Currently, several critical issues in solid-state electronics, such as improving the performance, reliability and density of integrated circuits elements like diodes, field-effect transistors, and bipolar transistors are being intensively addressed. One effective approach to reduce the dimensions of integrated circuits elements is to manufacture them in thin film heterostructures with an optimal manufacturing regime. In this paper, we explore methods to increase the density of field-effect heterotransistors and heterodiodes in the framework of a double boost DC-DC converter. We consider manufacturing this converter in a heterostructure with a specific configuration, where several required areas of the heterostructure should be doped by diffusion or ion implantation. Subsequently, the dopant and radiation defects should be annealed using an optimized scheme. Based on this approach, we provide recommendations for determining the optimal annealing time to achieve the best compromise between increasing density of integrated circuits elements and minimizing local overheating during their operation. We also propose a method to reduce the mismatch-induced stress in the heterostructure. We present an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits, accounting for mismatch-induced stress. This approach allows for the consideration of spatial and temporal variations in the parameters of technological processes, as well as their nonlinearity.

On Approach to Increase Density of Fieldeffect Heterotransistors in the Framework of a Current Follower Transconductance Amplifier. Influence of Mismatchinduced Stress and Porosity of Materials on Technological Process

In this paper we introduce an approach to increase density of field-effect heterotransistors in the framework of a current follower transconductance amplifier. In the framework of the approach we consider manufacturing the amplifier in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On Model of Manufacturing of a Band-Pass Filter to Increase Integration Rate of Field-Effect Heterotransistors

In the present time several actual problems of the solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar transistors) are intensively solving. To increase the performance of these devices it is attracted an interest determination of materials with higher values of charge carriers mobility. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures. In this paper we introduce an approach to increase density of field-effect transistors in the framework of a metal-oxidesemiconductor field-effect transistor filter. In the framework of the approach we consider manufacturing of the above filter in a heterostructure with specific configuration. Several appropriate areas of the considered heterostructure should be doped by diffusion or by ion implantation. After the doping the considered dopant and radiation defects should be annealed in the framework oh the recently considered optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. The decreasing of the mismatch-induced stress could be decreased by radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures

Abstract In this paper we develop a stochastic simulation algorithm for electron transport in a DA-pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in the heterostructure in the form of a coupled system of Poisson, Schrödinger and kinetic Boltzmann equations is given. A Monte Carlo model of electron transport in DA-pHEMT heterostructures which accounts for multivalley parabolic band structure, as well as relevant formulas for calculating electron scattering rates and scattering phase functions on polar optical, intervalley phonons and on impurities are developed. The results of a computational experiment involving the solution of the system of Poisson–Schrödinger–Boltzmann equations for the AlGaAs/GaAs/InGaAs/GaAs/AlGaAs heterostructure are presented. The distribution of electrons by energy subband in the main and satellite valleys and the field dependences of the electron drift velocity in each valley are calculated. It was discovered that there is no spatial transfer of electrons into wide-gap AlGaAs layers due to high barriers created by modulated-doped impurities. A comparative analysis of the electron drift velocities in the studied DA-pHEMT heterostructures and in the unstrained layer of the InGaAs is given.

On approach to optimize manufacturing of field-effect transistors framework a conventional full-bridge converter to increase their integration rate: On influence mismatch-induced stress

In this paper we introduce an approach to increase density of field-effect transistors framework a conventional full-bridge converter. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

English

In this paper we introduce an approach to increase density of field-effect transistors framework nulling-resistor output amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On approach to increase density of field-effect heterotransistors in the framework of conventional monotonic switches Influence of mismatch-induced stress and porosity of materials on technological process

In this paper we introduce an approach to increase density of field-effect heterotransistors in the framework of conventional monotonic switches. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

A nulling-resistor output amplifier in the framework of heterostructures based on nonlinear partial differential equations

<span>In this paper, we introduce an approach to increase the density of field-effect transistors framework nulling-resistor output amplifier. In the framework of the approach, we consider manufacturing the amplifier in a heterostructure with a specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits with account for mismatch-induced stress. </span>

An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements. Influence of mismatch induced stress and porosity of materials on technological process

In this paper we introduce an approach to increase density of field-effect transistors framework a compact transimpedance amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Field-like spin\u2013orbit torque induced by bulk Rashba channels in GeTe/NiFe bilayers

Most studies of the Rashba effect have focused on interfacial Rashba spin–orbit coupling. Recently, bulk Rashba materials have attracted considerable interest owing to their potential to enhance the Rashba spin–orbit torque. By employing a bulk Rashba material, GeTe, as a spin–orbit channel in GeTe/NiFe bilayers, a large field-like spin–orbit torque up to 15.8 mT/(107 A cm−2) is measured. This value is one of the largest reported field-like torques and is attributed to the interfacial spin–orbit coupling being enhanced by the bulk Rashba effect in the GeTe channel. Furthermore, the large field-like torque is maintained even for a 20-nm-thick NiFe layer. This unconventional dependence on the thickness of both the GeTe and NiFe layers cannot be described by conventional theory, but it is believed to stem from the additional bulk Rashba effect-induced term. The large field-like torque over a wide range of ferromagnet thicknesses results in scalable in-plane spin–orbit torque devices. This result calls for a further theoretical study on spin transport in heterostructures, including bulk Rashba materials.

Increasing the Density of Field-Effect Heterotransistors in an Amplifier Flipped Voltage Follower Mirrors with Account of Miss-Match Induced Stress

In this paper, we introduce an approach to increase density of field-effect transistors framework current mode instrumentation amplifier flipped voltage follower mirrors. The approach we consider for manufacturing of the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We also introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

English

In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On Optimization of Manufacturing of Instrumentation Amplifier Input Bias Circuitry to Increase Density of Elements

In this paper, we introduce an approach to increase density of field-effect transistors framework instrumentation amplifier input bias circuitry. Framework the approach, we consider the manufacturing of inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. Moreover, do pant and radiation defects should by annealed framework by optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

English

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

First-principles analysis of phonon thermal transport properties of two-dimensional WS2/WSe2 heterostructures* *Project supported by the National Natural Science Foundation of China (Grant Nos. 51720105007, 51806031, 11602149, and GZ1257) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. DUT16RC(3)116 and DUT19RC(3)006). The computing resources from Supercomputer Center of Dalian University of Technology and ScGrid are greatly acknowledged.

The van der Waals (vdW) heterostructures of bilayer transition metal dichalcogenide obtained by vertically stacking have drawn increasing attention for their enormous potential applications in semiconductors and insulators. Here, by using the first-principles calculations and the phonon Boltzmann transport equation (BTE), we studied the phonon transport properties of WS2/WSe2 bilayer heterostructures (WS2/WSe2-BHs). The lattice thermal conductivity of the ideal WS2/WSe2-BHs crystals at room temperature (RT) was 62.98 W/mK, which was clearly lower than the average lattice thermal conductivity of WS2 and WSe2 single layers. Another interesting finding is that the optical branches below 4.73 THz and acoustic branches have powerful coupling, mainly dominating the lattice thermal conductivity. Further, we also noticed that the phonon mean free path (MFP) of the WS2/WSe2-BHs (233 nm) was remarkably attenuated by the free-standing monolayer WS2 (526 nm) and WSe2 (1720 nm), leading to a small significant size effect of the WS2/WSe2-BHs. Our results systematically demonstrate the low optical and acoustic phonon modes-dominated phonon thermal transport in heterostructures and give a few important guidelines for the synthesis of van der Waals heterostructures with excellent phonon transport properties.

An approach to model manufacturing of an enhanced swing differen-tial Colpitts oscillator based on heterostructures to increase density of their elements with account miss-match induced stress. On optimization of annealing

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

English

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 µm at low temperatures and electron-phonon scattering limited transport at room temperature.