Top Mirror Research Articles

Raman Scattering Enhancement through Pseudo-Cavity Modes.

Raman spectroscopy plays a pivotal role in spectroscopic investigations. The small Raman scattering cross-section of numerous analytes, however, requires enhancement of the signal through specific structuring of the electromagnetic and morphological properties of the underlying surface. This enhancement technique is known as surface-enhanced Raman spectroscopy (SERS). Despite the existence of various proposed alternatives, the approach involving Fabry-Pérot cavities, which constitutes a straightforward method to enhance the electromagnetic field around the analyte, has not been extensively utilized. This is because, for the analyte to experience the maximum electric field, it needs to be embedded within the cavity. Consequently, the top mirror of the cavity will eventually shield it from the external laser source. Recently, an open-cavity configuration has been demonstrated to exhibit properties similar to the classic Fabry-Pérot configuration, with the added advantage of maintaining direct accessibility for the laser source. This paper showcases how such a simple yet innovative configuration can be effectively utilized to achieve remarkable Raman enhancement. The simple structure, coupled with its inexpensive nature and versatility in material selection and scalability, makes it an ideal choice for various analytes and integration into diverse Raman apparatus setups.

A highly stable and efficient organic microcavity polariton laser

With their remarkably low thresholds, organic polariton lasers are a promising alternative to organic photonic lasers. However, device stability remains a challenge, in part due to material degradation during deposition of the top dielectric mirror. We demonstrate polariton lasers based on 4,4′-Bis(4-(9H-carbazol-9-yl)styryl)biphenyl (BSBCz) as active material that achieve a low lasing threshold of 8.7 μJ/cm2, and we show that a ZrO2 protection layer between active layer and top mirror significantly improves stability. Optimized devices exhibit minimal degradation after 100,000 excitation pulses at 3.8 times above threshold. Our findings establish BSBCz as an attractive candidate for future injection driven polariton lasers.Graphical abstract

Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs

Many emerging opportunities, such as three-dimensional (3D) sensing, biophotonics, and optical data links, call for vertical cavity surface-emitting lasers (VCSELs) that operate in the short-wavelength infrared (SWIR) range. In this paper, we report the use of InP distributed Bragg reflector (DBR) mirrors to overcome an impasse in wafer-level mass production of SWIR VCSELs. The DBRs were based on homoepitaxial InP structures and selectively converted through electrochemistry into quarter-wavelength stack structures of alternating nanoporous (NP) and nonporous InP layers with a record index contrast (Δn∼1.0) and near-unity reflectivity. We demonstrated VCSEL operation at both 1380 and 1550 nm from two separate structures prepared on InP substrates using NP–InP DBRs as the bottom mirror and dielectric DBRs as the top mirror. Room temperature continuous-wave (CW) operation of SWIR VCSELs was successfully achieved at both wavelengths with a threshold current density below 2kA/cm2, greater than milliwatt optical output, and a peak power conversion efficiency of 17%. Our work provides strong evidence that the decades-old challenge, in preparing an InP-compatible, high-performance DBR to support the SWIR-emitting vertical cavity, has been addressed and is poised to enable new applications.

(Invited) Applications of Electrochemistry Toward Blue/Green and SWIR-Wavelength VCSELs

Unlike the more established edge-emitting lasers (EELs) with a horizontal Fabry-Perot (FB) cavity, VCSELs have a vertical cavity with highly reflective top and bottom mirrors sandwiching the active region. This design enables wafer-level testing, one- and two-dimensional arrayed integration, and scalability for low- and high-power applications. VCSELs are poised to surpass EELs as a more versatile and intelligent option for semiconductor lasers in the future.Currently commercially available VCSELs only cover the red to near-infrared (NIR) range of 700-1100nm, whereas EELs offer products across a wide spectral range. The optimal active regions for blue and short-wavelength infrared (SWIR) spectra are only supported on GaN and InP substrates, respectively. Lattice-matched, epitaxial mirrors compatible with these two substrates remain major challenges. As a solution, we propose the use of electrochemistry to engineer the refractive index of the material. The innovation is based on the recognition that nanoporous (NP) semiconductor layers can be considered a nanocomposite with nanoscale voids of air uniformly dispersed in a single-crystalline semiconductor, thus rendering a unique way to control the effective optical index with a tunability that is typically un-attainable through epitaxy.We have studied the electrochemistry of semiconductors for applications in photonics, beginning with GaN and most recently with InP. In both material systems, we have discovered a selective porosification process based on the doping concentration. Due to the doping selectivity in EC etching, layers with high doping concentration will be converted to low index nanoporous material with an unprecedented tunability in the refractive index depending on the porosity. Meanwhile, the lightly doped layers remain intact. As a result, highly reflective mirrors were fabricated on GaN and InP substrates with wide stopbands. In this talk, we will provide latest updates in the VCSEL performances in the blue/green and long-wavelength region.

Midwave resonant cavity infrared detectors (RCIDs) with suppressed background noise.

We report a resonant cavity infrared detector (RCID) with an InAsSb/InAs superlattice absorber with a thickness of only ≈ 100 nm, a 33-period GaAs/Al0.92Ga0.08As distributed Bragg reflector bottom mirror, and a Ge/SiO2/Ge top mirror. At a low bias voltage of 150 mV, the external quantum efficiency (EQE) reaches 58% at the resonance wavelength λres ≈ 4.6 µm, with linewidth δλ = 19-27 nm. The thermal background current for a realistic system scenario with f/4 optic that views a 300 K scene is estimated by integrating the photocurrent generated by background spanning the entire mid-IR spectral band (3-5 µm). The resulting specific detectivity is a factor of 3 lower than for a state-of-the-art broadband HgCdTe device at 300 K, where dark current dominates the noise. However, at 125 K where the suppression of background noise becomes critical, the estimated specific detectivity D* of 5.5 × 1012 cm Hz½/W is more than 3× higher. This occurs despite a non-optimal absorber cut-off that causes the EQE to decrease rapidly with decreasing temperature, e.g., to 33% at 125 K. The present RCID's advantage over the broadband device depends critically on its low EQE at non-resonance wavelengths: ≤ 1% in the range 3.9-5.5 µm. Simulations using NRL MULTIBANDS indicate that impact ionization in the bottom contact and absorber layers dominates the dark current at near ambient temperatures. We expect future design modifications to substantially enhance D* throughout the investigated temperature range of 100-300 K.

Metasurface reflector enables room-temperature circularly polarized emission from VCSEL

While most lasers are linearly polarized, circularly polarized laser sources are crucial components for many optical applications such as biosensing, quantum technologies, and AR/VR. However, conventional methods for generating chiral light have limitations in device miniaturization. Vertical-cavity surface-emitting lasers (VCSELs), with their small footprint and surface emission feature, can be integrated with ultrathin metasurfaces for light manipulation, offering an opportunity to realize ultracompact chiral lasers. Here we report, to our knowledge, the first demonstration of chiral lasing from electrically pumped VCSELs at room temperature, without spin injection. This is enabled by incorporating a high-contrast chiral metasurface reflector as the VCSEL top mirror, favoring one specific circular polarization for lasing. Our demonstrated 940 nm VCSELs show stable single-mode chiral lasing and achieve a circular-polarization degree of up to 59%. This study provides a scalable approach for circular-polarization control of VCSELs and holds great promise for applications that desire ultracompact chiral emitters.

Single-Mode-VCSEL With a Ring-Shaped Self-Aligned Recessed Metal Mode Filter

This article presents a single-mode vertical-cavity surface-emitting laser (VCSEL) using a novel ring-shaped self-aligned recessed metal (SARM) mode filter on the emitting window as a means of transverse mode control. The SARM structure acts as a spatial filter to suppress the higher-order transverse modes through selective recessed-etching of the top mirror and the self-aligned deposition of the p-type contact metals for cavity tuning and blocking the higher-order modes. The SARM mode filter could be a potentially high-yield alternative technique for the mass production of single-mode VCSELs, demonstrating a single-mode emission with 1.55-mW power and a 30.7-dB side mode suppression ratio.

GaN-on-Si micro resonant-cavity light-emitting diodes with dielectric and metal mirrors

Micro-LED is a new type of display technology. Its advantages are high resolution, high brightness, long life, low power consumption and so on. However, due to the reduction in size, the proportion of surface damage increases, resulting in a decrease in device performance, which affects the development of Micro-LEDs. In this paper, ion implantation technology and resonant cavity structure are used to reduce device sidewall damage and improve device characteristics. The photoelectric properties of GaN-based blue micro light emitting resonant cavity diodes were studied. Pixel-to-pixel isolation is achieved by fluorine ion implantation. The resonant cavity structure is fabricated by wafer bonding technique. The research shows that the electrical characteristics of the device have realized good stability. Under medium reflectivity conditions, the device enhancement effect is best when the reflectivity of the top mirror is 40%. With the decrease of the size, the enhancement of optical characteristics weakens due to the size effect, and the spontaneous emission intensity of the 10 μm device increases by 212.6%. The FWHM of devices with different sizes narrowed by about 10 nm. The stability of the device peak wavelength and full width at half maximum is improved. Therefore, this paper provides research value for the application of resonant cavity structures in Micro-LEDs.

Performance prediction and determination of optimum optical property of the nanofluid for energy storage in direct absorption solar collectors

A direct absorption solar collector converts solar energy into thermal energy and stores it directly in the working fluid. Usually, a nanofluid is used as the working fluid. This work aims to study the behavior of the collector with wide variations of constructional and operating conditions, and then to arrive at the optimum mean extinction coefficients of the nanofluid for obtaining maximum energy storage efficiency. Some studies on these issues with limited scopes are available in the literature. A generalized way of choosing an optimized mean extinction coefficient of the nanofluid for applications in a direct absorption solar collector is not available elsewhere.The parametric behavior of a direct absorption solar collector is studied through a transient finite difference model that considers radiation and convection heat losses from the top surface and mirror reflection from the bottom. Node-wise transient energy equations are developed in terms of the mean extinction coefficient of the working fluid. The optimized mean extinction coefficient points, corresponding to the maximum energy storage efficiency under one sun incident illumination, are identified over a large number of parametric computations. These data show that the optimum mean extinction coefficient decreases with fluid height and illumination time. Correlations for optimum mean extinction coefficient as functions of fluid height and illumination time are derived through regression analyses over the maxima points. A simplified time-averaged correlation solely as a function of fluid height is also presented. In addition, an average optical thickness, a product of the fluid height and optimum mean extinction coefficient, of 2.35 is recommended while using a fluid height between 20 and 80 mm. It is expected that this work would enable one not only to understand the parametric behavior of the collector but also to design it optimally.

Electro-Optical Coupling in Double Diode Structures

Alternative types of artificial cooling techniques are of large interest for multiple applications. Here, we develop a framework for studying the role of electro-optical coupling in the analysis of solid-state refrigerators based on electroluminescent cooling (ELC) by combining device measurements with optical simulations. The studied device consists of a light-emitting diode (LED) epitaxially connected to a photodetector (PD) in a double-diode structure (DDS). Previous results of the DDS have indicated that the LED side already operates at conditions corresponding to ELC, but Ohmic losses and imperfect photodetection of the LED light in the PD have prevented observing the effect directly. Here, to break down the detection losses of the DDS, we report on the electro-optical response of the LED and the PD in detail, as well as the role of the spectral coupling from the LED to the PD. We present a detailed framework for combining measurements and simulations of the DDS to gain quantitative insight of the electro-optical response of the LED and PD, as well as the coupling between them, including the analysis of effects that are not directly accessible by standard measurements. The developed approach allows identifying the different photodetection loss mechanisms from the current-voltage and electroluminescence measurements and thereby gives guidance for designs toward a direct demonstration of ELC at practically relevant cooling powers. Somewhat surprisingly, the results show that an imperfect spectral absorption efficiency of the PD, in addition to its below unity quantum efficiency, are together required to explain the previously observed low photodetection efficiency of the DDS even for several microns thick PD structures. In comparison, the LED top mirror introduces only a minuscule drop in photodetection efficiency. Put in plain numbers, our analysis reveals that in the current DDS designs, there is headroom by 14% in the spectral matching between the LED and the PD, 5% in the charge collection efficiency of the PD, and 4% in the efficiency at which photons emitted from the LED reach the PD.

Electromagnetic Analysis of Water Spectra in Bulk and Film Forms at Terahertz Frequencies in a Modified Attenuated Total Reflection Configuration

Terahertz attenuated total reflectance (THz-ATR) is being extensively used for spectroscopy and imaging applications in materials science, chemistry, and biomedical research. One of the driving motivations is its potential for studying protein dynamics, identifying living tissues, or detecting herbicide traces, as a non-destructive and non-ionizing technique. It is well known that studying biological and chemical samples in the terahertz range represents a real challenge because of the presence of water, which is highly absorbing. In this work, we present experimental data from THz-ATR spectroscopy of water in the 1-15 THz frequency range and propose an insightful interpretation of the optical phenomenon that is taking place in this experiment, supported by finite-element-method simulations and an analytical model. Interestingly, this study reveals that there is no evanescent field at the interface between the ATR prism and water, but that a refracted beam is propagating through the water, independently from the value of the angle of incidence. These findings allowed an important improvement in the signal intensity after a simple modification of the accessory, by creating a thin film of micrometer thickness with a top mirror. We believe that this technique could lead to highly sensitive terahertz microfluidic systems for chemical and biomolecular detection.

Room-Temperature Continuous-Wave Microcavity Lasers from Solution-Processed Smooth Quasi-2D Perovskite Films with Low Thresholds

Continuous-wave (CW) lasing in quasi-two-dimensional (2D) perovskite-based distributed feedback cavities has been achieved at room temperature; however, CW microcavity lasers comprising distributed Bragg reflectors (DBRs) have rarely been prepared using solution-processed quasi-2D perovskite films because the roughness of perovskite films significantly increases intersurface scattering loss in the microcavity. Herein, high-quality spin-coated quasi-2D perovskite gain films were prepared using an antisolvent to reduce roughness. The highly reflective top DBR mirrors were deposited via room-temperature e-beam evaporation to protect the perovskite gain layer. Lasing emission of the prepared quasi-2D perovskite microcavity lasers under CW optical pumping was clearly observed at room temperature, featuring a low threshold of ∼1.4 W cm-2 and beam divergence of ∼3.5°. It was concluded that these lasers originated from weakly coupled excitons. These results elucidate the importance of controlling the roughness of quasi-2D films to achieve CW lasing, thus facilitating the design of electrically pumped perovskite microcavity lasers.

Spontaneously implemented spatial coherence in vertical-cavity surface-emitting laser dot array

We report a self-induced spatially-coherent dot array consisting of fourteen units of vertical-cavity surface-emitting modes that exhibit spatially uniform spectra. A 47.5 µm total beam width and 0.5° narrow emission are achieved using an oblong cavity enclosed with a flat top mirror, cylindrically curved bottom mirror, and side facet. Notably, terminating the side of the cavity with a perpendicular facet enhances the horizontal propagation, which couples with the vertical resonance in each dot, similar to the case of master lasers in injection-locked lasers that delocalize the modes. Conventional semiconductor lasers, edge-emitting lasers, and vertical-cavity surface-emitting lasers have a Fabry–Pérot cavity; furthermore, emission and resonance are in identical directions, limiting the beam width to micrometers. Though the present structure has the same scheme of propagation, the right-angled facet synchronizes the modes and drastically expands the beam width.

Modal characteristics of coupled vertical cavity surface emitting laser diode arrays

The modal characteristics of dual-element coupled vertical cavity surface emitting laser (VCSEL) arrays are analyzed numerically and experimentally. A photonic crystal pattern etched into the top mirror optically defines the two elements of the array that are independently electrically biased. Using a two-dimensional complex waveguide analysis, we incorporate the effects of varying temperature and electron plasma-induced index suppression arising from asymmetric injection. The simulations are compared to experimental characterization of output power, lasing spectra, and far-field beam profile as a function of the two independent injection currents. Three distinct operating regimes are identified for the arrays: single independent local mode; a region of two modes that are primarily localized into a specific cavity; and a region of two supermodes whose fields extend across both elements. This analysis provides a physical intuition for the behavior of the dual-element coupled VCSEL array across its full operating range for emerging applications.

High Quality Factor Microcavity for Van der Waals Semiconductor Polaritons Using a Transferrable Mirror

AbstractSemiconductor microcavities with a high quality‐factor are an important component for photonics research and technology, especially in the strong coupling regime. While van der Waals semiconductors have emerged as an interesting platform for photonics due to their strong exciton–photon interaction strength and engineering flexibility, incorporating them in photonic devices requires heterogeneous integration and remains a challenge. This study demonstrates a method to assemble high quality factor microcavities for van der Waals materials, using high reflectance top mirrors which, similar to van der Waals materials themselves, can be nondestructively and reliably peeled off the substrate and transferred onto the rest of the device. Microcavities are created with quality factors consistently above 2000 and up to 11000 ± 800; and the strong coupling regime is demonstrated. The method can be generalized to other types of heterogeneously integrated photonic structures and will facilitate research on cavity quantum electrodynamic and photonic systems using van der Waals materials.

(Invited) Achieving High-Power Single-Mode Operation in Vertical-Cavity Surface-Emitting Lasers Via Scalable, Higher-Order Mode Suppression Techniques

Achieving high-power single-mode operation in Vertical-Cavity Surface-Emitting Lasers (VCSELs) has received renewed interest because of applications that span facial recognition and 3D imaging in mobile telephones, Light Detection and Ranging (LiDAR) for autonomous vehicles, and Pulse Amplitude Modulation (PAM-4) for high-speed (>100 Gbps) data transmission within data centers. A key challenge with oxide-confined VCSELs is that the strong refractive index contrast between the oxidized ~AlAs aperture and surrounding AlGaAs layers combined with the oxide aperture size create a photonic cavity that fundamentally supports multiple transverse modes. When the size of the aperture is reduced to create a single-mode cavity, the output power is limited by the electrically pumped gain region within the aperture. There is thus a fundamental trade-off between size and power which manifests itself in a limited capability to simultaneously achieve high power and single mode operation. Various methods have been employed by groups working on VCSELs to overcome this limitation. Neglecting external cavity methods which are fundamentally not scalable, the most promising results have been achieved by groups using etched surface relief where a pattern is etched in the top layer or layers to change the standing wave pattern in the cavity and reduce modal gain by lowering the magnitude of the electric field in regions overlapping with the quantum wells, which provide laser gain. A downside of this approach is that material is removed, impacting the uniformity of current injection across the area of the device. A key question of interest is therefore how to achieve mode suppression in large area devices in a way that does not impact current injection. In this presentation, novel methods for mode control that rely on spatial variation of modal gain across the area of the VCSEL aperture will be discussed, and results on high-power single-mode operations of VCSELs will be presented. Two distinct mode control methods will be reviewed. The first method of mode control uses deposited optical coatings on the top surface of the VCSEL to spatially modify the electric field standing wave in the quantum well heterostructure region. Through patterning the coating in either a pillar or anulus, specific modes can be suppressed by selectively changing the gain available for those modes. These filters have been made using both SiO2/TiO2 stacks and alternatively a single layer of silicon. The capability to pattern these layers in a wafer-scale process makes this method attractive for volume manufacturing. The second method of mode control utilizes impurity-induced layer disordering via patterned diffusion of Zn to selectively intermix Distributed Bragg Reflector (DBR) layers, thereby creating a top laser mirror whose reflectivity varies spatially across the aperture. Designing the diffused region to maximize overlap with high-order modes while minimizing overlap with the fundamental mode provides mode suppression and enhanced single-mode power. An added benefit of this approach is a reduction in resistance through the device top DBR layers brought about by the higher p-doping level in the Zn-diffused regions, minimizing Ohmic losses and heat generation. Through the use of strain control in the diffusion mask, diffusion front shape is also shown to be controllable in a way that can be used to minimize the impact of the diffused region on fundamental mode reflectivity. Tensile and compressive strain of diffusion masks are shown to have differing effects on vertical (into the device) versus lateral (across the area of the device under the mask) diffusion, allowing more precise spatial control of reflectivity. Using these methods, single-mode output powers in excess of 10 mW have been demonstrated, with side-mode suppression ratios in excess of 30 dB. These results will be discussed, as well as further work to enhance VCSEL performance. Figure 1

Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission.

A novel, to the best of our knowledge, gallium nitride (GaN)-based resonant cavity light-emitting diode (RCLED) with single-longitudinal-mode light emission was demonstrated. A Ta2O5/SiO2 dielectric distributed Bragg reflector (DBR) with a filter-film structure was adopted as the top mirror. In contrast to the flat-topped reflectivity spectrum of the conventional high-reflective-structure DBR, for this filter-film-structure DBR, there is a light-transmitting concave band on the reflectivity spectrum. Owing to the modulation effect of this band on the output light, a single-longitudinal-mode light emission with a full width at half maximum as low as 0.63 nm was realized. Furthermore, the novel RCLED exhibited better wavelength stability. With an increase in the injection current from 50 to 500 mA, the redshift of the emission peak was only 0.2 nm. This novel RCLED with ultra-narrowband emission has a high potential for application in optical communication systems and optical fiber sensing applications.

Low-loss fiber grating coupler on thin film lithium niobate platform

A grating coupler with a high coupling efficiency and low back reflections is designed and demonstrated on the thin film lithium niobate platform, which facilitates an efficient interface between a lithium niobate ridge waveguide and a standard single mode fiber. The excellent performances of the present grating coupler are enabled by a cavity-assisted grating structure and a top metal mirror, even though a uniform grating is adopted as the diffractive element. Experimentally, a coupling loss of −0.89 dB at 1552 nm is demonstrated with a 1-dB bandwidth of 45 nm. Low back reflections of <−16.5 dB to the waveguide and <−13.7 dB to the fiber are also achieved from 1536 to 1579 nm.

Design, Modeling, and Characterization of Hot Electron Light Emission and Lasing in Semiconductor Heterostructure-VCSOA with Optical Gain up to 36 dB

Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for optical communication applications. In this work, we have studied the characteristics of gain spectra and amplifier bandwidth in reflection mode at 1300 nm GaInNAs/GaAs hot electron light emission and lasing in semiconductor heterostructure-VCSOA structure using MATLAB program. The device contains 16 Ga0.7In0.3N0.038As0.962 multiple quantum wells (QWs) in its intrinsic region; the active region is bounded between eight pairs of GaAs/AlAs top distributed Bragg reflectors (DBRs) mirror and 25 pairs of AlAs/GaAs bottom DBRs mirror. Simulation results suggest that the resonance cavity of QW of HILLISH-VCSOA is varied with temperature and number of DBRs periods. We compare the relation between the wavelength and gain at a different single-pass gain in both reflection and transmission modes. The highest gain at around 36 dB is observed in reflection mode. Moreover, we calculated the amplifier bandwidth at different periods of top mirror’s reflectivity, in which when the peak reflection gains increases, the amplifier bandwidth decreases.

GaN-based green resonant-cavity light-emitting diodes with Al mirror and copper plate.

In this Letter, GaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a low-cost aluminum (Al) metal bottom mirror, a dielectric top mirror, and a copper (Cu) supporting plate were fabricated. The green-emitting epitaxial wafer was grown on a patterned sapphire substrate (PSS) to ensure high crystal quality (CQ). Laser lift-off (LLO) of the PSS and electrical plating of a Cu supporting plate were then carried out to realize the vertical device structure. The emission wavelength and full width at half maximum (FWHM) of the main emission peak of the device are ∼518 nm and 14 nm, respectively. Under the current density of 50 A/cm2, a relatively high light output power (LOP) of 11.1 mW can be obtained from the green RCLED. Moreover, when the current injection is 20 mA (8 A/cm2), the corresponding forward bias voltage is as low as ∼2.46 V. The reasons for the low operating voltage and high LOP can be attributed to the improvement of CQ, the release of residual compressive stress of the GaN-based epilayer due to the removal of PSS, and better heat dissipation properties of the Cu supporting plate.