Time-domain Thermoreflectance Technique Research Articles

Electronic vs phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Understanding the thermal conductivity of chromium-doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium-doped V2O3 across varying concentrations, spanning the doping-induced metal–insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%–30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600–1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80–450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3.

Electron–phonon coupling and non-equilibrium thermal conduction in ultra-fast heating systems

A discrete unified gas kinetic scheme is developed to solve the Boltzmann transport equation (BTE) with coupled electron and phonon thermal transport, whose time step is not limited by the relaxation time. The key of the present scheme is that the electron/phonon advection, scattering and electron–phonon interactions are coupled together within one time step by solving the BTE again at the cell interface. Numerical results show that the present scheme can correctly predict the electron–phonon coupling effects, and is in agreement with typical two-temperature model and experimental results in existing literatures and our performed time-domain thermoreflectance technique. It can also capture the ballistic effects when the characteristic length is comparable to or smaller than the mean free path where the two-temperature model fails. In addition, two anomalous heat conduction phenomena are predicted by the present scheme, namely, heat flows from phonon to electron in transient thermal grating geometry and re-rise reflected signal appears in Au/Pt bilayer metal structure. The present work can provide theoretical guidance for the study of electron–phonon coupling and offer a useful tool for multi-scale thermal management.

Investigation of interfacial thermal resistance between Bi2Te3 thin films and metal electrodes via TDTR

A challenge on promoting thermoelectric application is the low energy conversion efficiency of thermoelectric devices. Reducing the contact thermal resistance of a thermoelectric device can improve efficiency effectively. However, study on interfacial thermal transport is lack due to the difficulty on contact thermal resistance measurement. Herein, a study on contact thermal resistance between thermoelectric and electrode materials was reported. We prepared various heterostructures of Bi2Te3–Cu and Bi2Te3–Ni via magnetron sputtering, and measured the contact thermal resistance using a time-domain thermoreflectance technique. Our results show that the contact thermal resistance is affected by both chemical and physical properties of interface. The chemical and physical stability of interfaces, the surface roughness and porosity of films, as well as electrical properties of Bi2Te3, are all related to the contact thermal resistance. The contact thermal resistance of Bi2Te3–Ni prepared at 400 °C can be reduced to 3.96 × 10−7 m2KW−1. Our work provides important experimental data and theoretical basis for optimizing the interlayer between thermoelectric materials and electrodes, and improving energy conversion efficiency of thermoelectric devices.

Using transducerless time-domain thermoreflectance technique to measure in- and cross-plane thermal conductivity of nanofilms

Time-domain thermoreflectance (TDTR) and frequency-domain thermoreflectance techniques have been widely used to measure thermal properties. However, the existence of the metal sensor brings some limitations to the experimental measurement, such as temperature limits, disability to measure low in-plane thermal conductivity, in situ measurement cannot be achieved, etc. This paper proposes a transducerless time-domain thermoreflectance method to measure in- and cross-plane thermal conductivity of nanofilms, in which the optical absorption depth and thermal conductivity tensor are considered to establish a new differential equation that can describe the heat conduction process in multilayer structures. This thermal model can also calculate the effects of spot ellipticity and spot offset distance. Then, the analytical solution and relative deviation of this new model and the surface heat flow boundary model used in conventional TDTR are compared by calculating the phase signals. In terms of experimental measurement, this model is successfully used to derive cross- and in-plane thermal conductivity of PdSi and IrNiTa amorphous alloy nanofilms without a metal sensor.

Heat Transport in Clathrate Hydrates Controlled by Guest Frequency and Host-Guest Interaction.

The underlying mechanism of common limited lattice thermal conductivity (κ) in energy-related host-guest crystalline compounds has been an ongoing topic in recent decades. Here, the guest-triggered intrinsic ultralow κ of the representative xenon clathrate hydrate was investigated using the time domain thermoreflectance technique and theoretical calculations. The localized guest modes were observed to hybridize with acoustic branches and severely limit the acoustic κ contribution. Besides, the strong mode coupling enables the reshaping of the overall lattice dynamics, especially for optical branches. More importantly, we identified that guest fillers prompt great phonon scattering in wide frequencies, which originates from both the guest-frequency-controlled enhancement of phase space and the host-guest-interaction-governed lattice anharmonicity. The extremely low guest frequency and strong host-guest interaction and coupling were thereby underlined to play vital but distinct roles in κ minimization. Our results unveil the dominant factors of guest reduction effects and facilitate the design of efficient thermoelectric or other thermal-related materials.

Quantifying Interfacial Bonding Using Thermal Boundary Conductance at Cubic Boron Nitride/Copper Interfaces with a Large Mismatch of Phonon Density of States.

Interfacial bonding that directly influences the functional and mechanical properties of metal/nonmetal composites is commonly estimated by destructive pull-off measurements such as scratch tests, etc. However, these destructive methods may not be applicable under certain extreme environments; it is urgently necessary to develop a nondestructive quantification technique to determine the composite's performance. In this work, the time-domain thermoreflectance (TDTR) technique is applied to study the inter-relationship between interfacial bonding and interface characteristics through thermal boundary conductance (G) measurements. We think that interfacial phonon transmission capability plays a decisive role in influencing interfacial heat transport, especially for scenarios with a large mismatch of phonon density of states (PDOS). Moreover, we demonstrated this method at (100) and (111) cubic boron nitride/copper (c-BN/Cu) interfaces by both experimental and simulation efforts. The results show that the TDTR-measured G of the (100) c-BN/Cu interface (30 MW/m2·K) is about 20% higher than that of the (111) c-BN/Cu (25 MW/m2·K), which is ascribed to that higher interfacial bonding of the (100) c-BN/Cu endows it with better interfacial phonon transmission capability. In addition, detailed comparison of 10+ other metal/nonmetal interfaces exhibits similar positive relationship for interfaces with a large PDOS mismatch but negative relationship for interfaces with a small PDOS mismatch. The latter one is attributed to that extra inelastic phonon scattering and electron transport channels abnormally promoting interfacial heat transport. This work may provide some insights into quantitatively establishing inter-relationship between interfacial bonding and interface characteristics.

Anisotropic thermal property characterizations and optical phonon contribution analysis of ZnO under high pressure

Zinc oxide (ZnO) is a wide band-gap semiconductor material with versatile applications in high-tech fields. Under high pressure, ZnO exhibits multiple phase transitions, which are of great significance for the development of photocatalysts, micro-devices with stress-controlled elements, and the investigation of relevant structure-activity relationships. However, previous studies have reported only theoretical calculations of its thermal transport properties under high pressure due to the challenges of experimental methodology. In this work, we employed a combination of the time-domain thermoreflectance technique and diamond anvil cell to characterize the anisotropic thermal properties of ZnO crystal under 0–20 GPa. Simultaneously, we studied the micro-structure of ZnO in the same pressure range by Raman spectra. Our proposed modified Leibfried-Schlomann equation adequately explained the non-monotonic trend of the thermal conductivity within 10 GPa observed in measurement results. Additionally, we report the ZnO thermal conductivity during the decompression process for the first time. Our experimental results and theoretical analysis advance the understanding of the thermal transport mechanism of wide-gap semiconductors under high pressure and pave the way for their high-pressure modification.

Adaptable thermal conductive, high toughness and compliant Poly(dimethylsiloxane) elastomer composites based on interfacial coordination bonds

Compliant elastomers have been widely used in industry and daily life benefited from their large reversible deformability. But poor thermal conductivity and toughness of unfilled elastomers usually limit their use in thermal management. The most common method to increase these properties is to incorporate thermally conductive fillers to polymeric materials. However, thermally conductive network formed by the large of fillers not only decreases the elastomeric compliance, but may also damages the toughness. Herein, to study the effect of polymer/filler interfacial interaction on thermal and mechanical properties, we choose shorter poly(dimethylsiloxane) without entanglement to construct elastomer composites by non-covalent interfacial carboxyl/aluminum and carboxyl/zinc oxide coordination bonds. Time-domain thermoreflectance technique demonstrates that the strong interfacial interaction leads to reduced interfacial thermal resistance between polymeric materials and fillers, resulting in enhanced thermal conductivity of the elastomer composites. Otherwise, two independent dynamic coordination bonds have been investigated on temperature- and frequency-sweep rheometer. The results reveal that the elastomer composites can counteract the negative effect of high filler content on toughness and compliance according to energy-dissipation of dissociation and generation of dynamic coordination bonds. Thanks to the enhanced interfacial interaction, our material shows high toughness (1073 J/m2), thermally conductive (2.37 W/(m·K)), compliant (stress is 0.11 MPa and elongation break is 910%) and fully reprocess. For the application as thermal interface materials, we demonstrate effective heat dissipation on chip and LED. Our present work suggests that the design principles based on interfacial coordination interaction can be applied to the development of new classes of elastomer composites.

Thermal transport across graphene/GaN and MoS2/GaN interfaces

Graphene/GaN and MoS2/GaN have important applications in optoelectronic devices. The two-dimensional (2D) materials greatly improves the device performance due to its overwhelming advantages. 2D materials introduce multiple interfaces while improving device performance. With the miniaturization of devices, the interfacial thermal transport has crucial effect on the performance and lifetime of optoelectronic devices. The interfacial thermal conductance of Al/graphene/GaN and Al/MoS2/GaN are measured by the time-domain thermoreflectance (TDTR) technique from 100 K to 400 K. The density of states and spectral thermal conductance are calculated based on nonequilibrium molecular dynamics (NEMD) simulations to understand the underlying thermal transport mechanism. The overlap energy is used to understand the thermal transport efficiency. Most interesting, the results are opposite to that measured by TDTR. Moreover, the spectral thermal conductance and phonon dispersion are used to understand the thermal transport mechanism in frequency domain. The results provide experimental and theoretical guidance for thermal management of optoelectronic devices.

Effective interface engineering for phonon manipulation in an Al/ErAs/GaAs system

Interface, an effective means of phonon manipulation, is an important concept to be clarified in the study of interfacial thermal transport. In this work, we have used semi-metallic ErAs in a variety of forms to modify the morphology of an Al/GaAs interface so is the interfacial thermal resistance. Using the time-domain thermoreflectance technique, we have measured the interfacial thermal conductance and demonstrated effective phonon manipulation in this Al/ErAs/GaAs system. As the ErAs thickness changes, we have observed clear transitions of phonon behaviors from ballistic to diffusive. The ErAs thickness for ballistic transport is determined to be up to 30 nm in this material system. The thickness dependent thermal conductivity of ErAs is also determined and the electron contribution is estimated to be about 50–60% in the total thermal conductivity.

Defect-modulated thermal transport behavior of BAs under high pressure

Boron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure.

Cellulose-inorganic hybrids of strongly reduced thermal conductivity

The employment of atomic layer deposition and spin coating techniques for preparing inorganic–organic hybrid multilayer structures of alternating ZnO-CNC layers was explored in this study. Helium ion microscopy and X-ray reflectivity showed the superlattice formation for the nanolaminate structures and atomic force microscopy established the efficient control of the CNCs surface coverage on the Al-doped ΖnO by manipulating the concentration of the spin coating solution. Thickness characterization of the hybrid structures was performed via both ellipsometry and X-ray reflectivity and the thermal conductivity was examined by time domain thermoreflectance technique. It appears that even the incorporation of a limited amount of CNCs between the ZnO laminates strongly suppresses the thermal conductivity. Even small, submonolayer amounts of CNCs worked as a more efficient insulating material than hydroquinone or cellulose nanofibers which have been employed in previous studies.

Interfacial Thermal Conductance between Cu and Diamond with Interconnected W-W2C Interlayer.

Manipulating the interfacial structure is vital to enhancing the interfacial thermal conductance (G) in Cu/diamond composites for promising thermal management applications. An interconnected interlayer is frequently observed in Cu/diamond composites; however, the G between Cu and diamond with an interconnected interlayer has not been addressed so far and thus is attracting extensive attention in the field. In this study, we designed three kinds of interlayers between a Cu film and a diamond substrate by magnetron sputtering coupled with heat treatment, including a W interlayer, an interconnected W-W2C interlayer, and a W2C interlayer, to comparatively elucidate the relationship between the interfacial structure and the interfacial thermal conductance. For the first time, we experimentally measured the G between Cu and diamond with an interconnected interlayer by a time-domain thermoreflectance technique. The Cu/W-W2C/diamond structure exhibits an intermediate G value of 25.8 MW/m2 K, higher than the 19.9 MW/m2 K value for the Cu/W2C/diamond structure and lower than the 29.4 MW/m2 K value for the Cu/W/diamond structure. The molecular dynamics simulations show that the G of the individual W2C/diamond interface is much higher than those of the individual Cu/diamond and W/diamond interfaces and W2C could reduce the vibrational mismatch between Cu and diamond; however, the G of the Cu/W2C/diamond structure is reduced by the lower thermal conductivity of W2C. This study provides insights into the relationship between the interconnected interfacial structure and the G between Cu and diamond and offers guidance for interface design to improve the thermal conductivity in Cu/diamond composites.

Interfacial Coordination Interaction Enables Soft Elastomer Composites High Thermal Conductivity and High Toughness.

Soft elastomers have attracted wide applications, such as soft electronic devices and soft robotics, due to their ability to undergo large deformation with a small external force. Most elastomers suffer from poor toughness and thermal conductivity, which limits their use. The addition of inorganic fillers can enhance the thermal conductivity and toughness, but it deteriorates the softness (low Young's modulus and high stretchability). Integrating thermal conductivity, toughness, and softness into one elastomer is still a challenge. Here, we report a strategy of interfacial coordination interaction to achieve soft elastomer composites with high thermal conductivity and high toughness. We demonstrate the strategy by using poly(lipoic acid) elastomer and silver-coated aluminum filler as model, where silver-sulfur coordination cross-links are formed at the interface. The resultant elastomer composite shows high streachability (450%), high thermal conductivity (2.35 W m-1 K-1), low modulus (321 kPa), and high toughness (3496 J m-2), which cannot be achieve in existing elastomers. The time domain thermoreflectance technique demonstrates that the silver-sulfur coordination interaction lowers the interfacial thermal resistance, resulting in enhanced thermal conductivity of the elastomer composites. The excellent softness stems from lower bonding energy of the silver-sulfur coordination cross-links compared with covalent chemical cross-links. The high toughness also benefits from the interfacial silver-sulfur coordination interaction that can dissipate more energy upon deformation. We further demonstrate the potential application of the thermally conductive, tough, and soft elastomer composites for thermal management of chip and soft electronic devices.

Photothermal phenomenon: Extended ideas for thermophysical properties characterization

The photothermal phenomenon involves material photon heating in the form of continuous waves, modulated waves, or pulses. The resulting temperature rise carries very rich information about the material's structures and thermophysical properties. This review is constructed to cover some of the extended ideas of the photothermal phenomenon for measuring a material's thermophysical properties and interface thermal conductance/resistance. For frequency-domain photothermal phenomena, the photoacoustic (PA) and photothermal radiation (PT) techniques provide great ways to measure coatings and suspended samples, which can also be measured using the laser flash and time-domain thermoreflectance (TDTR) techniques. Thermal probing based on electrical thermal sensing is successfully implemented in the transient photo-electro-thermal (TPET) and pulsed laser-assisted thermal relaxation (PLTR) techniques, which significantly extend the capability of laser flash technique to micro/nanoscale 1D structures. The energy transport state-resolved Raman (ET-Raman) is distinct from traditional techniques in its material-specific thermal sensing capability and integral way of ultrafast thermal sensing. Detailed physics discussions are provided for all these techniques, including their advantages and limitations. Still, large development rooms exist for the relatively new techniques, including TPET, PLTR, and ET-Raman. These include measurements under extreme situations, sensitivity improvement, and distinguishing conjugated physical processes.

Synergistically enhanced interface stability by graphene assisted copper surface reconstruction

Graphene (Gr)/Copper (Cu) composites have shown great potential in thermal-management and information-transport applications. The influences of interface related characteristics, such as orientation, adhesion energy and localized strain are of great importance, however, rarely reported. In this work, by conducting heavy ions irradiation and thermal boundary conductance characterization (by time-domain thermoreflectance technique), we examined the intrinsic relationship between microstructural characteristics and interface stability of various Gr/Cu interfaces, such as Gr/{100} Cu, Gr/{111} Cu, and Gr/{111}/{100} Cu. Here we report: (1) compared to Gr/{111} Cu interfaces, Gr/{100} Cu interfaces exhibit higher defect sink capability, and (2) Gr/{111}/{100} Cu interfaces possess both high defect sink capability and good interface stability. Our atomistic simulations suggest higher interface volumetric stress of Gr/{100} Cu interface. The synergistic enhancement of Gr/{111} Cu and {111}/{100} Cu interfaces is attributed to coherent interface generated by Gr assisted Cu surface reconstruction. The present findings may provide more insight to understand the interface characteristics-stability relation of carbon/metal composites.

Ultralow thermal conductivity in tetrahydrofuran clathrate hydrate

The detailed knowledge of the low thermal conductivity of host–guest compounds is essential to improve our fundamental understanding of heat conduction in complex solids and develop high-performance thermoelectric materials. In this Letter, the intrinsic ultralow thermal conductivity (0.44 ± 0.06 W m−1 K−1 in 140–190 K) of the tetrahydrofuran (THF) clathrate hydrate is characterized by the time-domain thermoreflectance technique. The underlying heat conduction mechanism is further investigated by non-equilibrium molecular dynamics simulations. We find that trapped THF molecules do harmonic motions and behave as parts of a crystalline structure, thus playing negligible roles in thermal conductivity reduction. The large unit cell and complex cage-like host structure dominate the low thermal conductivity of the THF hydrate.

Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes

Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes.

Preparation of diamond/copper composites modified by Ti3C2Tx as interlayer with enhanced thermal conductivity

Thermal conductivity (TC) of diamond/copper (Dia/Cu) composite can be improved by surface metallization and matrix alloying, both of which still remain challenging in control of thickness and composition of carbide interlayer. Here, a two dimensional (2D) MXene (Ti3C2Tx) is selected as an interlayer for interfacial modification in the Dia/Cu composites. Microstructures and thermal properties of diamond/MXene/copper (Dia/MXene/Cu) composites are investigated. Morphology of fractured surface and relative density suggest that the MXene layer can improve the interface bonding in Dia/Cu composite. As results, the MXene layer at the Dia-Cu interface enhances the TC by 1.6-fold compared to the Dia/Cu composite without MXene modification. Besides, a sandwiched Dia/MXene/Cu model material is prepared to directly measure the interfacial thermal conductance (ITC) between diamond and Cu by a time-domain thermoreflectance (TDTR) technique. Quantitative results show that the ITC of Dia/MXene/Cu is 18.6 MW/m2 K and it increases to 24.7 MW/m2 K after annealing, which is lower than that of Dia/Cu (35 MW/m2 K) counterpart. Both the interface bonding and ITC affect the overall TC in bulk Dia/Cu composite, and the improved interface bonding dominates in the enhancement of TC of Dia/MXene/Cu composite. This work proposes a novel approach for interfacial modification in Dia/Cu composites and sheds insight into the MXene for various applications.

Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics

Ultra-wide bandgap semiconductors have attracted much interest over the last decade. These materials have strong chemical bonding that led to high temperature tolerance, high voltage and power handling capabilities as described by the Baliga figure of merit. Al-rich III-nitride materials are expected to have the best performance over the industry standard Si, and newer options such as SiC and GaN. Continuous improvements dictate the miniaturization of electronic devices, leading to increasingly higher power densities in smaller footprints, leading to heating that causes system failure. Thus, the thermal management is the limiting task for continuous performance scaling. In past we have reported on deep ultraviolet light emitting diodes (LEDs) and AlxGa1-xN (x>0.4) channel Heterojunction Field-Effect Transistors (HFETs) on 2-3 µm thick MOCVD grown high quality AlN/sapphire templates. For template thicknesses over 5 µm either sapphire or AlN patterning is needed to avoid stress related cracking. In this research, we for the first-time report on the direct MOCVD growth and characterization of crack-free, low-impurity AlN templates in excess of 16 μm on basal plane sapphire substrates without doing any external processing. Increasing the thickness improves thermal management and enables an easier sapphire substrate’s laser liftoff for increased DUV light extraction. It would also be used as a heat spreader in power electronics to minimize the operating temperature to maximize power output to industrial loads such as electric vehicles, and large turbines in manufacturing and transportation.All growths were carried out in custom MOCVD reactors with a fast-metalorganic switching manifold using a modified epitaxy procedure in which the Al- and N-precursors (Trimethyl Aluminum and NH3) are pulsed for increased surface mobility. At the initial pulsed growth stage, the growth-temperature and precursor-flow rates are adjusted to yield air-pocketed (voids) rough AlN layers. Most of these high defect materials are located near the AlN/sapphire interface. As the AlN thickness increases in the subsequent growths, the layers turned out smooth and the number of defects is significantly reduced due to dislocation bending/annihilation and cracking is avoided due to strain relief from the voids at the interface. All template growths were carried out at temperatures ~ 1200 - 1300 °C and 40 torr.From X-ray diffraction (XRD), Reciprocal space map (RSM), and Transmission Electron Microscopy (TEM) analysis of these thick AlN templates, we established that they were fully relaxed. Cross-section TEM data clearly shows the presence of voids at ~ 0.4 – 0.9 μm from the AlN/sapphire interface. There is a high density of dislocations present near the void region. Above this region, at least one order of magnitude lower dislocations is observed at the AlN smooth layer region. From the room-temperature Cathodoluminescence (CL) data we see an increase in the band edge emission and a decrease in the defect related long-wavelength signal with increasing AlN template thicknesses. The CL spectra were measured in the edge emission pump geometry on cleaved bars due to the transverse-magnetic polarized nature of the band-edge emission. The monochromatic CL imaging data also confirmed a highly defective region at the AlN/sapphire interface which is also the origin of the long wavelength (below bandgap) CL emission. The Atomic Force Microscopy (AFM) surface scans of the templates showed the surface roughness ~ 0.15 nm to 0.25 nm (for a 5 µm x 5 µm scan). The (102) off axis X-ray linewidths for all these samples ranged from 280 to 330 arc-secs. XRD and Raman experiments confirmed a residual compressive strain in AlN templates compared to the bulk sample. The measured stress ranges from -0.6 GPa to -1.2 GPa for all the templates, reasonable agreement with previous reports. We have found no obvious thickness dependence of the stresses measured from both XRD and Raman, an indication of preserving similar stresses in thick and thin templates.The thermal conductivity of our high-quality 16 µm thick template and the bulk AlN are measured at different temperatures by Time-domain Thermoreflectance (TDTR) technique. The thermal conductivity of the thick AlN at room temperature is 320 Wm-1K-1, or ~10% higher than that of the bulk AlN (~285 W/m-K). At low temperatures (120 K), it exceeds that of bulk AlN by more than 40%. In summary, these templates showed thermal conductivity as high or better than high-cost bulk AlN substrates, demonstrating for the first time that sapphire-based power electronics could be effectively managed thermally. Figure 1