Abstract
We propose a base-bias-level control method, in which the contact potential difference is always compensated in a similar way to Kelvin probe force microscopy, applicable to time-resolved electrostatic force microscopy using the pump–probe method. We experimentally acquired temporal waveforms of the electrostatic force signal on two SiO2/n-type Si samples, one of which was as-grown and the other was treated by forming gas annealing. Consequently, the effectiveness of the proposed method was confirmed.
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