Transition-metal chalcogenides can be used as photoconductors and in optoelectronic devices. Research on the electronic properties of KBaSbSe3 has established that the parental compound possesses an indirect band gap of 2.0 eV. By europium doping, the material’s band structure experienced a transformation, resulting in a direct semiconducting behavior. This change was observed in spin-up and spin-down polarizations, with a bandgap of 1.5 eV. An analysis of the electron charge density (ECD) contour of the (101) crystallographic plane has been conducted to examine the bonding characteristics. Based on the reflectivity spectra, it is evident that both compounds exhibit a significant level of reflectivity, making them potentially suitable for shielding against visible and UV radiation. The calculations of birefringence demonstrate the ability to achieve phase matching for both observed compounds. Calculations were performed using Boltzmann transport theory to determine the Seebeck coefficient, Hall coefficient, electrical and thermal conductivities, and figure of merit. The compound KBaSbSe3 exhibits N-type at low temperatures and P-type due to a change in the Seebeck coefficient. Both compounds have excellent optical and thermal responses, making them promising materials for optoelectronic and thermoelectric devices.
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