The diffusion behavior of titanium (Ti) in copper (Cu) films was studied. Cu films were deposited on Ti substrate by the r. f. magnetron sputtering method.When the deposited Cu film was heated above 630 K in a vacuum, the substrate element Ti diffused through the Cu film very rapidly and concentrated on the surface of the Cu film. The diffusion coefficient was obtained by measuring the time required to diffuse. The pre-exponential factor of the diffusion coefficient was 3.5×10−5 m2 s1, and the activation energy was 127 kJmol−1. The obtained activation energy is about 65% of that of Ti in the bulk Cu.Above 800 K, after Ti diffused rapidly onto the surface of the Cu film, intermetallic compounds were formed at the interface between the Cu film and the Ti substrate. The intermetallic compounds formed were γ-TiCu, Ti3Cu4 and TiCu3. It has been reported that Ti2Cu, γ-TiCu, Ti3Cu4, Ti2Cu3, TiCu2 and Ti2Cu7 are formed from ‘bulk cu’-‘bulk Ti’ couple. In this work, from the ‘film Cu’-‘bulk Ti’ couple, we did not observe the formation of Ti2Cu, Ti2Cu3, TiCu2 and Ti2Cu7. We observed the formation of TiCu3 which is not formed from the ‘bulk Cu’-‘bulk Ti’ couple.
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