The topological Hall effect (THE) in general arises from the Berry phase acquired by conduction electrons moving in a noncoplanar spin textures such as skyrmions. In this paper, low-field induced THE is realized in a chiral-lattice B20-ordered Cr0.82Mn0.18Ge alloy. The maximum topological Hall resistivity of ρxyT ≈ −0.048 μΩ cm at T = 10 K is achieved under a low magnetic field of about μ0H = 0.04 T, which reaches up to ~20% of the anomalous Hall effect. Dip/peak anomalies are observed in the field dependence of AC-susceptibility, which indicates the field evolution of the topologically protected nontrivial spin textures. The results manifest that the Cr0.82Mn0.18Ge alloy should host skyrmions and pave the way for searching new skyrmions materials.
Read full abstract