Borophene, a monometallic two-dimensional layered material has gained significant attention due to its exceptional electrical and optical properties. Despite this, borophene layers tend to restack; retards ionic conductivity, imperative for practical applications. Thus, by introducing large-sized dopants into borophene nanosheets using an ion implantation technique has been acknowledged. Accordingly, herein, structural and electronic engineering of borophene has been done with implantation of copper (Cu) ions at various fluence rates (5 × 1012, 5 × 1013, 5 × 1014 and 5 × 1015 ions-cm−2 respectively) using 1μA current at a low energy of 80 keV. The Cu insertion between borophene interlayers prevents self-restacking; providing surfacial active sites with tunable work function and decreased band gap of pristine borophene, thereby increasing charge transport ability. Further, the structural properties of implanted borophene were characterized through Raman spectroscopy, FT-IR spectroscopy and optical properties using UV–Vis and photoluminescence studies. Also, I-V measurements were conducted to study the electrical properties. Hence, ion implantation helps in significantly enhance the electrical conductivity and transportation properties of borophene.