Diamond, renowned for its exceptional heat dissipation properties, stands out as an optimal substrate for tantalum nitride (Ta2N) film resistors. To fully exploit the high thermal conductivity of diamond, we introduce a thin tantalum (Ta) interlayer between the TaN thin film and the polished diamond substrate, aiming to strengthen their bond and enhance the interfacial thermal conductance. Comprehensive morphological and structural analyses, utilizing advanced techniques such as grazing incident X-ray diffraction (GI-XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS), were employed. Electrical properties were measured using a four-point probe, and thermal boundary conductance (TBC) between Ta2N and diamond was assessed through time-domain thermoreflection (TDTR), comparing scenarios with and without the Ta interlayer. Results demonstrate that the Ta interlayer facilitates tantalum carbide (TaxC) formation, improving adhesion and resulting in a remarkable 70 % increase in overall interface TBC. Moreover, the thin Ta interlayer positively influences the overall temperature coefficient of resistance (TCR) of the Ta2N film. Our strategic approach showcases enhanced adhesion and thermal performance, opening promising avenues for elevated functionality and reliability of Ta2N film resistors in high-temperature applications.