In this paper, the supercapacitance applicability of monolayer CrN/CuN heterostructure as a transition metal nitride interface is studied using density functional theory. Moreover, the vacancies, doped, and alloys of this heterostructure are investigated, and their mechanical and structural stabilities are confirmed. In addition, the quantum capacitance and surface charge storage as a function of applied voltage have been calculated. The largest peak of quantum capacitance belongs to the single-side alloy of CrN/VCuN (V atoms in replacement of Cu atoms) with a value of 405.64 μF/cm2 at -0.005 V which suggests an excellent candidate of cathode material for supercapacitance applications. Furthermore, the largest value of the surface charge storage is related to the doped heterostructure of HfCrCN/VCuPN (Hf and C atoms in replacement of Cr and N atoms, V and P atoms in replacement of Cu and N atoms) with a value of -236.27 μC/cm2 at −1 V.
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