THz Emission Research Articles

Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.

Shockwave-based THz emission in air.

THz emission in air under the irradiation of a pair of tightly-focused femtosecond laser pulses (800nm, 35fs) with nanosecond time delay and micro-meter spatial offsets is studied with polarization-sensitive THz time-domain spectroscopy and time-resolved imaging. The pre-pulse irradiation induces air-breakdown at its focus, which results in the expansion of shockwave front traveling outward. When the main pulse irradiates such shockwave front far from the pre-pulse focus with nanosecond delay, THz emission intensity was enhanced up to ∼13-times and its linear polarization was aligned along the line between the two focus positions of the pre- and the main pulses which is parallel to the expansion direction of the shockwave front. Asymmetric density profiles of the shockwave fronts prepared by the pre-pulse irradiation define the polarization of THz emission. Mechanisms are discussed from the viewpoint of electron diffusion in such asymmetric density profiles.

Noncollinear antiferromagnetic textures driven high-harmonic generation from magnetic dynamics in the absence of spin-orbit coupling

We demonstrate the generation of high order harmonics in carrier pumping from precessing ferromagnetic or antiferromagnetic orders, excited via magnetic resonance, in the presence of topological antiferromagnetic textures. This results in an enhancement of the carrier dynamics by orders of magnitude, enabling for an emission deep in the THz frequency range. Interestingly, the generation process occurs in an intrinsic manner, and is solely governed by the interplay between the s-d exchange coupling underlying the noncollinear antiferromagnetic order and the dynamical s-d exchange constant of the magnetic drive. Therefore, the relativistic spin–orbit interaction is not required for the emergence of high harmonics in the pumped currents. Accordingly, the noncollinear topological antiferromagnetic order is presented as an alternative to spin–orbit interaction for the purpose of harnessing high harmonic emission in carrier pumping. Furthermore, we demonstrate the emergence of high harmonics from random magnetic impurities. This suggests the universality of the magnetically induced high harmonic emission in the presence of real and/or momentum space noncollinear textures. Our proposal initiates a tantalizing prospect for the utilization of topological textures in the context of the highly active domains of ultrafast spintronics and THz emission.

Active control of metasurface via integrated spintronic terahertz emitter

Active metasurfaces have attracted increased attention due to their capabilities in function switching and wavefront shaping. Here we develop a new paradigm for active control of metasurfaces via integrating a tunable and programmable spintronic terahertz emitter (STE). While compatible with almost all conventional materials for metasurfaces, the STE can empower the passive metasurfaces to be active with increased flexibility. For the sake of illustration, a STE integrated metasurface quarter-wave plate is demonstrated, which enables broadband full polarization control over the entire Poincaré sphere. We also share a future perspective that the STE integrated metasurface can be readily programmed by using a commercial spatial light modulator. This work bridges the studies of metasurfaces and spintronic THz emitters, and may inspire more fruitful active metasurface designs and applications.

The importance of the interface for picosecond spin pumping in antiferromagnet-heavy metal heterostructures

Interfaces in heavy metal (HM) - antiferromagnetic insulator (AFI) heterostructures have recently become highly investigated and debated systems in the effort to create spintronic devices that function at terahertz frequencies. Such heterostructures have great technological potential because AFIs can generate sub-picosecond spin currents which the HMs can convert into charge signals. In this work we demonstrate an optically induced picosecond spin transfer at the interface between AFIs and Pt using time-domain THz emission spectroscopy. We select two antiferromagnets in the same family of fluoride cubic perovskites, KCoF3 and KNiF3, whose magnon frequencies at the centre of the Brillouin zone differ by an order of magnitude. By studying their behaviour with temperature, we correlate changes in the spin transfer efficiency across the interface to the opening of a gap in the magnon density of states below the Néel temperature. Our observations are reproduced in a model based on the spin exchange between the localized electrons in the antiferromagnet and the free electrons in Pt. Through this comparative study of selected materials, we are able to shine light on the microscopy of spin transfer at picosecond timescales between antiferromagnets and heavy metals and identify a key figure of merit for its efficiency: the magnon gap. Our results are important for progressing in the fundamental understanding of the highly discussed physics of the HM/AFI interfaces, which is the necessary cornerstone for the designing of femtosecond antiferromagnetic spintronics devices with optimized characteristics.

Single-frequency into dual-frequency absorption switch based on a one-dimensional photonic crystal containing graphene and vanadium dioxide layers

A terahertz absorber based on a one-dimensional photonic crystal (1DPC) containing VO2 and graphene sheet that connects single-frequency into dual-frequency absorption by temperature control is proposed in this paper. The structure consists of a graphene sheet on the Si layer, a Bragg reflector, and a VO2 layer at the end. At 300 K, the VO2 layer is in its insulator phase, and the structure behaves as a single-frequency absorber with 95% absorptivity at 0.472 THz (f1 mode). When temperature varies to 350 K, the VO2 transfer to the metallic phase and the proposed structure can be utilized as a dual-frequency absorber with 98% and 99% absorptivity at 0.472 THz and 0.523 THz (f2 mode), respectively. The physical reason for the absorption modes is explained by the electric field distribution and impedance-matching technique. The frequency position of the absorption modes, and their absorptivity can be tuned by adjusting the Fermi energy of graphene and the period numbers of 1DPC. Also, the first mode absorption shows high absorptivity over a wide incident angle range for TE and TM polarization at both temperatures; in contrast, the second mode absorption at 350 K vanishes over 25˚ of incidence angle. The proposed optical absorber would have potential applications in THz biosensors, filters, and emitters.

Spin-structured multilayer THz emitters by oblique incidence deposition

State-of-the-art THz spintronic emitters require a constant magnetic field to saturate their magnetization. We demonstrate that depositing the ferromagnetic layers at oblique incidence confines the magnetization to a chosen in-plane easy axis and maintains the saturation in the absence of an external magnetic field. We use this method to build THz emitters structured as spin valves, for which we use an external magnetic field to turn on and off the emission of THz radiation as well as to change its polarization. We are able to reproduce the THz waveforms by modeling the spin current and the THz propagation through the multilayer system.

Diamond Photoconductive Antenna for Terahertz Generation Equipped with Buried Graphite Electrodes

It has been shown recently that a photoconductive antenna (PCA) based on a nitrogen-doped diamond can be effectively excited by the second harmonic of a Ti:sapphire laser (λ = 400 nm). The THz emission performance of the PCA can be significantly increased if a much stronger electric field is created between the close-located electrodes. To produce a homogeneous electric field over the entire excited diamond volume, the laser fabrication of deep-buried graphite electrodes inside the diamond crystal was proposed. Several electrodes consisting of the arrays of buried pillars connected by the surface graphite stripes were produced inside an HPHT diamond crystal using femtosecond and nanosecond laser pulses. Combining different pairs of the electrodes, a series of PCAs with various electrode interspaces was formed. The THz emission of the PCAs equipped with the buried electrodes was measured at different values of excitation fluence and bias voltage (DC and pulsed) and compared with the emission of the same diamond crystal when the bias voltage was applied to the surface electrodes on the opposite faces. All examined PCAs have demonstrated the square-law dependencies of the THz fluence on the field strength, while the saturation fluence fluctuated in the range of 1200–1600 µJ/cm2. The THz emission performance was found to be approximately the same for the PCAs with the surface electrodes and with the buried electrodes spaced at a distance of 1.4–3.5 mm. However, it noticeably decreased when the distance between the buried electrodes was reduced to 0.5 mm.

THz generation in GaSe crystals pumped with laser photon energy below and around the bandgap

We study optical rectification in GaSe by performing THz generation with femtosecond laser pulses whose wavelength is tuned from below to above the GaSe bandgap. As expected from a theory, we observed a first THz emission peak at 1.77 eV, where phase matching is realized. A second THz emission peak was recorded, when the pump photon energy reaches the crystal bandgap (2.205 eV). This can be attributed to a resonance of the GaSe nonlinearity. In crystals thinner than the coherence length, the bandgap peak is stronger than the phase-matched one.

Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes

Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz. Keywords: Resonant tunneling diodes, active microstrip transmission lines, distributed emitters, diodes with double metal contacts.

Активная копланарная линия передач на основе двухбарьерных GaAs/AlAs резонансно-туннельных диодов

Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz.

Coherent THz wave emission from HgTe quantum dots

Mercury telluride (HgTe) nanocrystals (NCs) are very promising for THz technology as they exhibit broad THz absorption resonances and a carrier lifetime of a few picoseconds as well as being easily fabricated using solution synthesis. In this work, we show their light emission properties in the THz spectral range, up until now unexplored, and show how THz pulse generation can be used for microscopic insights into these NCs. In particular, we report on coherent THz emission from large HgTe NCs excited by linearly polarized optical pulses via second-order nonlinear effects. The peak emission frequency is tunable from 0.4 to 0.8 THz by varying incident angles of optical pulses from 0° to 45°. Our results reveal that the THz emission is induced by transient photocurrents arising from both photogalvanic and photon drag effects. By pushing the light emission of colloidal quantum dots down to the THz spectral range, our study expands the application fields of NCs, especially toward the development of easily integrable and tunable THz emitters and quantum THz devices.

Interaction of spatial-Gaussian lasers with the magnetized CNTs in the presence of DC electric field and enhanced THz emission

The interaction of spatial-Gaussian lasers with magnetized carbon nanotubes (CNTs) in the presence of a DC electric field is shown to broaden the surface plasmon resonance effectively. The prime feature of the interaction of lasers with magnetized CNTs is that when the electron cylinder of CNT is shifted with respect to the ion cylinder, the space charge electric field is developed in the overlapped region and results in the restoration force of the electrons. The restoration force along with the ponderomotive and magnetic forces assist to increase the nonlinear current which is further enhanced by the drift velocity acquired by the electrons of CNTs due to the applied static electric field. This action is also responsible for the enhanced THz yield at surface plasmon resonance condition where is the polarization coefficient, is the relative permittivity of the dielectric substrate, is the cyclotron frequency of CNT electrons and is the plasma frequency. The study reveals that THz generation from the magnetized CNTs may be a promising source for the detection of dangerous chemicals like royal demolition explosive (RDX), pentaerythritol tetra-nitrate (PETN), trinitrotoluene (TNT), etc.

Unidirectional spintronic terahertz emitters with high efficiency.

Due to the high performance and low cost, spintronic terahertz emitters (STEs) have been a hot topic in the field of terahertz sources. However, most of the research focuses on the THz generation process and little attention has been paid to the control and modulation of the THz wave generated by the STE. In this Letter, a unidirectional spintronic terahertz emitter (USTE) integrating a common STE with a metal grating is proposed to manipulate the THz emission process. The dyadic Green's function method and finite element method are adopted to survey the characteristics of the USTE. Simulations show that the metal grating not only has a transmission larger than 97% in the optical band, but also has a higher reflectivity larger than 99% in the THz band. As a result, the USTE has a unidirectional THz emission along the direction of the pump beam with a larger than 4-fold enhancement in intensity. Moreover, the USTE has the capability of tuning the central frequency and THz wave steering by adjusting the distance and angle between the STE and the metal grating. We believe that this USTE can be used in THz wireless communications and holographic imaging, especially in the field of THz bio-sensing, which needs some resonance frequencies to sense.

THz Radiation Efficiency Enhancement from Metal-ITO Nonlinear Metasurfaces.

Strong single-cycle THz emission has been demonstrated from nonlinear plasmonic metasurfaces, when excited by femtosecond laser pulses. In order to invoke a higher nonlinear response, such metasurfaces have been coupled to thin indium-tin-oxide (ITO) films, which exhibit an epsilon-near zero (ENZ) behavior in the excitation wavelength range and enhance the nonlinear conversion. However, the THz conductivity of the ITO film also reduces the radiation efficiency of the meta-atoms constituting the metasurface. To overcome this, we etch the ITO layer around the plasmonic meta-atoms, which allows harnessing of the enhanced localized fields due to the ENZ behavior of the remaining ITO film, while improving the THz radiation efficiency. We report an increase of more than 1 order of magnitude in the emitted THz spectral power density, while the energy conversion efficiency approaches 10-6. This simple yet very effective fabrication scheme provides important progress toward increasing the range of applications of nonlinear plasmonic metasurface THz emitters.

Two-photon pumped exciton-polariton condensation

Two-photon absorption (TPA) allows accessing “dark” states of matter that are otherwise inaccessible to light, which serve as important building blocks for quantum information processing. In a semiconductor microcavity, TPA-driven condensation of strongly coupled light-matter exciton–polaritons can enable new solid-state quantum simulations of “dark” state-condensate interactions and was predicted to stimulate THz emission. Here, we report the first observation of two-photon-pumped polariton condensation, demonstrated by angle-resolved photoluminescence in a GaAs-based microcavity. TPA is evidenced in the quadratic emission dependence on pump power below and above the condensation threshold, and second-harmonic generation is ruled out by both this threshold behavior and by the emission peak energy showing no dependence on pump photon energy. Our results pave the way toward novel polariton-based sources and solid-state coherent control of collective quantum states with individual two-level systems.

Compressive and tensile strain effects on the ultrafast carrier dynamics and transport of gallium arsenide thin films on silicon and magnesium oxide substrates

We investigate strain effects on the ultrafast carrier dynamics and transport of gallium arsenide films on silicon (GaAs/Si) and magnesium oxide (GaAs/MgO) substrates using temperature-dependent photoluminescence (PL) and terahertz time-domain spectroscopy (THz-TDS) from 11 K - 300 K. The PL shows that GaAs/Si and GaAs/MgO samples are under tensile and compressive strain at low temperature, respectively. The temperature-dependent THz emission from GaAs/Si does not show significant differences with the emission from bulk GaAs, while the THz emission from GaAs/MgO shows an order-of-magnitude decrease at low temperature. The THz emission from the samples exhibits an interplay between strain-induced effective mass changes and temperature-dependent electric field effects.

Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy

Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers.

Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses

We present comprehensive studies on the emission of broadband, free-space THz transients from several highly resistive GaAs samples excited by femtosecond optical pulses. Our test samples are characterized by different degrees of disorder, ranging from nitrogen-implanted to semi-insulating and annealed semi-insulating GaAs crystals. In our samples, we clearly observed transient THz emissions due to the optical rectification effect, as well as due to the presence of the surface depletion electrical field. Next, we arranged our experimental setup in such way that we could observe directly how the amplitude of surface-emitted THz optical pulses is affected by an applied, in-plane magnetic field. We ascribe this effect to the Lorentz force that additionally accelerates optically excited carriers. The magnetic-field factor η is a linear function of the applied magnetic field and is the largest for an annealed GaAs sample, while it is the lowest for an N-implanted GaAs annealed at the lowest (300 °C) temperature. The latter is directly related to the longest and shortest trapping times, respectively, measured using a femtosecond optical pump-probe spectroscopy technique. The linear dependence of the factor η on the trapping time enabled us to establish that, for all samples, regardless of their crystalline structure, the electron effective mass was equal to 0.059 of the electron mass m0, i.e., it was only about 6% smaller than the generally accepted 0.063m0 value for GaAs with a perfect crystalline structure.

Multi-pixel photoconductive emitters for the controllable generation of azimuthal and radial terahertz beams.

A multi-pixel photoconductive emitter is reported that generates THz beams with either azimuthal, radial or linear polarization states. Switching between the different polarization states was purely electrical, via the bias voltage applied, circumventing the need for mechanical polarization optics or different THz emitters to change the polarization. Dipole array modelling was performed to validate emitter array designs, and to explore their optimal bias configuration, while spatially-resolved electro-optic detection of the generated beams confirmed that cylindrical-vector beams were produced. We further demonstrate that the spatial beam profile was optimized by adjusting the bias level on particular pixels, improving the polarization purity of the beam.