The paper describes the preparation of the nanocomposite resistive material formed of solid dispersion of fullerene-modified silicon nanoparticles Si-C60 tightly embedded in the Sn metal matrix. Nanoparticles of semiconductive silicon were manufactured top-down in a cavitation high-energy liquid jet disintegrator—the Water Jet Mill. They were further modified with fullerene C60 molecules in water dispersion and freeze dried in vacuum. After dry vibration milling with < 100 nm nanoparticles of metallic tin the output powder was cold pressed into tablets. These were further subjected to the pressure of 2.5 GPa at the temperature of 250 � C for 30 minutes. The solid resistive material prepared in this way consists of very fine metallic tin structure in between the nanoparticles. We expect that this complex nanostructure will substantially strengthen the interactions of conductive electrons with the structure defects of metallic tin. Our goal is to investigate if it is possible to reinforce the temperature-independent structure component of the composite resistivity with respect to its temperature-dependent phonon-electron interaction component. The resistivity of the nanocomposite material was measured in the temperature range from −50 � C to 160 � C. At the interval of approximately 75 � C to 110 � C it exhibits relatively flat minimum, where the resistivity is almost