On Model of Manufacturing of a Band-Pass Filter to Increase Integration Rate of Field-Effect Heterotransistors

Abstract

In the present time several actual problems of the solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar transistors) are intensively solving. To increase the performance of these devices it is attracted an interest determination of materials with higher values of charge carriers mobility. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures. In this paper we introduce an approach to increase density of field-effect transistors in the framework of a metal-oxidesemiconductor field-effect transistor filter. In the framework of the approach we consider manufacturing of the above filter in a heterostructure with specific configuration. Several appropriate areas of the considered heterostructure should be doped by diffusion or by ion implantation. After the doping the considered dopant and radiation defects should be annealed in the framework oh the recently considered optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. The decreasing of the mismatch-induced stress could be decreased by radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.