Transparent Electrodes Research Articles

Carbon-doped ZnO thin films: A transparent conductive oxide for application in solar-blind photodetectors

Transparent conductive oxide (TCO) films are crucial in optoelectronic devices, such as photodetectors, due to their unique blend of transparency and electrical conductivity. ZnO is a top choice for TCOs owing to its excellent properties, non-toxicity, and cost-effectiveness. In this work, we explore the potential of carbon doping to enhance the electrical properties of ZnO films for transparent conductive applications. Our findings reveal that C-doped ZnO (ZnO:C) films retain the pristine high quality and surface morphology despite an increase in defects with higher C doping. Notably, C doping does not compromise the visible light transmittance of ZnO films, while inducing a gradual increase in optical bandgap, indicative of the typical Burstein–Moss effect. As carbon doping increases, the ZnO:C films exhibit improved carrier concentration, lower resistivity, and sustained high mobility, achieving optimal performance with an electron concentration of 3.73 × 1019 cm−3, resistivity of 3.69 × 10−3 Ω cm, and mobility of 46.08 cm2 V−1 s−1. Finally, we utilized ZnO:C films as a transparent electrode material in ε-Ga2O3-based photodetector, achieving the development of transparent device and attaining high-performance solar-blind detection capabilities. This work provides a strategy for developing a transparent conductive oxide, with ZnO:C emerging as a promising rival to IIIA-doped ZnO for optoelectronic applications.

ZnO nanoarrays/Cu nanowires composite films with high haze value

In this work, we worked on compositing Cu nanowires (NWs) with ZnO nanoarrays (NAs) to enhance the light trapping abilities of transparent conductive films. A well-dispersed, crosslinked network of Cu NWs with appropriate light trapping ability was formed on the surface of the ZnO NAs, and the ZnO NAs/Cu NWs composite structures were obtained ultimately. The Cu NWs on the surface of the composite structures maintained excellent transparency and conductivity while preventing agglomeration phenomena. The ZnO NAs/Cu NWs composite films exhibited low average sheet resistance (59 Ω/sq) and high haze value (0.53) at 550 nm with uniform conductivity and exceptional light trapping performance. The composite films not only demonstrate enhanced light trapping abilities, but also exhibit improved electrical properties, making it an outstanding candidate for transparent front electrode materials in solar cell applications.

Mitigating Delamination in Perovskite/Silicon Tandem Solar Modules

As perovskite/silicon tandem solar cells head toward industrialization, one emerging challenge relates to the mechanical reliability of these organic–inorganic multilayer devices. Herein, the fracture toughness and interfacial strength of monolithic p–i–n perovskite/silicon tandems are assessed in the context of module integration. While the weakest layer in the tandem stack investigated is found to be C60, used here as electron‐transport layer (interfacial tensile strength of 0.64 MPa), more concerningly, the fracture energy of the C60/tin‐oxide interface is found to be only 1.2 J m−2. The low fracture toughness of perovskite/silicon tandems can encourage crack propagation and large‐scale delamination during processes used for their integration into modules such as cell cutting, interconnection, and vacuum lamination. By improving the tin oxide buffer layer properties and reducing sputtering‐induced internal stress (associated with the transparent top electrode deposition onto the tin the oxide buffer layer), the fracture energy is improved to over 160 J m−2. A second strategy to mitigate delamination due to the low fracture toughness of the cells is tailoring encapsulation and cell processing techniques specifically toward the perovskite/silicon tandem technology. In this work, a critical reliability issue, relevant for any perovskite‐based optoelectronic technology requiring device packaging, is addressed.

MXene Inks for High‐Throughput Printing of Electronics

AbstractMXene inks are promising alternatives for conventional conductive inks in printing electronics. However, the formulation of MXene inks is challenging due to the physicochemical properties of the few solvents in which MXenes can be dispersed. Furthermore, conventional MXene dispersions form high‐viscosity gels at low concentrations, making their ink formulation even more difficult. Here, a novel co‐solvent‐based approach is reported for dispersing MXenes in polar organic solvents that have excellent physicochemical properties as a carrier solvent for ink formulation but are not suitable for dispersing MXenes. Water is used as a dispersing agent and the second component of the co‐solvent system. The surfactant‐like role of water in dispersing MXenes in such solvents is also confirmed using molecular dynamics simulations. Using this strategy, the sol‐gel transition is significantly upshifted, enabling the formulation of highly concentrated inks with single‐ or few‐layered large‐flake MXenes. Numerous types of electronic components such as interconnects, resistors, transparent flexible conductive electrodes, and micro‐supercapacitors are fabricated using high‐throughput coating and printing techniques such as gravure printing, showcasing the immense potential of MXene inks for room‐temperature printing of electronics.

Carbon nanotube-grid infrared transparent electrodes for flexible electrochromic devices with visible to mid-infrared dual-band modulation

Flexible mid-infrared electrochromic devices (MIR-ECDs) have attracted wide attention due to the growing demands for thermal camouflage and body comfort. However, the normal conductive films (e.g., indium tin oxide/polyethylene terephthalate (ITO/PET) films) are unsuitable for MIR-ECDs due to low infrared transmittance. Herein, the infrared transparent carbon nanotube (CNT) grid films were prepared by designing the grid structure. The infrared transmittance of CNT grid film could reach 72 %; meanwhile, the visible transmittance could reach 75 %. The CNTs exhibited infrared modulation under different voltages due to the doping/de-doping of ions in electrolytes into the CNT network. The flexible electrochromic devices with visible to mid-infrared dual-band modulation were prepared by using CNT grid film as the electrode and poly (3,4 ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as the electrochromic layer, which could realize the infrared synergistic modulation of PEDOT:PSS and CNT grid in the mid-infrared range and reversible color changes between light blue and dark blue in the visible range, showing promising applications in adaptive camouflage and thermal management.

ZnO/Ag/ZnO multilayers as an n-type transparent conducting electrode for transparent organic light-emitting diodes

Alternative transparent conducting electrodes (TCEs) have gained significant attention in recent decades in an effort to replace costly indium-tin oxide (ITO) in organic optoelectronic devices. For example, state-of-the-art top-emitting and transparent organic light-emitting diodes (OLEDs) in the display industry require a transparent or semitransparent cathode for electron injection. Current OLED display technology employs ultrathin metallic (typically Mg:Ag) layers as semitransparent cathodes. However, recent studies have shown that metal oxide/metal/metal oxide multilayers can perform better optically and offer improved stability compared to semitransparent metal cathodes. Deposition of these multilayers with minimal damage to the underlying organic emissive layer is imperative. Here, we investigate a ZnO/Ag/ZnO TCE multilayer TCE deposited under mild sputtering conditions that are safe for the emissive layer. We demonstrate ∼ 85 % transparent electrodes with a sheet resistance of 1.47 Ω/sq, which is more conductive than the industry standard, ITO. We also integrate the multilayer TCE as the cathode in a transparent OLED device built on ITO, demonstrating the compatibility of this TCE with the existing OLED technology.

Maintaining Electrochemical Performance of Flexible ITO-PET Electrodes under High Strain.

Flexible electrode materials, particularly indium tin oxide (ITO)-coated polyethylene terephthalate (PET), have attracted the attention of researchers for a wide variety of applications. However, there has been limited attention to the effects of electrode flexibility during electrochemical processes. In this research article, we studied how bending commercially available ITO-PET electrodes impacts the electrodeposition process of polyaniline (PANI). Thicker ITO layers start cracking at a normalized strain of 0.10 (bending radius of 10 mm), and cracking becomes detrimental to full deposition at a normalized strain of 0.16 or higher (bending radius of 6 mm or lower). Thinner ITO layers were evaluated as electrodes in electrochemical applications; however, the higher resistance of these electrodes prevented uniform electrodeposition of PANI. In order to overcome the issues of cracking, conductive thin films and copper tape were explored as low-cost methods for electrically bridging cracks in the electrode. While conductive thin films reduced the resistance effect, copper tape was found to fully restore the original electrochemical activity as measured by chronoamperometry and enable uniform electrodeposition at a bending radius as low as 3 mm. This strategy was then demonstrated by performing electrochromic bleaching of PANI under high-strain conditions. These studies illustrate some of the limitations of ITO-PET electrodes and strategies for overcoming these limitations for future applications that require a high degree of flexibility in a transparent electrode substrate.

Enhanced Microstructural Uniformity in Sulfuric-Acid-Treated Poly(3,4-Ethylenedioxythiophene):Poly(Styrene Sulfonate) Films Using Raman Map Analysis.

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films have emerged as potential alternatives to indium-tin oxide as transparent electrodes in optoelectronic devices because of their superior transparency, flexibility, and chemical doping stability. However, pristine PEDOT:PSS films show low conductivities because the insulating PSS-rich domains isolate the conductive PEDOT-rich domains. In this study, the conductivities and corresponding spatially resolved Raman properties of PEDOT:PSS thin films treated with various concentrations of H2SO4 are presented. After the PEDOT:PSS films are treated with the H2SO4 solutions, their electrical conductivities are significantly improved from 0.5 (nontreated) to 4358 S cm-1 (100% v/v). Raman heat maps of the peak shifts and widths of the Cα═Cβ stretching mode are constructed. A blueshift and width decrease of the Cα═Cβ Raman mode in PEDOT are uniformly observed in the entire measurement area (20 × 20 µm2), indicating that microstructural transitions are successfully accomplished across the area from the coiled to linear conformation and high crystallinity upon H2SO4 treatment. Thus, it is proved that comprehensive Raman map analysis can be easily utilized to clarify microstructural properties distributed in large areas induced by various dopants. These results also offer valuable insights for evaluating and optimizing the performance of other conductive thin films.

Plasmonically-boosted high-performance UV self-biased photodetector based on SiC-based low-dimensional heterojunction via Pt nanostructures deposition

While possessing fully superior electrical, optical and mechanical capabilities, the third-generation semiconductor SiC is extensively recognized as one of the most important candidates to developing high-temperature CMOS, intense-radiation hard detectors, high-power electron devices, and other fields. However, the fabrication of low-dimensional SiC structures presents a challenge, limiting its forward-looking applications, particularly for the miniaturized and integrated self-powered ultraviolet (UV) photodetectors. Herein, a high-performance UV photodetector, which involving a p-SiC film, a Ga-doped ZnO microwire coated by Pt nanoparticles (PtNPs@ZnO:Ga MW), a single-layer graphene (Gr) as transparent electrode, was constructed. The device exhibits pronounced UV photodetection capabilities, containing a high On/Off ratio (>105), a peak responsivity approaching 0.266 A/W, a specific detectivity exceeding 1.50 × 1013 Jones, and an exceptional external quantum efficiency closing to 98.7% upon 335 nm illumination at 0 V bias. The detector shows an admirable performance and quite competitive within their class. In the device, the surface-coated PtNPs enable to optimize ZnO:Ga/SiC interfacial performances containing significant enhancement of photoelectric conversion efficiency, efficient suppression of surface/interface defects and trapping centers, and other parameters, thus giving rise to qualitative enhancement of the overall detector properties. Simultaneously, the use of Gr electrode as transparent window allows for maximum UV light absorption and boosts transport properties for the photocarriers. This work presents a valuable reference for the development of high-performance low-dimensional SiC-based photodetecting devices, exploring an important step toward potential optoelectronic applications.

Ultrasonic Punching with Inkjet‐Printed Dot Array for Fabrication of Perforated Metal Pattern as Transparent Heater

This study introduces an aluminum transparent heater manufactured with a perforated pattern by using inkjet printing process. The polymeric sacrificial layer was deposited in a periodic dot arrangement by inkjet printing and a aluminum thin film was deposited using a vacuum deposition process. By the ultrasonic punching to remove inkjet‐printed sacrificial layer, the transparent electrode with perforated metal pattern was formed. From the multiphysics simulation, it is investigated that the narrow region of the perforated pattern is efficient to generate Joule heating. The relationship between electrical and thermal properties is investigated by adjusting the spacing of holes in the aluminum grid. Finally, the performance of the fabricated transparent heater is demonstrated that ice cube placed on top of the manufactured transparent heater is removed within 120 s. This ultrasonic punching with inkjet‐printed sacrificial layer is expected to be applicable to various applications.

Investigation of structural, morphological and optoelectronic properties of (Ni, Co)-doped and (Ni/Co) co-doped SnO2 (110) sprayed thin films

The manuscript details the application of spray pyrolysis for the deposition of an economically viable transparent conductive oxide film comprised of (Ni/Co) co-doped SnO2 on a glass substrate. The primary objective of this research was to systematically examine the impact of Ni/Co co-doping on diverse properties of the SnO2 thin film. These properties encompassed the film's structural composition, surface morphology, optical response, and electrical behaviors. A comparison was made with pure SnO2 film, as well as SnO2 films doped with 3 %Ni and 1 %Co. The results indicate that all the samples exhibited a tetragonal structureThe introduction of Co and Ni atoms had no impact on the favored alignment of the (110) plane or the crystal structure of the SnO2 film. The crystallite size of the pure SnO2 film, as well as the (Co, Ni)-doped and (Ni/Co) co-doped SnO2 films, varied within the range of 11 to 20 nm. Scanning electron microscopy (SEM) images were employed to assess how doping and co-doping influenced the surface characteristics of the films. The presence of pores and/or roughness on the surface resulted in a hydrophilic character and a decrease in the contact angle for the doped films (Ni, Co). However, the co-doped film exhibited a hydrophobic characteristic due to the surface enhancement provided by SnO2:3 %Ni:1 %Co. The research also focused on the optical characteristics of the films, showing a positive impact with the proper incorporation of Ni and Co atoms into the SnO2 lattice. It was notably observed that the addition of Ni and Co atoms improves the optical properties of the undoped transparent SnO2 film in the visible spectrum, with a high transmittance of 87 % achieved for the Ni-doped film. Furthermore, the hydrophobic nature achieved by adding a concentration of 3 %Ni to the SnO2:1 %Co film enhances its optical transmission in the range of 300 nm to 750 nm. The SnO2 film shows an improvement in the electrical resistivity upon doping and co-doping with low resistivity value of 2.22 × 10−2 Ω.cm for the film (3 %Ni/1 %Co)-SnO2. Drawing from these insightful results, the study proposes the potential utilization of (Ni/Co) co-doped SnO2 films as transparent electrodes in optoelectronic applications, especially in the manufacturing of thin film solar cells.

Advances in Stretchable Organic Photovoltaics: Flexible Transparent Electrodes and Deformable Active Layer Design.

Stretchable organic photovoltaics (OPVs) have attracted significant attention as promising power sources for wearable electronic systems owing to their superior robustness under repetitive tensile strains and their good compatibility. However, reconciling a high power-conversion efficiency and a reasonable flexibility is a tremendous challenge. In addition, the development of stretchable OPVs must be accelerated to satisfy the increasing requirements of niche markets for mechanical robustness. Stretchable OPV devices can be classified as either structurally or intrinsically stretchable. This work reviews recent advances in stretchable OPVs, including the design of mechanically robust transparent electrodes, photovoltaic materials, and devices. Initially, an overview of the characteristics and recent research progress in the areas of structurally and intrinsically stretchable OPVs is provided. Subsequently, research into flexible and stretchable transparent electrodes that directly affect the performances of stretchable OPVs is summarized and analyzed. Overall, this review aims to provide an in-depth understanding of the intrinsic properties of highly efficient and deformable active materials, while also emphasizing advanced strategies for simultaneously improving the photovoltaic performance and mechanical flexibility of the active layer, including material design, multi-component settings, and structural optimization.

Transparent ultraviolet photosensor based on vertically aligned ZnO nanorods: The role of the electrode geometry

Ultra-violet (UV) photosensors are commonly used for environmental monitoring and space applications to measure UV radiation in order to mitigate its negative effects. This work investigates the effect of the spacing between the electrodes on the performance and response of UV photosensors. First, ZnO nanorods are thermally grown on a glass substrate with transparent interdigitated electrodes. The surface topography and morphology are characterized using advanced microscopy techniques. The optical properties are explored using UV-Vis and photoluminescence analyses. I-t and I-V measurements in the dark and under UV radiation are carried out to reveal the photosensor characteristics at electrode spacings of 50, 75, 100, 125, and 150 µm. The best photosensor performance is observed at a spacing of 75 µm under a bias voltage of +7 V. The photosensor has a responsivity of 5.06478 mAW−1, photosensitivity of 0.58002 %, gain of 1.0058, rise time of 0.533 s, and decay time of 0.474 s. Regardless of the performance of the photosensors, this study gives an insight into the role of the electrode geometry, including the electrode gap and measurement path, which could be helpful in designing UV photosensors and optimizing their performance.

Tailoring Mechanical Reliability in Transparent ZnO-Zincone Thin-Film Electrodes with Organic Interlayer Interfaces and Thickness.

To address the inherent brittleness of conventional transparent conductive oxides, researchers have focused on enhancing their flexibility. This is achieved by incorporating organic films to construct organic-inorganic hybrid layer-by-layer nanostructures, where the interlayer thickness and interface play pivotal roles in determining the properties. These factors are contingent on the type of material, processing conditions, and specific application requirements, making it essential to select the appropriate conditions. In this study, ZnO-zincone nanolaminate thin films were fabricated using atomic layer deposition and molecular layer deposition in various structural configurations. Transmission electron microscopy, X-ray diffraction, and scanning electron microscopy were used to conduct a thorough analysis of the thin-film growth and structural transformations resulting from the deposition conditions. Furthermore, the influence of structural differences at the interfaces on the mechanical properties of the films was investigated by employing both tensile and compression-bending fatigue tests. This comprehensive examination reveals noteworthy variations in the mechanical responses of the films. Thin films characterized by internal porosity and an intermixed amorphous structure demonstrated enhanced compressive toughness, whereas rigid organic layers improved flexibility. These findings offer valuable insights into the development of flexible, transparent multilayer films.

Characterization of Transparent Electrodes with Ag Metal-mesh using MATLAB

It is well-known that optical transparence and electric resistance have a trade-off relationship in transparent electrodes. For this reason, developing methods to predict this relation have been important in various fields of academic research as well as for industrial applications. Herein, we suggest a simple method which reveals the relationship between optical transparence and electric resistance using MATLAB, based on the geometric characteristics of a random metal network. Ag metal-mesh transparent electrodes were fabricated with various conditions using colloidal silica cracked-templates and a Radio Frequency (RF) sputtering system. MATLAB software was used to analyze structural images of the Ag mesh network, automatically quantifying the density and width of the Ag meshes. From these data, the transparency and sheet resistance values of the Ag mesh electrodes were predicted and compared with measured values. Regarding transparency, the introduction of fitting parameters revealed minimal differences between the experimental and predicted values obtained from the structure images. Although the predicted sheet resistance was slightly different than the real measured values due to atomic defects or imperfections in the crystals of the Ag-mesh network, it was possible to observe a similar trend between the measured and predicted sheet resistances with changes in the fractional coverage area of the Ag-mesh network.

Fullerene-Based Heterojunctions for Non-Selective Absorption Transparent Solar Cells.

Transparent photovoltaic (TPV) devices have great potential to be applied as smart windows in construction and agriculture fields. TPVs with an average visible transmission (AVT) exceeding 50% are among the strong candidates to build lighting windows since the champion efficiency has already exceeded 10%. However, it is still a challenge in TPVs that semiconductors are generally expensive and transparency is difficult to further enhance, particularly for device AVT exceeding 70%. In this work, we develop a set of fullerene-based heterojunctions to harvest the light. By utilizing the low-cost fullerene as the light-absorbing material and combining it with the transparent electrode, the fabricated TPV device can achieve an AVT of 72.1% with a PCE exceeding 1%. Notably, the device with an AVT of 82% is also successfully demonstrated. This study provides an effective approach for building low-cost and efficient TPV devices.

Highly Stable Silver Nanowire Plasmonic Electrodes for Flexible Polymer Light-Emitting Devices.

Silver nanowire (AgNW) transparent electrodes are considered as a promising candidate for applications in flexible optoelectronic devices. However, it remains a great challenge to obtain flexible AgNW electrodes with excellent optoelectrical properties and mechanical flexibility. Here, highly stable Ag nanoparticle (AgNP)-enhanced plasmonic AgNW electrodes are demonstrated via the controllable in situ growth of AgNPs at the AgNW junctions and introduction of an l-histidine (l-His) wrapping layer. The flexible transparent electrodes of AgNW-AgNP/l-His possess a low sheet resistance (Rsh) of ∼17.5 Ω sq-1, a high transmittance of ∼92.5% (550 nm), and a robust mechanical stability (100,000 bending cycles). Benefiting from plasmon-coupling effects, flexible polymer light-emitting devices (FPLEDs) with AgNW-AgNP/l-His electrodes present a current efficiency (CE) of ∼14.8 cd A-1 and an external quantum efficiency (EQE) of ∼5.6%, constituting ∼80% and ∼75% increases compared to those of the reference devices with AgNW electrodes, respectively. Additionally, the laminated flexible transparent PLEDs (FT-PLEDs) are demonstrated by integrating polydimethylsiloxane/AgNW-AgNP anodes by a soft lamination process. The FT-PLEDs present a CE of ∼7.1 cd A-1 (cathode side: ∼3.9 cd A-1; anode side: ∼3.2 cd A-1) and an EQE of ∼2.7% (cathode side: ∼1.5%; anode side: ∼1.2%). Furthermore, the FPLEDs and FT-PLEDs exhibit robust mechanical durability, maintaining ∼89% and ∼86% of their initial luminance after 1000 bending cycles at a bending radius of 2 mm, respectively. This work opens up a new avenue for the development of high performance and stable flexible optoelectronic devices.

Low Driving Voltage Electroluminescence Device for Integrated Visual Strain Sensing.

As a pivotal component in human-machine interactions, display devices have undergone rapid development in modern life. Displays such as alternative current electroluminescence|alternative current electroluminescent (ACEL) devices with high flexibility and long operational lifetimes are essential for wearable electronics. However, ACEL devices are constrained by their inherent high driving voltage and complex fabrication processes. Our work presents an easy blade-coating method for fabricating flexible ACEL display devices based on an all-solution process. By dispersing BaTiO3 and ZnS/Cu powder into waterborne polyurethane, we successfully combined dielectric and fluorescence functionalities within a single layer, significantly reducing the device's driving voltage. Additionally, the ionic conducting hydrogel was chosen as a transparent electrode to achieve good electrical contact and strong interfacial adhesion through in situ polymerization. Owing to the unique method, our ACEL device exhibits high flexibility, low driving voltage (20-100 V), high brightness (300+ cd/m2 at 60 V), and environmental friendliness. Furthermore, by repurposing the hydrogel electrode, we integrated strain visualization capabilities within a single device, highlighting its potential for applications such as wearable healthcare monitoring.

A Flexible Long-Wave Infrared Radiation Modulator Integrated with Electrochromic Behavior for Dual-Band Camouflage.

Electrochromic devices (ECDs), which are capable of modulating optical properties in the visible and long-wave infrared (LWIR) spectra under applied voltage, are of great significance for military camouflage. However, there are a few materials that can modulate dual frequency bands. In addition, the complex and specialized structural design of dual-band ECDs poses significant challenges. Here, we propose a novel approach for a bendable ECD capable of modulating LWIR radiation and displaying multiple colors. Notably, it eliminates the need for a porous electrode or a grid electrode, thereby improving both the response speed and fabrication feasibility. The device employs multiwalled carbon nanotubes (MWCNTs) as both the transparent electrode and the LWIR modulator, polyaniline (PANI) as the electrochromic layer, and ionic liquids (HMIM[TFSI]) as the electrolyte. The ECD is able to reduce its infrared emissivity (Δε = 0.23) in a short time (resulting in a drop in infrared temperature from 50 to 44 °C) within a mere duration of 0.78 ± 0.07 s while changing its color from green to yellow within 3 s when a positive voltage of 4 V is applied. In addition, it exhibits excellent flexibility, even under bending conditions. This simplified structure provides opportunities for applications such as wearable adaptive camouflage and multispectral displays.

Performance optimization of ETL-free bifacial perovskite solar cells for flexible devices: A simulation study

The versatile applications of flexible perovskite solar cells (PSCs) have made them promising energy-harvesting devices in our daily lives. The electron transport layer (ETL)-free PSCs offer a flexible approach for harnessing energy while adding a bifacial approach that can further improve the device performance. In our study, we have optimized ETL-free bifacial PSCs via simulation by selecting the suitable front transparent electrode (FTE), hole transport layer (HTL), and rear transparent electrode (RTE). Our investigation reveals that a potential well-like structure, associated with a small conduction band offset (CBO) at the FTE/perovskite interface holds significant potential for enhancing the power conversion efficiency (PCE) of the device. The upward shift in the valance band of HTL promotes recombination and reduces the device performance. The bandgap and electron affinity of RTE highly influence the band alignment at HTL/RTE interface. The NiO/Ag/NiO (NAN) tri-layer RTE provides a better band alignment with HTL, and improves the charge transportation and, hence, the device performance. Moreover, the thickness of the interfacial defect layer at the FTE/perovskite and perovskite/HTL interfaces significantly impacts device performance. In optimizing the perovskite absorber layer, a perovskite bandgap of 1.4 eV shows maximum device performance. Our optimized device shows a remarkable PCE of >27% for both front and rear illumination.