Fast carrier dynamics in organic thin-film transistors (OTFTs) was investigated by time-resolved electrostatic force microscopy (tr-EFM). We found that the carrier diffusion in the OTFTs proceeded in two stages: fast diffusion and slow diffusion. By applying the instantaneous frequency method to EFM, the temporal evolution of the spatial distribution of fast carriers in the channel region of the OTFTs, which took place on the timescale of several hundreds of nanoseconds, was evaluated. The inhomogeneous distribution of the local decay time constant showed that the carrier diffusion of the OTFTs was limited by the grain boundaries between each crystalline region. The quantitative capability of the method was verified by comparing the values of the carrier mobility estimated by the tr-EFM measurement and a numerical simulation. The mobility estimated from the experiment and the simulation showed good agreement, showing the possibility of the tr-EFM to evaluate the time evolution of dynamic phenomena in semiconductor devices.
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