Abstract The superior air and temperature stability and the cheap production costs of the inorganic CsPbBr3 solar cell (PSC) were major concerns. For inorganic CsPbBr3 devices, TiO2 crystals (c-TiO2) are frequently used as an electronic transfer layer (ETL). However, because c-TiO2 preparation necessitates temperatures over 450°C, the flexible inorganic device CsPbBr3 cannot be used. In addition, the low mobility of electrons further limits the ability to improve device performance. On this basis, a novel amorphous Nb2O5 (a-Nb2O5) was prepared. This paper introduces a simple method of preparing inorganic planar CsPbBr3 devices by room temperature sputtering. The highest efficiency of PSC prepared with a-Nb2O5 ETL was 5.74%, which was higher than that of crystalline Nb2O5 (a-Nb2O5) or crystalline TiO2 (c-TiO2) based PSC (5.12% or 4.67%). The photovoltaic properties of CsPbBr3 PSC prepared by a-Nb2O5 ETL were improved. The causes might be attributed to the following: excellent crystallization of the films made from a-Nb2O5 and CsPbBr3, low charge recombination rate of the a-Nb2O5/CsPbBr3 interface, strong optical transmission, and appropriate operating function of a-Nb2O5. In addition, PSC CsPbBr3 based on unpackaged a-Nb2O5 has good long-term stability in the atmosphere. This work offers a fresh line of inquiry for producing extremely effective inorganic PSC.
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