Achieving an atomically smooth surface on single-crystal silicon carbide (SiC) with a high material removal rate (MRR) is challenging. Traditional chemical mechanical polishing (CMP) often uses aggressive slurries that are inefficient and environmentally hazardous. To address these challenges, we synthesized a novel core-shell structure Fe3O4@MIL-100(Fe) magnetic catalyst and utilized it as a non-homogeneous photo-Fenton catalyst in friction wear tests on SiC wafers within a simulated CMP environment. The catalyst was thoroughly characterized using X-ray diffractometry (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). Additionally, we explored the effects of various components, pH levels, H2O2 concentrations, catalyst concentrations, and light intensities on the friction wear of SiC wafers. The results indicate that, under visible light conditions, Fe3O4@MIL-100(Fe) exhibits a strong Fenton catalytic effect, achieving a maximum material removal rate of 61.076*103μm3/min at a pH of 3, H2O2 concentration of 5 wt%, catalyst concentration of 14 g/L, and light intensity of 500 W. These findings provide valuable theoretical support for visible light assisted catalyzed CMP of SiC.